Fairchild FDMS8670AS N-channel powertrenchâ® syncfetâ ¢ Datasheet

FDMS8670AS
®
N-Channel PowerTrench SyncFET
tm
TM
30V, 42A, 3.0mΩ
Features
General Description
„ Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A
The FDMS8670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
„ Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A
„ Advanced Package and Silicon combination
for low rDS(on) and high efficiency
„ SyncFET Schottky Body Diode
Applications
„ MSL1 robust package design
„ Synchronous Rectifier for DC/DC Converters
„ RoHS Compliant
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Pin 1
S
D
D
D
S
S
G
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
Power 56 (Bottom view)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
TJ, TSTG
±20
V
127
(Note 1a)
-Pulsed
PD
Units
V
42
23
A
200
Single Pulse Avalanche Energy
EAS
Ratings
30
384
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
50
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.6
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8670AS
Device
FDMS8670AS
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
Package
Power 56
1
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
www.fairchildsemi.com
FDMS8670AS N-Channel PowerTrench® SyncFETTM
October 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1mA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 10mA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
500
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
3.0
V
28
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1mA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 10mA, referenced to 25°C
-5
VGS = 10V, ID = 23A
2.4
3.0
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5V, ID = 18A
3.5
4.7
VGS = 10V, ID = 23A, TJ = 125°C
3.5
4.7
VDD = 10V, ID = 23A
143
gFS
Forward Transconductance
1.0
1.7
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
2718
3615
pF
1537
2045
pF
343
515
pF
Ω
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 4.5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15V, ID = 23A,
VGS = 10V, RGEN = 6Ω
VDD = 15V,
ID = 23A
14
26
ns
5
10
ns
32
52
ns
4
10
ns
39
55
nC
20
28
nC
7.2
nC
4.0
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS =2A
(Note 3)
IF = 23A, di/dt = 300A/µs
0.4
0.7
V
39
63
ns
48
77
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
2. Starting TJ = 25°C, L = 3mH, IAS = 16A, VDD = 30V, VGS =10V.
3. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
2
www.fairchildsemi.com
FDMS8670AS N-Channel PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
200
VGS = 4.5V
160
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10V
VGS = 4V
120
VGS = 3.5V
80
VGS = 3V
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.5
VGS = 3V
3.0
VGS = 3.5V
2.5
VGS = 4V
2.0
VGS = 4.5V
1.5
VGS = 10V
1.0
0.5
4
0
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
160
200
14
ID = 23A
VGS = 10V
1.6
10
ID = 23A
8
6
TJ = 125oC
4
2
TJ = 25oC
0
-50
-25
0
25
50
75
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
12
100 125 150
2
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VDS = 5V
105
70
TJ = 125oC
35
TJ = 25oC
1
2
TJ = -55oC
3
6
8
10
Figure 4. On-Resistance vs Gate to
Source Voltage
175
140
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
120
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
0
80
ID, DRAIN CURRENT(A)
100
VGS = 0V
10
TJ = 125oC
TJ = 25oC
1
0.1
TJ = -55oC
0.01
0.001
0.0
4
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
3
1.2
www.fairchildsemi.com
FDMS8670AS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted
5000
ID = 23A
8
Ciss
VDD = 10V
6
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 15V
VDD = 20V
4
1000
Coss
Crss
2
f = 1MHz
VGS = 0V
100
0.1
0
0
10
20
30
40
1
Figure 7. Gate Charge Characteristics
140
120
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
30
Figure 8. Capacitance vs Drain
to Source Voltage
40
10
TJ = 25oC
TJ = 125oC
100
VGS = 10V
80
Limited by Package
60
VGS = 4.5V
40
20
o
1
0.01
RθJC = 1.6 C/W
0.1
1
10
100
0
25
600
50
tAV, TIME IN AVALANCHE(ms)
P(PK), PEAK TRANSIENT POWER (W)
1ms
10ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
100ms
SINGLE PULSE
TJ = MAX RATED
1s
10s
RθJA = 125oC/W
DC
o
TA = 25 C
0.01
0.01
0.1
1
10
100
150
2000
1000
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100µs
10
100
o
300
100
75
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS8670AS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
0.0005
-4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
5
www.fairchildsemi.com
FDMS8670AS N-Channel PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
CURRENT: 0.8A/Div
IDSS, REVERSE LEAKAGE CURRENT (A)
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8670AS.
TIME: 25nS/Div
0.01
TJ = 125oC
0.001
TJ = 100oC
0.0001
1E-5
TJ = 25oC
1E-6
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 15. SyncFET Body Diode Reverse Leakage
vs Drain to Source Voltage
Figure 14. FDMS8670AS SyncFET Body Diode
Reverse Recovery Characteristics
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
6
www.fairchildsemi.com
FDMS8670AS N-Channel PowerTrench® SyncFETTM
Typical Characteristics (continued)
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when properly used in accordance with instructions for use
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Definition of Terms
Datasheet Identification
Product Status
Definition
tm
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
©2007 Fairchild Semiconductor Corporation
FDMS8670AS Rev.B
www.fairchildsemi.com
FDMS8670AS N-Channel PowerTrench® SyncFETTM
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