SMD Type Product specification FDN372S General Description Features The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter. • 2.6 A, 30 V. RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • DC-DC Converter • Motor Drives D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed TJ, TSTG Units 30 V ± 16 V 2.6 A 10 Power Dissipation for Single Operation PD Ratings (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W °C –55 to +150 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 250 °C/W (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 372 FDN372S 7’’ 8mm 3000 units http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification FDN372S Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±16 V, VDS = 0 V ±100 nA 3 V On Characteristics ID = 1 mA 30 V 24 ID = 10 mA, Referenced to 25°C mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 10 mA, Referenced to 25°C ID = 1 mA ID(on) On–State Drain Current VGS = 10 V, ID = 2.6 A ID = 2.3 A VGS = 4.5 V, VGS = 10V, ID = 2.6 A, TJ = 125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10V, ID = 2.6 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 1.4 –3.2 32 36 45 mV/°C 40 50 60 10 mΩ A 15 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge V GS = 15 mV f = 1.0 MHz 630 pF 115 pF 45 pF 2.4 Ω (Note 2) VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 15 V, VGS = 5 V ID = 2.6 A, 7 14 ns 5 10 ns 21 34 ns 2.7 5.4 ns 5.8 8.1 nC 1.3 1.9 nC 1.2 1.7 nC 0.7 A 440 700 mV Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 0.7 A IF = 2.6 A, diF/dt = 300 A/µs (Note 2) (Note 2) 10 ns 4 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com [email protected] 4008-318-123 2 of 2