Fairchild FDMA7630 Single n-channel powertrenchâ® mosfet 30 v, 11 a, 13 mî© Datasheet

FDMA7630
Single N-Channel PowerTrench® MOSFET
30 V, 11 A, 13 mΩ
Features
General Description
„ Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 11 A
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low rDS(on) and gate charge provide excellent switching
performance.
„ Max rDS(on) = 20 mΩ at VGS = 4.5 V, ID = 9 A
„ Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ Free from halogenated compounds and antimony oxides
Application
„ RoHS compliant
Pin 1
„ DC – DC Buck Converters
D
D
G
Drain
Bottom Drain Contact
D
D
D
D
G
S
Source
S
D
D
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
Drain Current -Continuous
ID
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
30
Units
V
±20
V
11
24
Power Dissipation
TA = 25 °C
(Note 1a)
2.4
Power Dissipation
TA = 25 °C
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
–55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
52
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
145
°C/W
Package Marking and Ordering Information
Device Marking
630
Device
FDMA7630
©2012 Fairchild Semiconductor Corporation
FDMA7630 Rev.C3
Package
MicroFET 2x2
1
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMA7630 Single N-Channel Power Trench® MOSFET
July 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = 20 V, VDS = 0 V
100
nA
3.0
V
30
V
15
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
–6
VGS = 10 V, ID = 11 A
10
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 9 A
14
20
VGS = 10 V, ID = 11 A, TJ = 125 °C
14
18
VDS = 5 V, ID = 11 A
36
gFS
Forward Transconductance
1.0
2.0
mV/°C
13
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V
f = 1.0 MHz
1020
1360
pF
315
415
pF
35
55
pF
Ω
1.7
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V
Qg
Total Gate Charge
VGS = 0 V to 4.5 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 11 A
VGS = 10 V, RGEN = 6 Ω
VDD = 15 V,
ID = 11 A
8
15
ns
3
10
ns
19
34
ns
3
10
ns
16
22
nC
8
10
nC
3.0
nC
2.2
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A
IF = 11 A, di/dt = 100 A/μs
2
(Note 2)
A
0.8
1.2
V
21
33
ns
6
12
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
©2012 Fairchild Semiconductor Corporation
FDMA7630 Rev.C3
2
www.fairchildsemi.com
FDMA7630 Single N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
24
3.0
ID, DRAIN CURRENT (A)
20
16
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
12
8
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
0.5
1.0
1.5
2.0
VGS = 4 V
VGS = 4.5 V
1.5
1.0
VGS = 6 V VGS = 10 V
0.5
2.0
0
4
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
24
60
ID = 11 A
VGS = 10 V
ID = 11 A
40
30
10
TJ = 25 oC
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
125 oC
12
TJ = 25 oC
TJ = -55 oC
4
1.5
2.0
2.5
3.0
3.5
4.0
4.5
8
10
VGS = 0 V
10
TJ = 125 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
5.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMA7630 Rev.C3
6
24
VDS = 5 V
0
1.0
4
Figure 4. On-Resistance vs Gate to
Source Voltage
16
8
2
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ =
TJ = 125 oC
20
0
-50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
50
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
16
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
20
12
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
24
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
2.5
3
www.fairchildsemi.com
FDMA7630 Single N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
VGS, GATE TO SOURCE VOLTAGE (V)
10
ID = 11 A
1000
CAPACITANCE (pF)
8
VDD = 10 V
6
VDD = 15 V
4
VDD = 20 V
Ciss
Coss
100
2
f = 1 MHz
VGS = 0 V
0
0
5
10
15
10
0.1
20
1
Qg, GATE CHARGE (nC)
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 7. Gate Charge Characteristics
50
1000
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
Crss
10
1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
0.1
1s
RθJA = 145 oC/W
DERIVED FROM
TEST DATA
TA = 25 oC
0.01
0.01
10 s
DC
0.1
1
10
100
SINGLE PULSE
RθJA = 145 oC/W
VGS = 10 V
TA = 25 oC
100
10
1
0.1
-4
10
-3
10
VDS, DRAIN to SOURCE VOLTAGE (V)
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 145 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMA7630 Rev.C3
4
www.fairchildsemi.com
FDMA7630 Single N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2.000
0.10 C
1.00
6
2X
4
1.35
0.66
2.30
1.05
2.000
NO DRAIN OR GATE
TRACES ALLOWED IN
THIS AREA
(0.47)
0.10 C
PIN#1 LOCATION
1
2X
3
0.40 TYP
0.65 TYP
RECOMMENDED LAND PATTERN OPT 1
0.8 MAX
0.10 C
(0.20)
0.08 C
0.05
0.00
C
SEATING
PLANE
1.00
6
(0.30)
PIN #1 IDENT
4
1.000
0.800
1
0.33
0.20
3
1.35
0.66 2.30
1.05
(0.56)
1.05
0.95
(0.47)
1
6
0.65 TYP
4
0.65
0.25~0.35
1.30
0.10
0.05
3
0.40 TYP
RECOMMENDED LAND PATTERN OPT 2
C A B
C
A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION
MO-229 DATED AUG/2003
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. DRAWING FILENAME: MKT-MLP06Lrev2.
©2012 Fairchild Semiconductor Corporation
FDMA7630 Rev.C3
5
www.fairchildsemi.com
FDMA7630 Single N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMA7630 Rev.C3
6
www.fairchildsemi.com
FDMA7630 Single N-Channel Power Trench® MOSFET
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