TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching Improved dv/dt capability This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP33N25 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt PD Power Dissipation FDPF33N25T 250 (Note 1) Unit V 33 20.4 33* 20.4* A A 132 132* A ± 30 V (Note 2) 918 mJ (Note 1) 33 A Repetitive Avalanche Energy (Note 1) 23.5 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25°C) - Derate above 25°C 235 1.89 TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 37 0.29 W W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP33N25 FDPF33N25T Unit RθJC Thermal Resistance, Junction-to-Case 0.53 3.4 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2007 Fairchild Semiconductor Corporation FDP33N25 / FDPF33N25T Rev. B 1 www.fairchildsemi.com FDP33N25 / FDPF33N25T 250V N-Channel MOSFET October Device Marking Device Package Reel Size Tape Width Quantity FDP33N25 FDP33N25 TO-220 - - 50 FDPF33N25T FDPF33N25T TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 250 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 16.5A -- 0.077 0.094 Ω gFS Forward Transconductance VDS = 40V, ID = 16.5A -- 26.6 -- S -- 1640 2135 pF -- 330 430 pF -- 39 59 pF -- 35 80 ns -- 230 470 ns -- 75 160 ns -- 120 250 ns -- 36.8 48 nC -- 10 -- nC -- 17 -- nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 33A RG = 25Ω (Note 4, 5) VDS = 200V, ID = 33A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 33A -- -- 1.4 V trr Reverse Recovery Time 220 -- ns Reverse Recovery Charge VGS = 0V, IS = 33A dIF/dt =100A/µs -- Qrr -- 1.71 -- µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 33A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDP33N25 / FDPF33N25T Rev. B www.fairchildsemi.com FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 2 10 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 10 2 10 1 o 150 C o 25 C o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250µs Pulse Test 0 10 2. 250µs Pulse Test o 2. TC = 25 C -1 0 10 10 1 10 0 10 2 4 VDS, Drain-Source Voltage [V] 6 8 10 12 VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.25 2 0.20 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 10 VGS = 10V 0.15 0.10 VGS = 20V 0.05 o 1 10 o 150 C o 25 C * Notes : 1. VGS = 0V 2. 250µs Pulse Test * Note : TJ = 25 C 0 0.00 0 20 40 60 80 10 100 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] 3000 Coss Ciss 2000 1000 * Note : 1. VGS = 0 V Crss VDS = 50V 10 Crss = Cgd 2. f = 1 MHz VDS = 125V VDS = 200V 8 6 4 2 * Note : ID = 33A 0 0 -1 10 0 10 0 1 10 3 FDP33N25 / FDPF33N25T Rev. B 10 20 30 40 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250 µA 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 16.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 o -50 0 50 100 Figure 9-2. Maximum Safe Operating Area for FDPF33N25T 10 µs 2 10 2 10 10 µs 1 ms DC Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 100 µs 10 10 ms 100 ms 0 10 * Notes : o 1. TC = 25 C 100 µs 1 ms 1 10 10 ms 100 ms Operation in This Area is Limited by R DS(on) DC 0 10 * Notes : o 1. TC = 25 C o 2. TJ = 150 C o 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -1 10 200 TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FDP33N25 1 150 o TJ, Junction Temperature [ C] -1 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 40 ID, Drain Current [A] 30 20 10 0 25 50 75 100 125 150 o TC, Case Temperature [ C] 4 FDP33N25 / FDPF33N25T Rev. B www.fairchildsemi.com FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FDP33N25 ZθJC(t), Thermal Response 10 0 D=0.5 10 0.2 -1 0.1 PDM 0.05 10 t1 t2 0.02 0.01 -2 * Notes : o 1. Z θJC(t) = 0.53 C/W Max. single pulse 2. Duty Factor, D=t1/t2 3. T JM - T C = PDM * Z θJC(t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FDPF33N25T ZθJC(t), Thermal Response D=0.5 10 0 0.2 0.1 0.05 10 -1 PDM t1 0.02 t2 0.01 * Notes : o 1. Z θ JC (t) = 3.4 C/W Max. 2. Duty Factor, D=t1/t 2 10 10 3. T JM - T C = P DM * Z θ JC (t) single pulse -2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1, Square W ave Pulse Duration [sec] 5 FDP33N25 / FDPF33N25T Rev. B www.fairchildsemi.com FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FDP33N25 / FDPF33N25T Rev. B www.fairchildsemi.com FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FDP33N25 / FDPF33N25T Rev. B www.fairchildsemi.com FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters 8 FDP33N25 / FDPF33N25T Rev. B www.fairchildsemi.com FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters Dimensions in Millimeters 9 FDP33N25 / FDPF33N25T Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 10 FDP33N25 / FDPF33N25T Rev. B www.fairchildsemi.com FDP33N25 / FDPF33N25T 250V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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