FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET ™ General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode. • 21 A, 30 V. RDS(ON) = 15.5 mΩ @ VGS = 10 V RDS(ON) = 23.0 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (11nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability D D G G D TO-220 S G S TO-263AB FDP Series Absolute Maximum Ratings Symbol FDB Series T A =25 oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS ID Gate-Source Voltage Drain Current – Continuous – Pulsed Ratings Units 30 V ±20 V A (Note 1) 42 (Note 1) 140 PD Total Power Dissipation @ TC = 25°C TJ, TSTG Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Derate above 25°C TL S 48 W 0.5 W/°C –55 to +150 °C 275 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 2.6 °C/W 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6690S FDB6690S 13’’ 24mm 800 units FDP6690S FDP6690S Tube n/a 45 2001 Fairchild Semiconductor Corporation FDP6690S/FDB6690S Rev C (W) FDP6690S/FDB6690S SEPTEMBER 2001 Symbol T A = 25°C unless otherwise noted Parameter Drain-Source Avalanche Ratings W DSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Test Conditions Min Typ Max Units (Note 2) Single Pulse, VDD = 25 V, ID=11A 140 mJ 11 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 10mA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA 3 V On Characteristics ID = 1mA 30 V 25 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 10mA, Referenced to 25°C ID = 1mA 1 ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 23 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2.2 –4 VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 17 A VGS=10 V, ID =21 A, TJ=125°C 12.0 18.5 18.0 mV/°C 15.5 23.0 22.5 60 mΩ A 33 S 1238 pF 342 pF 104 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 11 20 ns 9 18 ns Turn–Off Delay Time 23 37 ns tf Turn–Off Fall Time 13 23 ns Qg Total Gate Charge 11 15 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 10 V, VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 21A, 5 nC 4 nC Drain–Source Diode Characteristics VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/µs (Note 1) 0.51 0.69 21 (Note 2) 25 (Note 1) 0.7 V nS nC Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. FDP6690S/FDB6690S Rev C (W) FDP6690S/FDB6690S Electrical Characteristics FDP6690S/FDB6690S Typical Characteristics 2.2 80 6.0V 5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D, DRAIN CURRENT (A) VGS = 10V 60 4.5V 40 4.0V 20 3.5V VGS = 4.0V 2 1.8 1.6 4.5V 5.0V 1.4 6.0V 1.2 7.0V 8.0V 10V 1 0.8 0 0 0 1 2 3 4 VD S, DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.055 1.6 I D = 21A VGS =10V RDS(ON), ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 -50 ID = 21 A 0.045 0.035 o T A = 125 C 0.025 o T A = 25 C 0.015 0.005 -25 0 25 50 75 o TJ , JUNCTION TEMPERATURE ( C) 100 2 125 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 40 10 VGS = 0V o o TA = -55 C 25 C 30 o 125 C 20 10 0 I S, REVERSE DRAIN CURRENT (A) VD S = 5V ID, DRAIN CURRENT (A) 20 5 1 o T A = 125 C o 25 C 0.1 o -55 C 0.01 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6690S/FDB6690S Rev C (W) (continued) 1600 VD S = 10V I D = 21A 15V f = 1MHz VGS = 0 V C ISS 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 4 1200 800 C OSS 400 2 CRSS 0 0 0 5 10 15 20 0 25 5 Qg , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) I D, DRAIN CURRENT (A) 10µs 100 100µs 1ms 10 10ms 100ms DC VGS = 10V SINGLE PULSE o R θJC = 2.6 C/W o TA = 25 C 1 0.1 20 25 30 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 2000 SINGLE PULSE R θJC = 2.6°C/W TA = 25°C 1600 1200 800 400 0 0.00001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 1000 RDS(ON) LIMIT 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θ JC(t) = r(t) * Rθ J C R θJ C = 2.6 °C/W 0.2 0.1 0.1 P(pk t1 0.05 t2 T J - Tc = P * Rθ JC(t) Duty Cycle, D = t1 / t2 0.02 0.01 0.01 0.00001 SINGLE PULSE 0.0001 0.001 0.01 0.1 1 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. FDP6690S/FDB6690S Rev C (W) FDP6690S/FDB6690S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.01 CURRENT: 0.8A/div I DSS, REVERSE LEAKAGE CURRENT (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6690S. o T A = 100 C 0.001 0.0001 o TA = 25 C 0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V) TIME: 12.5ns/div Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDP6690S SyncFET body diode reverse recovery characteristic. CURRENT: 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP6035AL). TIME: 12.5ns/div Figure 13. Non-SyncFET (FDP6035AL) body diode reverse recovery characteristic. FDP6690S/FDB6690S Rev C (W) FDP6690S/FDB6690S Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4