Fairchild FDPF14N30 300v n-channel mosfet Datasheet

UniFET
TM
FDP14N30 / FDPF14N30
300V N-Channel MOSFET
Features
Description
• 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 17 pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G
G DS
TO-220
TO-220F
GD S
FDP Series
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FDP14N30
FDPF14N30
300
Unit
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
330
mJ
IAR
Avalanche Current
(Note 1)
14
A
EAR
Repetitive Avalanche Energy
(Note 1)
14
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(TC = 25°C)
- Derate above 25°C
V
14
8.4
14 *
8.4 ∗
A
A
56
56 ∗
A
4.5
V/ns
140
1.12
35
0.28
W
W/°C
-55 to +150
°C
300
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FDP14N30 / FDPF14N30 Rev. A
1
FDP14N30
FDPF14N30
Unit
0.89
3.56
°C/W
0.5
--
°C/W
62.5
62.5
°C/W
www.fairchildsemi.com
FDP14N30 / FDPF14N30 300V N-Channel MOSFET
February 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP14N30
FDP14N30
TO-220
-
-
50
FDPF14N30
FDPF14N30
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
300
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.3
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 300V, VGS = 0V
VDS = 240V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.24
0.29
Ω
--
10.5
--
S
--
815
1060
pF
--
150
195
pF
--
17
25
pF
--
20
50
ns
--
105
120
ns
--
30
70
ns
--
75
160
ns
--
18
25
nC
--
4.5
--
nC
--
8
--
nC
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 7A
gFS
Forward Transconductance
VDS = 40V, ID = 7A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 150V, ID = 14A
RG = 25Ω
(Note 4, 5)
VDS = 240V, ID = 14A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
14
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
56
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 14A
--
--
1.4
V
trr
Reverse Recovery Time
--
235
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 14A
dIF/dt =100A/μs
--
1.6
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.8mH, IAS = 14A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 14A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP14N30 / FDPF14N30 Rev. A
2
www.fairchildsemi.com
FDP14N30 / FDPF14N30 300V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
2
10
10
2
10
1
Top :
1
10
ID, Drain Current [A]
ID, Drain Current [A]
Figure 2. Transfer Characteristics
0
10
o
150 C
o
25 C
o
-55 C
* Notes :
1. VDS = 40V
* Notes :
1. 250μs Pulse Test
-1
2. 250 μs Pulse Test
o
10
2. TC = 25 C
-1
0
10
10
0
2
4
6
1
10
8
10
12
VGS, Gate-Source Voltage [V]
10
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2
1.2
10
1.1
IDR, Reverse Drain Current [A]
RDS(ON) [Ω], Drain-Source On-Resistance
1.3
1.0
0.9
VGS = 10V
0.8
0.7
0.6
VGS = 20V
0.5
0.4
0.3
o
0.2
0.1
1
10
150oC
o
25 C
0
0
5
10
15
20
25
30
35
40
10
45
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Capacitances [pF]
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
* Note : TJ = 25 C
Ciss
1000
* Note :
1. VGS = 0 V
2. f = 1 MHz
Crss
10
VDS = 60V
VDS = 150V
8
VDS = 240V
6
4
2
* Note : ID = 14A
0
-1
10
0
10
0
1
10
VDS, Drain-Source Voltage [V]
FDP14N30 / FDPF14N30 Rev. A
0
2
4
6
8
10
12
14
16
18
20
QG, Total Gate Charge [nC]
3
www.fairchildsemi.com
FDP14N30 / FDPF14N30 300V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
* Notes :
1. VGS = 0 V
2. ID = 250μA
0.9
0.8
-100
-50
0
50
100
150
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 7 A
0.5
0.0
-100
200
o
TJ, Junction Temperature [ C]
-50
0
50
100
150
Figure 9-1. Maximum Safe Operating Area
- FDP14N30
Figure 9-2. Maximum Safe Operating Area
- FDPF14N30
2
2
10
10
10 μs
10 μs
ID, Drain Current [A]
ID, Drain Current [A]
100 μs
1 ms
1
10
10 ms
100 ms
DC
Operation in This Area
is Limited by R DS(on)
0
10
* Notes :
-1
10
100 μs
1
10
1 ms
10 ms
100 ms
DC
Operation in This Area
is Limited by R DS(on)
0
10
* Notes :
-1
10
o
1. TC = 25 C
o
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
2. TJ = 150 C
3. Single Pulse
-2
10
200
o
TJ, Junction Temperature [ C]
-2
0
1
10
10
2
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Currentvs. Case Temperature
ID, Drain Current [A]
15
10
5
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
FDP14N30 / FDPF14N30 Rev. A
4
www.fairchildsemi.com
FDP14N30 / FDPF14N30 300V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP14N30 / FDPF14N30 300V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP14N30
ZθJC(t), Thermal Response
10
0
D = 0 .5
0 .2
10
-1
PDM
0 .1
t1
0 .0 5
0 .0 2
0 .0 1
10
* N o te s :
o
-2
1 . Z θ J C ( t) = 0 .8 9 C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
s in g le p u ls e
10
-5
t2
10
-4
10
-3
10
-2
-1
10
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
ZθJC(t), Thermal Response
Figure 11-2. Transient Thermal Response Curve - FDPF14N30
10
1
10
0
D = 0 .5
0 .2
PDM
0 .1
0 .0 5
10
t1
0 .0 2
0 .0 1
-1
t2
* N o te s :
o
10
s in g le p u ls e
-2
10
1 . Z θ J C ( t) = 3 .5 6 C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FDP14N30 / FDPF14N30 Rev. A
5
www.fairchildsemi.com
FDP14N30 / FDPF14N30 300V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP14N30 / FDPF14N30 Rev. A
6
www.fairchildsemi.com
FDP14N30 / FDPF14N30 300V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP14N30 / FDPF14N30 Rev. A
7
www.fairchildsemi.com
FDP14N30 / FDPF14N30 300V N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP14N30 / FDPF14N30 Rev. A
8
www.fairchildsemi.com
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
FDP14N30 / FDPF14N30 Rev. A
+0.10
0.50 –0.05
4.70 ±0.20
0.35 ±0.10
9
www.fairchildsemi.com
FDP14N30 / FDPF14N30 300V N-Channel MOSFET
Mechanical Dimensions
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Definition
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
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This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
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Rev. I23
© 2007 Fairchild Semiconductor Corporation
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