Fairchild FDPF3N50NZ N-channel unifettm ii mosfetï Datasheet

FDPF3N50NZ
N-Channel UniFETTM II MOSFET
500 V, 3 A, 2.5 
Features
Description
• RDS(on) = 2.1  (Typ.) @ VGS = 10 V, ID = 1.5 A
UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
• Low Gate Charge (Typ. 6.2 nC)
• Low Crss (Typ. 2.5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
G
D
S
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDPF3N50NZ
500
Unit
V
±25
V
- Continuous (TC = 25oC)
3*
1.8*
ID
Drain Current
- Continuous (TC = 100oC)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
3
A
EAR
Repetitive Avalanche Energy
(Note 1)
5.4
mJ
dv/dt
Peak Diode Recovery dv/dt
10
V/ns
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
12*
A
(Note 2)
113
mJ
(Note 3)
(TC = 25oC)
- Derate above 25oC
A
27
W
0.21
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDPF3N50NZ
RJC
Thermal Resistance, Junction to Case, Max.
4.6
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2010 Fairchild Semiconductor Corporation
FDPF3N50NZ Rev. C1
1
Unit
o
C/W
www.fairchildsemi.com
FDPF3N50NZ N-Channel UniFETTM II MOSFET
March 2013
Device Marking
FDPF3N50NZ
Device
FDPF3N50NZ
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
-
0.5
-
V/oC
A
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TC = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
1
VDS = 400V, VGS = 0V,TC = 125oC
-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±25V, VDS = 0V
-
-
±10
ID = 250A, Referenced to
25oC
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 1.5A
-
2.1
2.5

gFS
Forward Transconductance
VDS = 20V, ID = 1.5A
-
1.9
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
210
280
pF
-
30
45
pF
-
2.5
5
pF
-
6.2
9
nC
-
1.4
-
nC
-
3.1
-
nC
-
10
30
ns
-
15
40
ns
-
26
60
ns
-
17
45
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V ID = 3A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 3A
VGS = 10V, RGEN = 25
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
3
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
12
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 3A
-
-
1.4
V
trr
Reverse Recovery Time
-
190
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 3A
dIF/dt = 100A/s
-
0.52
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 3A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 3A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDPF3N50NZ Rev. C1
2
www.fairchildsemi.com
FDPF3N50NZ N-Channel UniFETTM II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
1
ID, Drain Current[A]
ID, Drain Current[A]
10
0.1
o
150 C
o
25 C
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
0.03
0.1
0.1
25
1
10
VDS, Drain-Source Voltage[V]
o
-55 C
1
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3
4
5
6
7
8
VGS, Gate-Source Voltage[V]
9
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
20
5.6
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
10
4.8
4.0
VGS = 10V
3.2
VGS = 20V
2.4
o
150 C
1
*Notes:
1. VGS = 0V
o
1.6
*Note: TC = 25 C
0
2
4
ID, Drain Current [A]
0.1
0.3
6
Figure 5. Capacitance Characteristics
400
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Ciss
200
100
Coss
©2010 Fairchild Semiconductor Corporation
FDPF3N50NZ Rev. C1
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
1
10
VDS, Drain-Source Voltage [V]
1.5
10
300
0
0.1
2. 250s Pulse Test
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
o
25 C
30
3
*Note: ID = 3A
0
2
4
Qg, Total Gate Charge [nC]
6
7
www.fairchildsemi.com
FDPF3N50NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.6
2.4
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250A
0.90
-75 -50
0
50
100
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
2.0
1.6
1.2
0.8
0.4
-75 -50
150
Figure 9. Maximum Safe Operating Area
vs. Case Temperature-FDPF3N50NZ
*Notes:
1. VGS = 10V
2. ID = 1.5A
0
50
100
o
TJ, Junction Temperature [ C]
150
Figure 10. Maximum Drain Current
4
20
30s
10
ID, Drain Current [A]
ID, Drain Current [A]
100s
1ms
1
10ms
Operation in This Area
is Limited by R DS(on)
0.1
DC
*Notes:
o
3
2
1
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
25
0.01
1
10
100
VDS, Drain-Source Voltage [V]
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Unclamped Inductive Switching Capability
IAS, AVALANCHE CURRENT(A)
4
3
TJ = 25oC
2
TJ = 125oC
1
0.01
0.1
1
tAV, TIME IN AVALANCHE(ms)
©2010 Fairchild Semiconductor Corporation
FDPF3N50NZ Rev. C1
4
www.fairchildsemi.com
FDPF3N50NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics (Continued)
FDPF3N50NZ N-Channel UniFETTM II MOSFET
Figure 12. Transient Thermal Response Curve- FDPF3N50NZ
Thermal Response [ZJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
t2
0.01
*Notes:
o
1. ZJC(t) = 4.6 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-5
10
©2010 Fairchild Semiconductor Corporation
FDPF3N50NZ Rev. C1
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
5
10
2
10
www.fairchildsemi.com
FDPF3N50NZ N-Channel UniFETTM II MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDPF3N50NZ Rev. C1
6
www.fairchildsemi.com
FDPF3N50NZ N-Channel UniFETTM II MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FDPF3N50NZ Rev. C1
7
www.fairchildsemi.com
FDPF3N50NZ N-Channel UniFETTM II MOSFET
Mechanical Dimensions
TO-220M03
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation
FDPF3N50NZ Rev. C1
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FDPF3N50NZ Rev. C1
9
www.fairchildsemi.com
FDPF3N50NZ N-Channel UniFETTM II MOSFET
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