SMD Type Product specification FDN359AN General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. SuperSOTTM -8 SuperSOTTM -6 SOT-23 2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SO-8 SOIC-16 SOT-223 D D 9A 35 S TM SuperSOT -3 G Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage TA = 25oC unless other wise noted VGSS Gate-Source Voltage ID Maximum Drain Current - Continuous (Note 1a) - Pulsed PD TJ,TSTG S G Maximum Power Dissipation Ratings Units 30 V ±20 V 2.7 A 15 (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Temperature Range W -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W http://www.twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification FDN359AN Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC V IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V,VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA 3 V TJ = 55°C ON CHARACTERISTICS VGS(th) mV/ oC 23 1 µA 10 µA (Note) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.7 A o 1.6 mV/ oC -4 TJ =125°C VGS = 4.5 V, ID = 2.4 A 0.037 0.046 0.055 0.075 0.049 0.06 15 Ω ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 2.7 A 9.5 A S VDS = 10 V, VGS = 0 V, f = 1.0 MHz 480 pF 120 pF 45 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 5 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDS = 10 V, ID = 2.7 A, VGS = 5 V 6 12 ns 13 24 ns 15 27 ns 4 10 ns 5 7 nC 1.4 nC 1.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note) 0.65 0.42 A 1.2 V Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Typical RθJA using the board layouts shown below on FR-4 PCB in a still air environment : a. 250oC/W when mounted on a 0.02 in2 pad of 2oz Cu. b. 270oC/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. http://www.twtysemi.com 4008-318-123 2 of 2