Fairchild FDP100N10 N-channel powertrenchâ® mosfet 100v, 75a, 10mî© Datasheet

FDP100N10
N-Channel PowerTrench® MOSFET
100V, 75A, 10mΩ
Features
Description
• RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handing capability
• RoHS compliant
Applications
• DC to DC converters / Synchronous Rectification
D
G
G D S
TO-220
FDP Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
- Continuous (TC = 75oC)
IDM
Drain Current
- Pulsed
Ratings
100
Units
V
±20
V
75
A
(Note 1)
300
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
365
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6
V/ns
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(TC = 25oC)
- Derate above 25oC
208
W
1.4
W/oC
-55 to +175
oC
300
oC
Ratings
Units
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
0.72
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2012 Fairchild Semiconductor Corporation
FDP100N10 Rev. C1
1
o
C/W
www.fairchildsemi.com
FDP100N10 N-Channel PowerTrench® MOSFET
March 2012
Device Marking
FDP100N10
Device
FDP100N10
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
ID = 250μA, VGS = 0V, TJ = 25oC
100
-
-
V
ID = 250μA, Referenced to 25oC
-
0.1
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VDS = 100V, VGS = 0V
-
-
1
VDS = 100V, VGS = 0V, TJ = 150oC
-
-
500
VGS = ±20V, VDS = 0V
-
-
±100
2.5
-
4.5
V
-
8.2
10
mΩ
-
110
-
S
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
gFS
Forward Transconductance
VDS = 10V, ID = 37.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 50V, ID = 75A
VGS = 10V
(Note 4, 5)
-
5500
7300
pF
-
530
710
pF
-
220
325
pF
-
76
100
nC
-
30
-
nC
-
20
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 50V, ID = 75A
VGS = 10V, RGEN = 25Ω
(Note 4, 5)
-
70
150
ns
-
265
540
ns
-
125
260
ns
-
115
240
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
75
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
300
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
-
-
1.25
V
trr
Reverse Recovery Time
-
71
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/μs
-
164
-
nC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.13mH, IAS = 75A, VDD = 25V, RG = 25Ω, Starting TJ = 25oC
3: ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP100N10 Rev. C1
2
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FDP100N10 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
ID,Drain Current[A]
ID,Drain Current[A]
500
Figure 2. Transfer Characteristics
1000
10
100
o
150 C
o
-55 C
o
25 C
10
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
5
0.1
1
1
VDS,Drain-Source Voltage[V]
5
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
6
8
10
VGS,Gate-Source Voltage[V]
1000
IS, Reverse Drain Current [A]
0.015
VGS = 10V
0.010
VGS = 20V
0.005
100
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
0.000
*Note: TJ = 25 C
0
50
100 150 200 250
ID, Drain Current [A]
300
1
0.2
350
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.4
Figure 6. Gate Charge Characteristics
8000
10
6000
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
4000
Coss
2000
0
0.1
FDP100N10 Rev. C1
Crss
1
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 5. Capacitance Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
12
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.020
RDS(ON) [Ω],
Drain-Source On-Resistance
2
8
6
4
2
0
30
3
VDS = 80V
VDS = 50V
VDS = 25V
*Note: ID = 75A
0
15
30
45
60
75
Qg, Total Gate Charge [nC]
90
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FDP100N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
0.0
-100
200
500
100
100
80
100 μs
10
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
1 ms
Tc = 25 oC
0.1
0.1
1
10
100
200
60
40
20
10 ms
100 ms
DC
RθJc = 0.72 oC/W
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
ID, Drain Current [A]
ID, DRAIN CURRENT (A)
Figure 9. Maximum Safe Operating Area
1
*Notes:
1. VGS = 10V
2. ID = 75A
0.5
0
25
400
50
VDS, DRAIN to SOURCE VOLTAGE (V)
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
0.1
t1
0.02
0.01
0.01
t2
*Notes:
Single pulse
1E-3
-5
10
FDP100N10 Rev. C1
PDM
0.05
o
1. ZθJC(t) = 0.72 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
4
-1
10
0
10
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FDP100N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP100N10 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP100N10 Rev. C1
5
www.fairchildsemi.com
FDP100N10 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDP100N10 Rev. C1
6
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FDP100N10 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220
FDP100N10 Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDP100N10 Rev. C1
8
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FDP100N10 N-Channel PowerTrench® MOSFET
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