SMD Type Product specification FDN361BN General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 1.8 A, 30 V. RDS(ON) = 110 mΩ @ VGS = 10 V RDS(ON) = 160 mΩ @ VGS = 4.5 V • Low gate charge These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. • Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities • High performance trench technology for extremely low RDS(ON) D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current 1.4 A – Continuous (Note 1a) – Pulsed 10 Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) 0.5 (Note 1b) 0.46 W –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 361B FDN361BN 7’’ 8mm 3000 units http://www.twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification FDN361BN Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 μA ID = 250 μA,Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, 30 V 26 VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C IGSS Gate–Body Leakage On Characteristics VGS = ±20 V, VDS = 0 V ID = 250 μA mV/°C 1 μA 10 μA ±100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, RDS(on) Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, ID = 1.4 A ID = 1.2 A VGS = 4.5 V, VGS = 10 V, ID = 1.4 A, TJ = 125°C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 1.4 A 4 VDS = 15 V, f = 1.0 MHz V GS = 0 V, 145 193 pF 35 47 pF 15 23 pF VGS = 15 mV, f = 1.0 MHz 1.6 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 3 6 ns 8 16 ns 16 29 ns 1 2.1 3 V 92 120 114 110 160 150 mΩ 3.5 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge Ω (Note 2) VDS = 15 V, VGS = 4.5 V ID = 1.4 A, 2 4 ns 1.3 1.8 nC 0.5 nC 0.5 nC Drain–Source Diode Characteristics VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time VGS = 0 V, IF = 1.4 A, IS = 0.42 A (Note 2) diF/dt = 100 A/µs 0.8 1.2 11 22 4 Diode Reverse Recovery Charge V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% http://www.twtysemi.com 4008-318-123 1 of 2