UniFET
FDPF12N35
350V N-Channel MOSFET
Features
Description
• 7.5A, 350V, RDS(on) = 0.38Ω @VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 15 pF)
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
{
z
G
{
GD S
z
z
TO-220F
{
S
FDPF Series
Absolute Maximum Ratings
Symbol
Parameter
FDPF12N35
Unit
350
V
7.5
4.5
A
A
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
(Note 1)
5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
50
0.35
W
W/°C
-55 to +150
°C
300
°C
30
A
±30
V
(Note 2)
335
mJ
(Note 1)
7.5
A
(Note 1)
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
RθJC
Thermal Resistance, Junction-to-Case
--
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
©2006 Fairchild Semiconductor Corporation
FDPF12N35 Rev. A
1
www.fairchildsemi.com
FDPF12N35 350V N-Channel MOSFET
February 2006
TM
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF12N35
FDPF12N35
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
350
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.35
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 350V, VGS = 0V
VDS = 280V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 3.75A
--
0.32
0.38
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 3.75A
--
13
--
S
--
855
1110
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
135
175
pF
--
15
25
pF
--
30
70
ns
--
180
370
ns
--
35
80
ns
--
60
130
ns
--
18
25
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 175V, ID = 12A
RG = 25Ω
(Note 4, 5)
VDS = 280V, ID = 12A
VGS = 10V
(Note 4, 5)
--
5
--
nC
--
8
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
30
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 7.5A
--
--
1.4
V
trr
Reverse Recovery Time
--
270
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 12A
dIF/dt =100A/µs
--
2.3
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, IAS = 7.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDPF12N35 Rev. A
2
www.fairchildsemi.com
FDPF12N35 350V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
ID, Drain Current [A]
10
ID, Drain Current [A]
Top :
0
10
1
10
o
150 C
o
25 C
o
-55 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
-1
10
0
-1
0
10
10
1
10
10
2
4
VDS, Drain-Source Voltage [V]
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2
10
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1.2
1.0
0.8
VGS = 10V
0.6
VGS = 20V
0.4
1
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0.2
0
0
5
10
15
20
25
30
10
35
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
1800
1600
Capacitances [pF]
1400
1200
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Ciss
1000
800
600
400
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
0
-1
10
VDS = 175V
VDS = 280V
8
6
4
2
※ Note : ID = 12A
0
10
0
1
10
0
2
4
6
8
10
12
14
16
18
20
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FDPF12N35 Rev. A
VDS = 70V
10
3
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FDPF12N35 350V N-Channel MOSFET
Typical Performance Characteristics
FDPF12N35 350V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 3.75 A
0.5
0.0
-100
200
-50
0
50
100
o
TJ, Junction Temperature [ C]
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2
10
8
100 µs
1 ms
6
ID, Drain Current [A]
ID, Drain Current [A]
1
10
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
0
10
DC
※ Notes :
-1
10
o
1. TC = 25 C
4
2
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
0
25
2
10
10
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
10
D = 0 .5
0
0 .2
0 .1
※ N o te s :
1 . Z θ J C( t) = 2 .5 ℃ / W M a x .
2 . D u t y F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .0 5
10
-1
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]
FDPF12N35 Rev. A
4
www.fairchildsemi.com
FDPF12N35 350V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
V
G
S
S
a
m
eT
y
p
e
a
sD
U
T
5
0
K
Ω
2
0
0
n
F
1
2
V
Q
g
1
0
V
3
0
0
n
F
V
D
S
V
G
S
Q
g
s
Q
g
d
D
U
T
3
m
A
C
h
a
rg
e
Resistive Switching Test Circuit & Waveforms
V
D
S
R
G
R
L
V
D
S
9
0
%
V
D
D
V
G
S
1
0
%
V
G
S
D
U
T
1
0
V
t
d
(
o
n
)
t
r
t
d
(
o
f
f
)
to
n
t
f
to
f
f
Unclamped Inductive Switching Test Circuit & Waveforms
B
V
D
S
S
1
2-L
E
=
IA
A
S
S
2
-V
B
V
D
S
S
D
D
L
V
D
S
B
V
D
S
S
IA
S
ID
R
G
1
0
V
V
D
D
V
(
t)
D
S
V
D
D
D
U
T
tp
FDPF12N35 Rev. A
ID
(
t)
tp
5
T
im
e
www.fairchildsemi.com
FDPF12N35 350V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
GS
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a te P u ls e W id t h
D = -------------------------G a t e P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e
F o r w a r d V o lta g e D r o p
FDPF12N35 Rev. A
6
www.fairchildsemi.com
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDPF12N35 Rev. A
7
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FDPF12N35 350V N-Channel MOSFET
Mechanical Dimensions
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As used herein:
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
8
FDPF12N35 Rev. A
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FDPF12N35 350V N-Channel MOSFET
TRADEMARKS