Fairchild FDP20N50F N-channel mosfet, frfet 500v, 20a, 0.26î© Datasheet

UniFETTM
FDP20N50F / FDPF20N50FT
tm
N-Channel MOSFET, FRFET
500V, 20A, 0.26Ω
Features
• RDS(on) = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A
Description
• Low gate charge ( Typ. 50nC)
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low Crss ( Typ. 27pF)
• Fast reverse recovery switching of built-in diode
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
D
G
G D S
TO-220
FDP Series
TO-220F
FDPF Series
GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP20N50F
FDPF20N50FT
500
Units
V
±30
-Continuous (TC = 25oC)
V
20
20*
12.9
12.9*
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
20
A
EAR
Repetitive Avalanche Energy
(Note 1)
25
mJ
dv/dt
Peak Diode Recovery dv/dt
-Continuous (TC = 100oC)
- Pulsed
(Note 1)
80*
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Derate above 25oC
A
1110
(Note 3)
(TC = 25oC)
PD
TL
80
(Note 2)
A
mJ
4.5
V/ns
250
38.5
W
2.0
0.3
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP20N50F
FDPF20N50FT
RθJC
Symbol
Thermal Resistance, Junction to Case
Parameter
0.5
3.3
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP20N50F / FDPF20N50FT Rev. A1
1
Units
o
C/W
www.fairchildsemi.com
FDP20N50F / FDPF20N50FT N-Channel MOSFET
October 2007
Device Marking
FDP20N50F
Device
FDP20N50F
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF20N50FT
FDPF20N50FT
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
500
-
-
V
-
0.7
-
V/oC
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to
25oC
VDS = 500V, VGS = 0V
-
-
10
VDS = 400V, TC = 125oC
-
-
100
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.22
0.26
Ω
-
25
-
S
µA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
Static Drain to Source On Resistance
VGS = 10V, ID = 10A
gFS
Forward Transconductance
VDS = 20V, ID = 10A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 20A
VGS = 10V
(Note 4, 5)
-
2550
3390
pF
-
350
465
pF
-
27
40
pF
-
50
65
nC
-
14
-
nC
-
20
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 20A
RG = 25Ω
(Note 4, 5)
-
45
100
ns
-
120
250
ns
-
100
210
ns
-
60
130
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
20
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
80
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 20A
-
-
1.5
V
trr
Reverse Recovery Time
154
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 20A
dIF/dt = 100A/µs
-
0.5
-
µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP20N50F / FDPF20N50FT Rev. A1
2
www.fairchildsemi.com
FDP20N50F / FDPF20N50FT N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
Figure 2. Transfer Characteristics
100
o
ID,Drain Current[A]
ID,Drain Current[A]
80
1
150 C
o
25 C
10
*Notes:
1. 250µs Pulse Test
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
o
2. TC = 25 C
1
VDS,Drain-Source Voltage[V]
1
10
20
4
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.5
400
0.4
VGS = 10V
0.3
VGS = 20V
0.2
100
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
0.1
*Note: TJ = 25 C
0
25
50
ID, Drain Current [A]
1
0.0
75
Figure 5. Capacitance Characteristics
4500
3000
1500
0
0.1
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
1
10
VDS, Drain-Source Voltage [V]
FDP20N50F / FDPF20N50FT Rev. A1
2.5
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
Coss
2. 250µs Pulse Test
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
6000
Capacitances [pF]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
0.3
0.1
8
6
4
2
0
50
3
VDS = 100V
VDS = 250V
VDS = 400V
*Note: ID = 20A
0
10
20
30
40
50
Qg, Total Gate Charge [nC]
60
www.fairchildsemi.com
FDP20N50F / FDPF20N50FT N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDP20N50F
200
100
1.1
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1 ms
10 ms
10
100 ms
Operation in This Area
is Limited by R DS(on)
1
DC
*Notes:
0.1
o
1. TC = 25 C
o
0.01
200
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
800
Figure 9. Maximum Safe Operating Area
- FDPF20N50FT
Figure 10. Maximum Drain Current
vs. Case Temperature
200
100
25
40µs
100µs
10
20
ID, Drain Current [A]
ID, Drain Current [A]
10 µs
100 µs
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1
o
15
10
5
1. TC = 25 C
o
0.01
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
800
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve - FDP20N50F
Thermal Response [ZθJC]
1
0.5
0.1
0.2
PDM
0.1
0.02
t2
*Notes:
0.01
o
1. ZθJC(t) = 0.5 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
0.002
-5
10
t1
t2
t1
0.05
0.01
PDM
-4
10
-3
10
-2
-1
10
10
0
10
1
10
Rectangular Pulse Duration [sec]
FDP20N50F / FDPF20N50FT Rev. A1
4
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP20N50F / FDPF20N50FT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF20N50FT
Thermal Response [ZθJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
0.01
o
1. ZθJC(t) = 3.3 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-4
10
FDP20N50F / FDPF20N50FT Rev. A1
t2
*Notes:
-3
10
-2
-1
0
1
10
10
10
10
Rectangular Pulse Duration [sec]
5
2
10
3
10
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP20N50F / FDPF20N50FT Rev. A1
6
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FDP20N50F / FDPF20N50FT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDP20N50F / FDPF20N50FT Rev. A1
7
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
FDP20N50F / FDPF20N50FT Rev. A1
8
www.fairchildsemi.com
FDP20N50F / FDPF20N50FT N-Channel MOSFET
Mechanical Dimensions
FDP20N50F / FDPF20N50FT N-Channel MOSFET
Mechanical Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP20N50F / FDPF20N50FT Rev. A1
9
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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information only
Rev. I31
FDP20N50F / FDPF20N50FT Rev. A1
10
www.fairchildsemi.com
FDP20N50F / FDPF20N50FT N-Channel MOSFET
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