Fairchild FDPF15N40 N-channel mosfet 400v, 15a, 0.3î© Datasheet

UniFETTM
FDP15N40 / FDPF15N40
tm
N-Channel MOSFET
400V, 15A, 0.3Ω
Features
Description
• RDS(on) = 0.24Ω ( Typ.)@ VGS = 10V, ID = 7.5A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low Gate Charge ( Typ. 28nC)
• Low Crss ( Typ. 17pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power
factor correction.
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
D
G
G DS
TO-220
FDP Series
TO-220F
FDPF Series
GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FDP15N40
FDPF15N40
400
Units
V
±30
V
-Continuous (TC = 25oC)
15
15*
-Continuous (TC = 100oC)
9
9*
- Pulsed
(Note 1)
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
15
A
EAR
Repetitive Avalanche Energy
(Note 1)
17
mJ
dv/dt
Peak Diode Recovery dv/dt
60*
(Note 2)
A
731
(Note 3)
mJ
15
V/ns
(TC = 25oC)
170
40
W
- Derate above 25oC
1.45
0.3
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
60
A
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP15N40
FDPF15N40
RθJC
Symbol
Thermal Resistance, Junction to Case
Parameter
0.7
3.0
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2008 Fairchild Semiconductor Corporation
FDP15N40 / FDPF15N40 Rev. A
1
Units
o
C/W
www.fairchildsemi.com
FDP15N40 / FDPF15N40 N-Channel MOSFET
October 2008
Device Marking
FDP15N40
Device
FDP15N40
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF15N40
FDPF15N40
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V, TJ = 25oC
400
-
-
V
ID = 250μA, Referenced to 25oC
-
0.5
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 400V, VGS = 0V
-
-
1
VDS = 320V, TC = 125oC
-
-
10
μA
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.24
0.3
Ω
-
15.3
-
S
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 7.5A
gFS
Forward Transconductance
VDS = 20V, ID = 7.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 320V, ID = 15A
VGS = 10V
(Note 4, 5)
-
1310
1750
pF
-
210
280
pF
-
17
25
pF
-
28
36
nC
-
8
-
nC
-
12
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 200V, ID = 15A
RG = 25Ω
(Note 4, 5)
-
26
62
ns
-
55
120
ns
-
72
154
ns
-
40
90
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
15
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
60
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 15A
-
-
1.4
V
trr
Reverse Recovery Time
-
333
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 15A
dIF/dt = 100A/μs
-
3.24
-
μC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 6.5mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 15A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP15N40 / FDPF15N40 Rev. A
2
www.fairchildsemi.com
FDP15N40 / FDPF15N40 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID,Drain Current[A]
ID,Drain Current[A]
40
Figure 2. Transfer Characteristics
60
1
o
150 C
10
o
-55 C
o
25 C
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
1
1
VDS,Drain-Source Voltage[V]
4
10
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.50
80
0.45
0.40
0.35
VGS = 10V
0.30
VGS = 20V
0.25
o
150 C
10
o
25 C
1
*Notes:
1. VGS = 0V
o
*Note: TJ = 25 C
2. 250μs Pulse Test
0.1
0.2
0.20
0
10
20
30
ID, Drain Current [A]
40
0.4
0.6
0.8
1.0
1.2 1.3
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3000
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
Capacitances [pF]
8
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
0.2
0.1
*Note:
1. VGS = 0V
2. f = 1MHz
2000
Ciss
1000
Coss
VDS = 100V
VDS = 200V
VDS = 320V
8
6
4
2
Crss
0
0.1
*Note: ID = 15A
0
1
10
VDS, Drain-Source Voltage [V]
FDP15N40 / FDPF15N40 Rev. A
0
30
3
5
10
15
20
25
Qg, Total Gate Charge [nC]
30
www.fairchildsemi.com
FDP15N40 / FDPF15N40 N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-75
-25
25
75
125
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
0.0
-75
175
*Notes:
1. VGS = 10V
2. ID = 7.5A
0.5
-25
25
75
125
o
TJ, Junction Temperature [ C]
175
Figure 9. Maximum Safe Operating Area
- FDP15N40
Figure 10. Maximum Safe Operating Area
100
16
30μs
10
1
ID, Drain Current [A]
ID, Drain Current [A]
100μs
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
o
12
8
4
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
25
0.01
1
10
100
VDS, Drain-Source Voltage [V]
800
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve - FDP15N40
Thermal Response [ZθJC]
1
0.5
0.2
0.1
0.1
t1
t2
0.02
0.01
*Notes:
0.01
o
1. ZθJC(t) = 0.7 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.002
-5
10
FDP15N40 / FDPF15N40 Rev. A
PDM
0.05
-4
10
-3
-2
-1
0
10
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
2
10
www.fairchildsemi.com
FDP15N40 / FDPF15N40 N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP15N40 / FDPF15N40 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP15N40 / FDPF15N40 Rev. A
5
www.fairchildsemi.com
FDP15N40 / FDPF15N40 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDP15N40 / FDPF15N40 Rev. A
6
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.40 ±0.20
10.00 ±0.20
FDP15N40 / FDPF15N40 Rev. A
7
www.fairchildsemi.com
FDP15N40 / FDPF15N40 N-Channel MOSFET
Mechanical Dimensions
FDP15N40 / FDPF15N40 N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP15N40 / FDPF15N40 Rev. A
8
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I37
FDP15N40 / FDPF15N40 Rev. A
9
www.fairchildsemi.com
FDP15N40 / FDPF15N40 N-Channel MOSFET
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