FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed. • D D -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V • High density cell design for extremely low RDS(ON). • Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. S S D TM SuperSOT -8 D G D Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA = 25°C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter -20 V VGSS Gate-Source Voltage V ID Drain Current ±8 -6.1 PD Power Dissipation for Single Operation - Continuous (Note 1a) - Pulsed -18 (Note 1a) 1.8 (Note 1b) 1.0 (Note 1c) TJ, Tstg A Operating and Storage Junction Temperature Range W 0.9 -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 70 Thermal Resistance, Junction-to-Case (Note 1) 20 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .836P FDR836P 13’’ 12mm 3000 units ã 1999 Fairchild Semiconductor Corporation FDR836P, Rev. C FDR836P April 1999 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min VGS = 0 V, ID = -250 µA ID= -250 µA, Referenced to 25°C -20 Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA -1 V On Characteristics V -1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 µA, Referenced to 25°C 3 0.022 0.031 0.029 ∆TJ RDS(on) mV/°C -24 -0.4 ID(on) On-State Drain Current VGS = -4.5 V, ID = -6.1 A VGS = -4.5V, ID =-6.1 A,TJ=125°C VGS = -2.5 V, ID = -5 A VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -6.1A -0.6 mV/°C 0.030 0.048 0.040 -9 Ω A 22 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) VDS = -25 V, VGS = 0 V, f = 1.0 MHz 2200 pF 570 pF 140 pF (Note 2) VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 10 18 14 25 ns Turn-Off Delay Time 225 360 ns tf Turn-Off Fall Time 85 135 ns Qg Total Gate Charge 32 44 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, ID = -6.1 A, VGS = - 4.5 V ns 3.2 nC 8.1 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.5 A (Note 2) -0.65 -1.5 A -1.2 V Notes: 1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain Pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a) 70°C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 125°C/W when mounted on a 0.026 in2 pad of 2oz. copper. c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% FDR836P, Rev. C FDR836P Electrical Characteristics FDR836P Typical Characteristics 2 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN-SOURCE CURRENT (A) 20 -2.5V 16 -3.0V -2.0V 12 -1.5V 8 4 1.8 1.6 VGS = -2.0V 1.4 -2.5V 1.2 -3.0V -3.5V -4.0V 1 -4.5V 0.8 0 0 0.5 1 1.5 2 2.5 0 3 4 8 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 -ID, DIRAIN CURRENT (A) ID = -6.1A VGS = -4.5V 1.4 1.2 1 0.8 ID = -3 A 0.08 0.06 o 0.04 TA = 125 C 0.02 o TA = 25 C 0 0.6 -50 -25 0 25 50 75 100 125 1 150 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -ID, DRAIN CURRENT (A) o o 25 C TA = -55 C VDS = -5V -IS, REVERSE DRAIN CURRENT (A) 20 o 125 C 16 12 8 4 VGS = 0V 10 1 o TA = 125 C 0.1 o 25 C o -55 C 0.01 0.001 0.0001 0 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR836P, Rev. C (continued) 4000 5 ID = -6.1A VDS = -5V f = 1 MHz VGS = 0 V -10V 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) FDR836P Typical Characteristics 3 2 1 3000 CISS 2000 1000 COSS 0 CRSS 0 0 5 10 15 20 25 30 35 40 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 SINGLE PULSE 10 0.1 o TA=25 C POWER (W) 1s 10s DC VGS= -4.5V SINGLE PULSE RθJA=135 C/W 40 10ms 100ms 1 30 20 o RθJA = 135 C/W 10 o TA = 25 C 0.01 0 0.1 1 10 100 0.0001 0.001 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE 1 r(t), NORMALIZED EFFECTIVE -ID, DRAIN CURRENT (A) o 100µs 1ms RDS(ON) LIMIT 0.5 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 135°C/W 0.3 0.2 0.1 0.2 0.1 P(pk) 0.05 t1 0.05 0.03 0.02 0.01 0.0001 0.02 t2 TJ - TA = P * R θJA (t) 0.01 Duty Cycle, D = t 1/ t 2 Single Pulse 0.001 0.01 0.1 1 10 100 300 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDR836P, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d. Static Dissi pat ive Emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no f l ow c ode ) TNR D84Z SSOT-8 Unit Orientation TNR 3,000 500 13" D ia 7" Dia 343x64x343 184x187x47 Max qty per Box 6,000 1,000 Weight per unit (gm) 0.0416 0.0416 Weight per Reel (kg) 0.5615 0.0980 343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons Note/Comments F63TNR Label F63TNR Label F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0 LOT: CBVK741B019 QTY: 3000 FSID: FDR835N SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets August 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SSOT-8 (12mm) 4.47 +/-0.10 5.00 +/-0.10 W 12.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.50 +/-0.10 1.75 +/-0.10 F 10.25 mi n 5.50 +/-0.05 P1 P0 8.0 +/-0.1 4.0 +/-0.1 K0 T Wc 1.37 +/-0.10 0.280 +/-0.150 9.5 +/-0.025 Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C). 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Si de or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SSOT-8 Reel Configuration: Figur e 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 12mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 12mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 1998 Fairchild Semiconductor Corporation July 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SuperSOT-8 (FS PKG Code 34, 35) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D