FDP047N08 N-Channel PowerTrench® tm MOSFET 75V, 164A, 4.7mΩ Features Description • RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been espe- • Fast switching speed cially tailored to minimize the on-state resistance and yet • Low gate charge maintain superior switching performance. • High performance trench technology for extremely low RDS(on) Application • High power and current handling capability • DC to DC convertors / Synchronous Rectification • RoHS compliant D G G DS TO-220 FDP Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Units V ±20 V -Continuous (TC = 25oC) 164* A 116* A ID Drain Current -Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 1) 656 A (Note 2) 670 mJ 3.0 V/ns (Note 3) (TC = 25oC) 268 W - Derate above 25oC 1.79 W/oC -55 to +175 oC 300 oC Ratings Units PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 75 *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 0.56 RθCS Thermal Resistance, Case to Sink Typ. 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2008 Fairchild Semiconductor Corporation FDP047N08 Rev. A 1 oC/W www.fairchildsemi.com FDP047N08 N-Channel PowerTrench® MOSFET March 2008 Device Marking FDP047N08 Device FDP047N08 Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TC = 25oC 75 - - V ID = 250µA, Referenced to 25oC - 0.02 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 75V, VGS = 0V - - 1 VDS = 75V, TC = 150oC - - 500 µA IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 3.5 4.5 V - 3.7 4.7 mΩ - 150 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 80A gFS Forward Transconductance VDS = 10V, ID = 80A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz - 7080 9415 pF - 870 1155 pF - 410 615 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 37.5V, ID = 80A RGEN = 25Ω, VGS = 10V (Note 4, 5) VDS = 60V, ID = 80A VGS = 10V (Note 4, 5) - 100 210 ns - 147 304 ns - 220 450 ns - 114 238 ns - 117 152 nC - 37 - nC - 32 - nC Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 164 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 656 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 80A - - 1.25 V trr Reverse Recovery Time - 45 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 80A dIF/dt = 100A/µs - 66 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.21mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP047N08 Rev. A 2 www.fairchildsemi.com FDP047N08 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V *Notes: 1. VDS = 20V 2. 250µs Pulse Test ID,Drain Current[A] 100 ID,Drain Current[A] Figure 2. Transfer Characteristics 500 500 10 100 o 175 C o 25 C 10 o -55 C *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 1 0.002 1 3 0.01 0.1 1 VDS,Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] 500 0.005 VGS = 10V 0.004 VGS = 20V 0.003 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.002 0 100 200 300 ID, Drain Current [A] 1 0.2 400 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 8000 Coss 4000 *Note: 1. VGS = 0V 2. f = 1MHz Crss FDP047N08 Rev. A 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics Ciss 0 0.1 2. 250µs Pulse Test 10 12000 Capacitances [pF] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.006 RDS(ON) [Ω], Drain-Source On-Resistance 4 5 6 VGS,Gate-Source Voltage[V] VDS = 15V VDS = 37.5V VDS = 60V 8 6 4 2 *Note: ID = 80A 0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FDP047N08 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 80A 0.5 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 180 1000 150 100µs 100 1ms 10ms DC Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] ID, Drain Current [A] 30µs *Notes: 1 o 120 90 60 Limited by package 1. TC = 25 C 30 o 2. TJ = 175 C 3. Single Pulse 0 25 0.1 1 10 VDS, Drain-Source Voltage [V] 100 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 2 Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.05 t1 t2 0.02 0.01 0.01 *Notes: o 1. ZθJC(t) = 0.56 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 FDP047N08 Rev. A PDM 0.1 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDP047N08 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP047N08 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP047N08 Rev. A 5 www.fairchildsemi.com FDP047N08 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP047N08 Rev. A 6 www.fairchildsemi.com FDP047N08 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 FDP047N08 Rev. A 7 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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