TYSEMI FDN8601N

SMD Type
Product specification
FDN8601
100 V, 2.7 A, 109 m:
Features
General Description
„ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
„ Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Applications
„ Primary DC-DC Switch
„ Fast switching speed
„ Load Switch
„ 100% UIL tested
„ RoHS Compliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
-Continuous
ID
(Note 1a)
-Pulsed
PD
TJ, TSTG
Units
V
±20
V
2.7
12
Single Pulse Avalanche Energy
EAS
Ratings
100
(Note 3)
13
Power Dissipation
(Note 1a)
1.5
Power Dissipation
(Note 1b)
0.6
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
(Note 1)
75
(Note 1a)
80
°C/W
Package Marking and Ordering Information
Device Marking
8601
http://www.twtysemi.com
Device
FDN8601
Package
SSOT-3
Reel Size
7 ’’
Tape Width
8 mm
4008-318-123
Quantity
3000 units
1of 2
SMD Type
Product specification
FDN8601
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 PA, VGS = 0 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.0
V
100
V
68
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 PA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
2.0
3.0
-8
mV/°C
VGS = 10 V, ID = 1.5 A
85.4
109
VGS = 6 V, ID = 1.2 A
117
175
VGS = 10 V, ID = 1.5 A, TJ = 125 °C
143
183
VDS = 10 V, ID = 1.5 A
8
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
156
210
pF
47
65
pF
2.7
5
pF
:
1.0
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V
Qg
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 1.5 A,
VGS = 10 V, RGEN = 6 :
VDD = 50 V,
ID = 1.5 A
4.3
10
ns
1.3
10
ns
7.8
16
ns
3.4
10
ns
3
5
nC
1.8
3
nC
0.9
nC
0.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.5 A
(Note 2)
IF = 1.5 A, di/dt = 100 A/Ps
0.81
1.3
V
29
46
ns
15
27
nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 80 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 180 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.
http://www.twtysemi.com
4008-318-123
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