FDP8440 N-Channel PowerTrench® MOSFET tm 40V, 277A, 2.2mΩ Features Application • RDS(on) = 1.64mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Electronic Steering • RoHS Compliant • Integrated Starter/ Alternator • Distributed Power Architectures and VRMs • Primary Switch for 12V Systems D G D S G TO-220 FDP Series S MOSFET Maximum Ratings T C Symbol = 25oC unless otherwise noted Parameter Ratings Units VDSS Drain to Source Voltage 40 V VGSS Gate to Source Voltage ±20 V 277* 196* 100 A (Note 1) 500 A (Note 2) 1682 mJ 306 W 2.04 W/oC Drain Current ID - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) IDM Drain Current EAS Single Pulsed Avalanche Energy - Pulsed (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25 oC o -55 to +175 C oC 300 *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A. Thermal Characteristics RθJC Thermal Resistance, Junction to Case 0.49 RθCS Thermal Resistance, Case to Sink (Typ.) 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2009 Fairchild Semiconductor Corporation FDP8440 Rev. A6 1 o C/W oC/W o C/W www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET January 2009 Device Marking Device Package Reel Size Tape Width Quantity FDP8440 FDP8440 TO-220 N/A N/A 50units Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units 40 -- -- V -- -- 1 μA Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0V, ID = 250μA VDS = 32V o VGS = 0V -- -- 250 μA VGS = ±20V -- -- ±100 nA VDS = VGS, ID = 250μA 1 -- 3 V TC = 150 C On Characteristics VGS(th) Gate to Source Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 80A -- 1.88 2.4 VGS = 10V, ID = 80A -- 1.64 2.2 VGS = 10V, ID = 80A, TC = 175oC -- 3.00 4.4 -- 18600 24740 mΩ Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz pF Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 0.5V, f = 1MHz -- 1.1 -- Ω Qg(tot) Total Gate Charge at 10V VGS = 0V to 10V -- 345 450 nC Qg(2) Threshold Gate Charge VGS = 0V to 2V VDD = 20V -- 32.5 -- nC Qgs Gate to Source Gate Charge ID = 80A -- 49 -- nC Qgs2 Gate Charge Threshold to Plateau Ig = 1.0mA Qgd Gate to Drain “Miller” Charge Switching Characteristics -- 1840 2450 pF -- 1400 2100 pF -- 16.5 -- nC -- 74 -- nC -- 175 360 ns (VGS = 10V) tON Turn-On Time td(on) Turn-On Delay Time tr Rise Time VDD = 20V,ID = 80A VGS = 10V, RGEN = 7Ω -- 43 95 ns -- 130 275 ns td(off) Turn-Off Delay Time -- 435 875 ns tf Fall Time -- 290 590 ns tOFF Turn-Off Time -- 730 1470 ns ISD = 80A -- -- 1.25 V ISD = 40A -- -- 1.0 V Drain-Source Diode Characteristics and Maximum Ratings VSD Source to Drain Diode Voltage trr Reverse Recovery Time ISD = 75A, dISD/dt = 100A/μs -- 59 -- ns QRR Reverse Recovery Charge ISD = 75A, dISD/dt = 100A/μs -- 77 -- nC NOTES: 1: Pulse width limited by maximum junction temperature. 2: Starting TJ = 25°C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V. FDP8440 Rev. A6 2 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 400 100 ID,Drain Current[A] ID,Drain Current[A] 100 VGS = 10.0 V 7.0 V 5.0 V 3.5 V 3.0 V 2.5 V 10 o 150 C o -55 C 10 o 25 C * Notes : 1. 250μs Pulse Test 1 * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 0.4 0.04 2. TC = 25 C 0.1 VDS,Drain-Source Voltage[V] 1 1 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0 2 4 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.80 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 1000 1.76 VGS = 4.5V 1.72 VGS = 10V 100 o 150 C o 25 C 10 Notes: 1. VGS = 0V o * Note : TJ = 25 C 1.68 0 50 100 150 ID, Drain Current [A] 200 2. 250μs Pulse Test 1 0.3 250 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 18000 12000 * Note: 1. VGS = 0V 2. f = 1MHz Coss 1.2 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 24000 0.6 0.9 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 30000 Capacitances [pF] 6 6000 VDS = 25V VDS = 20V VDS = 15V 8 6 4 2 Crss 0 -1 10 FDP8440 Rev. A6 0 10 VDS, Drain-Source Voltage [V] 1 10 0 20 3 * Note : ID = 80A 0 100 200 300 Qg, Total Gate Charge [nC] 400 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 0.5 * Notes : 1. VGS = 10V 2. ID = 80A 0.0 -100 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Safe Operating Area Figure 9. Unclamped Inductive Switching Capability 3000 200 1000 ID, Drain Current [A] 100 IAS, AVALANCHE CURRENT(A) 2.0 o TJ = 25 C o TJ = 150 C 10 100μs 100 10 1ms Operation in This Area is Limited by R DS(on) 10ms *Notes: 1 o 1. TC = 25 C 100ms o 1 0.01 0.1 1 10 100 1000 0.1 10000 2. TJ = 175 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] tAV, TIME IN AVALANCHE(ms) Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 t2 * Notes : 0.01 o 1. ZθJC(t) = 0.49 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 FDP8440 Rev. A6 PDM 0.05 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 0 10 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP8440 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP8440 Rev. A6 5 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP8440 Rev. A6 6 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 FDP8440 Rev. A6 7 www.fairchildsemi.com FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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