Fairchild FDMC8854 N-channel power trench mosfet 30v, 15a, 5.7mohm Datasheet

FDMC8854
N-Channel Power Trench® MOSFET
30V, 15A, 5.7mΩ
Features
tm
General Description
„ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s
advanced
Power
Trench
process. It has been optimized for power management
applications.
„ Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A
„ Low Profile - 1mm max in Power 33
„ RoHS Compliant
Application
„ DC - DC Conversion
Bottom
5
6
7
Top
8
D
4
2
3
D
D
D
1
5
4
6
3
7
2
8
1
G
S
S
S
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
TJ, TSTG
Units
V
±20
V
15
67
(Note 1a)
-Pulsed
PD
Ratings
30
15
A
30
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
41
(Note 1a)
Operating and Storage Junction Temperature Range
2.0
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
3
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
60
°C/W
Package Marking and Ordering Information
Device Marking
FDMC8854
Device
FDMC8854
©2007 Fairchild Semiconductor Corporation
FDMC8854 Rev.C
Package
Power 33
1
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
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FDMC8854 N-Channel PowerTrench® MOSFET
February 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VGS = 0V
±100
nA
3
V
21
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1
1.9
-6
mV/°C
VGS = 10V, ID = 15A
4.4
5.7
VGS = 4.5V, ID = 13A
5.6
7.6
VGS = 10V, ID = 15A, TJ = 125°C
6.6
9.0
VDS = 5V, ID = 15A
60
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 10V, VGS = 0V,
f = 1MHz
f = 1MHz
2560
3405
pF
515
685
pF
290
435
pF
Ω
1.3
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
5
10
ns
Qg(TOT)
Total Gate Charge
41
57
nC
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 10V, ID = 15A
VGS = 10V, RGEN = 6Ω
VDD =10V, ID = 15A,
VGS = 10V
13
23
5
10
ns
ns
31
50
ns
7
nC
7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 15A
(Note 2)
IF = 15A, di/dt = 100A/µs
0.8
1.3
V
33
50
ns
28
42
nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMC8854 Rev.C
2
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FDMC8854 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
180
VGS = 10.0V
150
VGS =4.5V
120
VGS = 4.0V
90
VGS = 3.5V
60
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
5
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.5
VGS = 3.5V
2.0
VGS = 4V
1.0
VGS = 10.0V
0.5
0
30
Figure 1. On-Region Characteristics
90
120
150
180
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
15
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
1.6
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID =15A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-75
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
12
ID =15A
9
TJ = 125oC
6
TJ = 25oC
3
2
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
100
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT (A)
VGS = 4.5V
1.5
80
60
40
TJ = 150oC
TJ = 25oC
20
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
FDMC8854 Rev.C
VGS = 0V
10
1
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
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FDMC8854 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC8854 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
4000
ID = 15A
8
Ciss
VDD = 5V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 10V
6
VDD =15V
4
2
1000
Coss
Crss
f = 1MHz
VGS = 0V
100
0.1
0
0
10
20
30
Qg, GATE CHARGE(nC)
40
50
Figure 7. Gate Charge Characteristics
80
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
30
Figure 8. Capacitance vs Drain
to Source Voltage
20
10
TJ
= 25oC
TJ = 125oC
60
VGS = 10V
40
Package limited
VGS = 4.5V
20
o
RθJC = 3 C/W
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE(ms)
0
1000
25
P(PK), PEAK TRANSIENT POWER (W)
1ms
10ms
0.01
0.01
100ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
TA = 25oC
0.1
1
1s
DC
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
125
150
200
VGS = 10V
100
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
10
150 – T A
----------------------125
1
SINGLE PULSE
0.5 -3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe
Operating Area
FDMC8854 Rev.C
100
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10
0.1
75
o
100
1 R
DS(ON) LIMITED
50
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
4
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2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
0.01
0.004
-3
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDMC8854 Rev.C
5
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FDMC8854 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC8854 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com
6
FDMC8854 Rev.C
FDMC8854 N-Channel PowerTrench® MOSFET
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDMC8854 Rev.C
7
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