Fairchild FDS4070N7 40v n-channel powertrench mosfet Datasheet

FDS4070N7
40V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 15.3 A, 40 V. RDS(ON) = 7 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
Applications
• Fast switching, low gate charge
• Synchronous rectifier
• FLMP SO-8 package: Enhanced thermal
• DC/DC converter
performance in industry-standard package size
5
Absolute Maximum Ratings
Symbol
Bottom-side
Drain Contact
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
40
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
15.3
A
– Continuous
(Note 1a)
– Pulsed
60
3.0
W
–55 to +150
°C
(Note 1a)
40
°C/W
(Note 1)
0.5
PD
Maximum Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4070N7
FDS4070N7
13’’
12mm
2500 units
2002 Fairchild Semiconductor Corporation
FDS4070N7 Rev B1 (W)
FDS4070N7
May 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
Units
310
mJ
15.3
A
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy
IAS
Drain-Source Avalanche Current
Single Pulse, VDD=40V, ID=15.3A
Off Characteristics
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 µA
VGS = 0 V,
ID = 250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 32 V,
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
BVDSS
∆BVDSS
∆TJ
IDSS
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
40
V
mV/°C
42
1
µA
VGS = 20 V, VDS = 0 V
100
nA
VGS = –20 V, VDS = 0 V
–100
nA
VGS = 0 V
(Note 2)
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25 °C
2
3.9
–8
5
5
7.5
7
11
V
ID(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
VGS = 10 V, ID = 15.3 A
VGS = 10 V, ID=15.3A, TJ =125°C
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 15.3 A
52
S
VDS = 20 V,
f = 1.0 MHz
V GS = 0 V,
2819
pF
600
pF
291
pF
mV/°C
30
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
VDD = 20 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
41
66
ns
tf
Turn–Off Fall Time
29
46
ns
47
67
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 20 V,
VGS = 10 V
ID = 15.3 A,
16
29
ns
12
22
ns
nC
15
nC
14
nC
FDS4070N7 Rev B1 (W)
FDS4070N7
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
Units
2.5
A
1.2
V
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
IS = 2.5 A
VGS = 0 V,
Voltage
Diode Reverse Recovery Time
IF = 15.3 A,
diF/dt = 100 A/µs
Diode Reverse Recovery Charge
0.7
(Note 2)
32
nS
39
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
40°C/W when
mounted on a 1in2 pad
of 2 oz copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size pape
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0
FDS4070N7 Rev B1 (W)
FDS4070N7
Electrical Characteristics
FDS4070N7
Typical Characteristics
60
ID, DRAIN CURRENT (A)
3
6.0V
5.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
50
7.0V
40
5.0V
30
20
4.5V
10
VGS = 5.0V
2.6
2.2
1.8
5.5V
6.0V
1.4
7.0V
10V
1
0.6
0
0
0.25
0.5
0.75
1
1.25
0
1.5
10
20
Figure 1. On-Region Characteristics.
50
60
0.015
ID = 7.7A
ID = 15.3A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
0.013
0.011
TA = 125oC
0.009
0.007
TA = 25oC
0.005
0.003
150
4
5
o
TJ, JUNCTION TEMPERATURE ( C)
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
50
ID, DRAIN CURRENT (A)
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
40
30
TA =125oC
20
25oC
10
-55oC
3
3.5
4
4.5
5
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2.5
VGS = 0V
10
5.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4070N7 Rev B1 (W)
FDS4070N7
Typical Characteristics
4000
ID = 15.3
VDS = 10V
20V
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
30V
6
4
3000
2000
COSS
1000
2
CRSS
0
0
0
10
20
30
40
0
50
10
20
Figure 7. Gate Charge Characteristics.
40
Figure 8. Capacitance Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
50
100
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10
10s
DC
1
VGS = 10V
SINGLE PULSE
RθJA = 85oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
SINGLE PULSE
RθJA = 85°C/W
TA = 25°C
40
30
20
10
0
0.01
100
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0 V
CISS
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 85 °C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS4070N7 Rev B1 (W)
FDS4070N7
Dimensional Outline and Pad Layout
FDS4070N7 Rev B1 (W)
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
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