Fairchild FDP18N20F N-channel mosfet 200v, 18a, 0.14î© Datasheet

UniFETTM
FDP18N20F / FDPF18N20FT
tm
N-Channel MOSFET
200V, 18A, 0.14Ω
Features
Description
• RDS(on) = 0.12Ω ( Typ.)@ VGS = 10V, ID = 9A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( Typ. 20nC)
• Low Crss ( Typ. 24pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
D
G
G D S
TO-220
FDP Series
TO-220F
FDPF Series
GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP18N20F FDPF18N20FT
200
Units
V
±30
V
-Continuous (TC = 25oC)
18
18*
-Continuous (TC = 100oC)
10.8
10.8*
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
18
A
EAR
Repetitive Avalanche Energy
(Note 1)
10
mJ
dv/dt
Peak Diode Recovery dv/dt
- Pulsed
(Note 1)
72*
324
(Note 3)
A
mJ
4.5
V/ns
(TC = 25oC)
100
41
W
- Derate above 25oC
0.83
0.33
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
72
(Note 2)
A
-55 to +150
oC
300
oC
FDP18N20F FDPF18N20FT
Units
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
1.2
3.0
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2009 Fairchild Semiconductor Corporation
FDP18N20F / FDPF18N20FT Rev. A
1
oC/W
www.fairchildsemi.com
FDP18N20F / FDPF18N20FT N-Channel MOSFET
September 2009
Device Marking
FDP18N20F
Device
FDP18N20F
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF18N20FT
FDPF18N20FT
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250µA, VGS = 0V, TJ = 25oC
200
-
-
V
ID = 250µA, Referenced to 25oC
-
0.2
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 200V, VGS = 0V
-
-
10
VDS = 160V, TC = 125oC
-
-
100
µA
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.12
0.14
Ω
-
13.6
-
S
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
Static Drain to Source On Resistance
VGS = 10V, ID = 9A
gFS
Forward Transconductance
VDS = 20V, ID = 9A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 160V, ID = 18A
VGS = 10V
(Note 4, 5)
-
885
1180
pF
-
200
270
pF
-
24
35
pF
-
20
26
nC
-
5
-
nC
-
9
-
nC
-
16
40
ns
-
50
110
ns
-
50
110
ns
-
40
90
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 100V, ID = 18A
RG = 25Ω
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
18
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
72
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 18A
-
-
1.5
V
trr
Reverse Recovery Time
-
80
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 18A
dIF/dt = 100A/µs
-
240
-
nC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP18N20F / FDPF18N20FT Rev. A
2
www.fairchildsemi.com
FDP18N20F / FDPF18N20FT N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
VGS = 10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID,Drain Current[A]
ID,Drain Current[A]
50
o
10
150 C
o
25 C
*Notes:
1. 250µs Pulse Test
1
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
o
2. TC = 25 C
1
0.1
1
VDS,Drain-Source Voltage[V]
10
4
5
6
VGS,Gate-Source Voltage[V]
0.25
100
IS, Reverse Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
RDS(ON) [Ω],
Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.20
VGS = 10V
VGS = 20V
0.15
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TJ = 25 C
2. 250µs Pulse Test
0.10
0
10
20
30
ID, Drain Current [A]
40
1
0.0
50
Figure 5. Capacitance Characteristics
2.0
10
1500
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
1000
Coss
500
VDS = 40V
VDS = 100V
VDS = 160V
8
6
4
2
Crss
0
0.1
0.4
0.8
1.2
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
2000
Capacitances [pF]
7
*Note: ID = 18A
0
1
10
VDS, Drain-Source Voltage [V]
FDP18N20F / FDPF18N20FT Rev. A
0
30
3
6
12
18
Qg, Total Gate Charge [nC]
24
www.fairchildsemi.com
FDP18N20F / FDPF18N20FT N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8-1. Maximum Safe Operating Area
- FDP18N20F
100
20µs
100µs
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
10
1ms
Operation in This Area
is Limited by R DS(on)
1
DC
*Notes:
o
0.1
0.9
1. TC = 25 C
*Notes:
1. VGS = 0V
2. ID = 250µA
0.8
-100
10ms
o
2. TJ = 150 C
3. Single Pulse
0.01
-50
0
50
100 o 150
TJ, Junction Temperature [ C]
1
200
Figure 8-2. Maximum Safe Operating Area
- FDPF18N20FT
10
100
VDS, Drain-Source Voltage [V]
600
Figure 9. Maximum Drain Current
vs. Case Temperature
100
20
10µs
16
1ms
Operation in This Area
is Limited by R DS(on)
1
ID, Drain Current [A]
ID, Drain Current [A]
100µs
10
10ms
DC
*Notes:
o
0.1
1. TC = 25 C
8
4
o
2. TJ = 150 C
3. Single Pulse
0.01
1
12
0
25
600
10
100
VDS, Drain-Source Voltage [V]
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10-1. Transient Thermal Response Curve - FDP18N20F
2
Thermal Response [ZθJC]
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
*Notes:
t2
o
0.01
-5
10
FDP18N20F / FDPF18N20FT Rev. A
1. ZθJC(t) = 1.2 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
-4
10
-3
-2
-1
0
10
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
2
10
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP18N20F / FDPF18N20FT N-Channel MOSFET
Figure 10-2. Transient Thermal Response Curve - FDPF18N20FT
Thermal Response [ZθJC]
2
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
t2
0.01
*Notes:
o
0.01
-5
10
FDP18N20F / FDPF18N20FT Rev. A
1. ZθJC(t) = 3.0 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
-4
10
-3
-2
-1
0
10
10
10
10
Rectangular Pulse Duration [sec]
5
1
10
2
10
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP18N20F / FDPF18N20FT Rev. A
6
www.fairchildsemi.com
FDP18N20F / FDPF18N20FT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D U T
V
D S
_
I
S D
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as D U T
V
D D
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id t h
D = -------------------------G a te P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I
S D
d i/ d t
( D U T )
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T )
B o d y D io d e R e c o v e r y d v / d t
V
V
S D
D D
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDP18N20F / FDPF18N20FT Rev. A
7
www.fairchildsemi.com
FDP18N20F / FDPF18N20FT N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP18N20F / FDPF18N20FT Rev. A
8
www.fairchildsemi.com
FDP18N20F / FDPF18N20FT N-Channel MOSFET
Package Dimensions
TO-220F Potted
* Front/Back Side Isolation Voltage : 4000V
Dimensions in Millimeters
FDP18N20F / FDPF18N20FT Rev. A
9
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
10
FDP18N20F / FDPF18N20FT Rev. A
www.fairchildsemi.com
FDP18N20F / FDPF18N20FT N-Channel MOSFET
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