FDMS8662 tm ® N-Channel PowerTrench MOSFET 30V, 49A, 2.0mΩ Features General Description Max rDS(on) = 2.0mΩ at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 24A Advanced Package and Silicon combination for low rDS(on) and high efficiency Applications MSL1 robust package design Low Side for Synchronous Buck to Power Core Processor RoHS Compliant Secondary Side Synchronous Rectifier Low Side Switch in POL DC/DC Converter Oring FET/ Load Switch Pin 1 S D D D S S G D G D 5 4 D 6 3 S D 7 2 S D 8 1 S Power 56 (Bottom View) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 49 159 (Note 1a) -Pulsed 28 A 200 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 726 83 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.5 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8662 Device FDMS8662 ©2007 Fairchild Semiconductor Corporation FDMS8662 Rev.C1 Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000units www.fairchildsemi.com FDMS8662 N-Channel PowerTrench® MOSFET November 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.0 V 18 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -7 VGS = 10V, ID = 28A 1.6 2.0 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 24A 2.2 3.0 VGS = 10V, ID = 28A, TJ = 125°C 2.2 3.0 VDD = 10V, ID = 28A 207 gFS Forward Transconductance 1.0 1.7 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 4825 6420 pF 2365 3145 pF 290 435 pF Ω 1.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 4.5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 28A, VGS = 10V, RGEN = 6Ω VDD = 15V, ID = 28A 17 31 ns 10 20 ns 45 72 ns 7 14 ns 71 100 nC 33 47 nC 13 nC 9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.1A (Note 3) VGS = 0V, IS = 28A IF = 28A, di/dt = 100A/µs 0.7 1.2 0.8 1.2 V V 55 88 ns 42 68 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad of 2 oz copper. 2. Starting TJ = 25°C, L = 3mH, IAS = 22A, VDD = 30V, VGS = 10V. 3. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDMS8662 Rev.C1 2 www.fairchildsemi.com FDMS8662 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 2.5 200 ID, DRAIN CURRENT (A) 160 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 4.5V VGS = 4.0V VGS = 3.5V 120 80 VGS = 3.0V 40 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 4.0V 1.5 VGS = 4.5V 1.0 VGS = 10V 0 40 80 120 160 200 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 5 1.8 ID = 28A VGS = 10V ID = 28A rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 1.6 3 TJ = 125oC 2 TJ = 25oC 1 -50 -25 0 25 50 75 100 125 150 2 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VDS = 5V 105 TJ = 150oC 70 TJ 0 1.0 = 25oC TJ = -55oC 1.5 2.0 2.5 3.0 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 175 35 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 140 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 4 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0.5 4.0 Figure 1. On-Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 3.5V 200 100 VGS = 0V 10 1 0.1 TJ = -55oC 0.01 0.001 0.0 3.5 TJ = 25oC TJ = 150oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2007 Fairchild Semiconductor Corporation FDMS8662 Rev.C1 3 1.2 www.fairchildsemi.com FDMS8662 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10000 ID = 28A 8 Ciss VDD = 10V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V VDD = 20V 4 Coss 1000 2 Crss f = 1MHz VGS = 0V 0 0 15 30 45 60 100 0.1 75 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 180 40 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 160 10 TJ = 25oC TJ = 125oC 140 120 VGS = 10V 100 80 Limited by Package 60 40 20 1 0.01 0.1 1 10 100 o RθJC = 1.5 C/W 0 25 1000 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 300 P(PK), PEAK TRANSIENT POWER (W) 1ms 100 ID, DRAIN CURRENT (A) 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) 10ms 10 1 VGS = 4.5V 100ms THIS AREA IS LIMITED BY rDS(on) 0.1 1s SINGLE PULSE TJ = MAX RATED 10s RθJA = 125oC/W DC TA = 25oC 0.01 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 125oC/W TA = 25oC 100 10 1 0.5 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2007 Fairchild Semiconductor Corporation FDMS8662 Rev.C1 VGS = 10V 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8662 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.001 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.0001 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDMS8662 Rev.C1 5 www.fairchildsemi.com FDMS8662 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMS8662 N-Channel PowerTrench® MOSFET ©2007 Fairchild Semiconductor Corporation FDMS8662 Rev.C1 6 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition tm Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 ©2007 Fairchild Semiconductor Corporation FDMS8662 Rev.C1 www.fairchildsemi.com FDMS8662 N-Channel PowerTrench® MOSFET TRADEMARKS