Fairchild FDPF12N50FT N-channel mosfet 500v, 11.5a, 0.7î© Datasheet

UniFETTM
FDP12N50F / FDPF12N50FT
tm
N-Channel MOSFET
500V, 11.5A, 0.7Ω
Features
Description
• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low gate charge ( Typ. 21nC)
• Low Crss ( Typ. 11pF)
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
D
G
G D S
TO-220
FDP Series
TO-220F
FDPF Series
GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP12N50F FDPF12N50FT
500
Units
V
±30
V
-Continuous (TC = 25oC)
11.5
11.5*
6.9
6.9*
ID
Drain Current
-Continuous (TC = 100oC)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
11.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
16.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 1)
46*
A
456
(Note 3)
mJ
4.5
V/ns
(TC = 25oC)
165
42
W
- Derate above 25oC
1.33
0.33
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
46
(Note 2)
A
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP12N50F FDPF12N50FT
RθJC
Thermal Resistance, Junction to Case
0.75
3.0
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP12N50F / FDPF12N50FT Rev. A1
1
Units
o
C/W
www.fairchildsemi.com
FDP12N50F / FDPF12N50FT N-Channel MOSFET
December 2007
Device Marking
FDP12N50F
Device
FDP12N50F
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF12N50FT
FDPF12N50FT
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
500
-
-
V
-
0.5
-
V/oC
µA
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250µA, VGS = 0V, TJ = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
10
VDS = 400V, TC = 125oC
-
-
100
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.59
0.7
Ω
-
12
-
S
-
1050
1395
pF
-
135
180
pF
-
11
17
pF
-
21
30
nC
-
6
-
nC
-
9
-
nC
ID = 250µA, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
Static Drain to Source On Resistance
VGS = 10V, ID = 6A
gFS
Forward Transconductance
VDS = 40V, ID = 6A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4, 5)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 11.5A
RG = 25Ω
(Note 4, 5)
-
21
50
ns
-
45
100
ns
-
50
110
ns
-
35
80
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
11.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
46
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
-
-
1.5
V
trr
Reverse Recovery Time
134
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/µs
-
0.37
-
µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP12N50F / FDPF12N50FT Rev. A1
2
www.fairchildsemi.com
FDP12N50F / FDPF12N50FT N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
30
ID,Drain Current[A]
10
ID,Drain Current[A]
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
1
o
25 C
*Notes:
1. 250µs Pulse Test
0.1
* Notes :
1. VDS = 20V
2. 250µs Pulse Test
o
0.05
0.1
2. TC = 25 C
1
VDS,Drain-Source Voltage[V]
1
20
10
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5
6
7
VGS,Gate-Source Voltage[V]
100
IS, Reverse Drain Current [A]
0.8
0.7
VGS = 10V
VGS = 20V
0.6
o
150 C
10
o
25 C
Notes:
1. VGS = 0V
o
* Note : TJ = 25 C
0.5
0
6
12
ID, Drain Current [A]
1
0.0
18
2. 250µs Pulse Test
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
10
1500
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
Coss
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.9
RDS(on) [Ω],
Drain-Source On-Resistance
o
150 C
* Note:
1. VGS = 0V
2. f = 1MHz
1000
500
Crss
0
0.1
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 11.5A
0
1
10
VDS, Drain-Source Voltage [V]
FDP12N50F / FDPF12N50FT Rev. A1
0
30
3
4
8
12
16
Qg, Total Gate Charge [nC]
20
24
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FDP12N50F / FDPF12N50FT N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDP12N50F
100
20µs
1.1
100µs
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.0
10
DC
1
0.9
Operation in This Area
is Limited by R DS(on)
* Notes :
0.1
o
* Notes :
1. VGS = 0V
2. ID = 250µA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
200
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Safe Operating Area
- FDPF12N50FT
Figure 10. Maximum Drain Current
vs. Case Temperature
100
14
20µs
12
100µs
10
ID, Drain Current [A]
ID, Drain Current [A]
1ms
10ms
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
* Notes :
0.1
10
8
6
4
o
1. TC = 25 C
2
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve - FDP12N50F
Thermal Response [ZθJC]
3
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
* Notes :
Single pulse
1E-3
-5
10
FDP12N50F / FDPF12N50FT Rev. A1
t2
0.01
o
1. ZθJC(t) = 0.75 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
10
-2
-1
0
1
10
10
10
10
Rectangular Pulse Duration [sec]
4
2
10
3
10
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FDP12N50F / FDPF12N50FT N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP12N50F / FDPF12N50FT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF12N50FT
Thermal Response [ZθJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
t2
0.01
* Notes :
Single pulse
o
1. ZθJC(t) = 3 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
-4
10
FDP12N50F / FDPF12N50FT Rev. A1
-3
10
-2
-1
0
1
10
10
10
10
Rectangular Pulse Duration [sec]
5
2
10
3
10
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FDP12N50F / FDPF12N50FT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP12N50F / FDPF12N50FT Rev. A1
6
www.fairchildsemi.com
FDP12N50F / FDPF12N50FT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDP12N50F / FDPF12N50FT Rev. A1
7
www.fairchildsemi.com
FDP12N50F / FDPF12N50FT N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP12N50F / FDPF12N50FT Rev. A1
8
www.fairchildsemi.com
FDP12N50F / FDPF12N50FT N-Channel MOSFET
Mechanical Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
15.87 ±0.20
(1.00x45°)
MAX1.47
0.80 ±0.10
)
0°
(3
9.75 ±0.30
15.80 ±0.20
6.68 ±0.20
(0.70)
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP12N50F / FDPF12N50FT Rev. A1
9
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Advance Information
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This datasheet contains the design specifications for product development.
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Rev. I32
10
FDP12N50F / FDPF12N50FT Rev. A1
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FDP12N50F / FDPF12N50FT N-Channel MOSFET
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