TM FDPF44N25 250V N-Channel MOSFET Features Description • 18A, 250V, RDS(on) = 0.069Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 47 nC) • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G TO-220F GD S FDPF Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FDPF44N25 Unit 250 V 18 10.8 A A 72 A ±30 V Single Pulsed Avalanche Energy (Note 2) 2055 mJ Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 5.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 56 0.45 W W/°C -55 to +150 °C 300 °C (Note 1) (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 2.23 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ©2005 Fairchild Semiconductor Corporation FDPF44N25 Rev A 1 www.fairchildsemi.com FDPF44N25 250V N-Channel MOSFET UniFET Device Marking Device Package Reel Size Tape Width Quantity FDPF44N25 FDPF44N25T TO-220F Potting Type -- -- 50 FDPF44N25 FDPF44N25 TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.058 0.069 Ω -- 32 -- S -- 2210 2870 pF -- 450 585 pF -- 60 90 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 9A gFS Forward Transconductance VDS = 40V, ID = 9A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 44A RG = 25Ω (Note 4, 5) VDS = 200V, ID = 44A VGS = 10V (Note 4, 5) -- 53 117 ns -- 402 814 ns -- 85 179 ns -- 112 234 ns -- 47 61 nC -- 18 -- nC -- 24 -- nC 18 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 18A -- -- 1.4 V trr Reverse Recovery Time 195 -- ns Reverse Recovery Charge VGS = 0V, IS = 44A dIF/dt =100A/µs -- Qrr -- 1.8 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10.1mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDPF44N25 Rev A www.fairchildsemi.com FDPF44N25 250V N-Channel MOSFET Package Marking and Ordering Information 10 2 10 1 10 Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] ID, Drain Current [A] Figure 1. On-Region Characteristics 10 2 10 1 o 150 C o 25 C o -55 C 0 ∝ Notes : 1. VDS = 40V 2. 250レs Pulse Test ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ 10 -1 10 0 10 10 1 0 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2 IDR, Reverse Drain Current [A] RDS(ON) [ヘ ], Drain-Source On-Resistance 0.10 0.08 VGS = 10V 0.06 VGS = 20V 0.04 ∝ Note : TJ = 25∩ 10 1 10 150∩ 25∩ ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test 0 0 25 50 75 100 125 10 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 6000 Capacitances [pF] 5000 4000 3000 Coss Ciss 2000 1000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ∝ Note ; 1. VGS = 0 V 2. f = 1 MHz Crss VDS = 50V 10 VDS = 125V VDS = 200V 8 6 4 2 ∝ Note : ID = 44A 0 -1 10 0 0 10 1 10 3 FDPF44N25 Rev A 0 10 20 30 40 50 60 70 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FDPF44N25 250V N-Channel MOSFET Typical Performance Characteristics FDPF44N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∝ Notes : 1. VGS = 0 V 2. ID = 250 レA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ∝ Notes : 1. VGS = 10 V 2. ID = 9 A 0.5 0.0 -100 200 -50 0 50 100 o TJ, Junction Temperature [ C] 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 2 10 1 ms 10 ms 1 10 100 ms Operation in This Area is Limited by R DS(on) 0 10 ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs DC ∝ Notes : -1 10 o 10 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 0 25 2 10 10 50 VDS, Drain-Source Voltage [V] 75 100 125 150 TC, Case Temperature [∩ ] Figure 11. Transient Thermal Response Curve Zヨ JC(t), Thermal Response 10 D = 0 .5 0 0 .2 0 .1 10 ∝ N o te s : 1 . Z ヨ J C( t ) = 2 . 2 3 ∩ / W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z ヨ J C( t ) 0 .0 5 -1 0 .0 2 0 .0 1 PDM t1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 4 FDPF44N25 Rev A www.fairchildsemi.com FDPF44N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDPF44N25 Rev A www.fairchildsemi.com FDPF44N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDPF44N25 Rev A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 7 FDPF44N25 Rev A www.fairchildsemi.com FDPF44N25 250V N-Channel MOSFET TRADEMARKS