Fairchild FDS4672A 40v n-channel powertrench mosfet Datasheet

FDS4672A
40V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 11 A, 40 V.
• High performance trench technology for extremely
low RDS(ON)
Applications
• Low gate charge (35 nC typical)
• DC/DC converter
• High power and current handling capability
D
D
RDS(ON) = 13 mΩ @ VGS = 4.5 V
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
40
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
(Note 1a)
11
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.4
(Note 1c)
1.2
– Continuous
– Pulsed
TJ, TSTG
50
W
–55 to +175
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4672A
FDS4672A
13’’
12mm
2500 units
2001 Fairchild Semiconductor Corporation
FDS4672A Rev C(W)
FDS4672A
May 2001
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
VGS = 0 V, ID = 250 µA
40
V
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V, VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V VDS = 0 V
–100
nA
2.0
V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
ID = 250 µA, Referenced to 25°C
37
mV/°C
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
ID(on)
On–State Drain Current
VGS = 4.5 V, ID = 11 A
VGS=4.5 V, ID =11A, TJ=125°C
VGS = 4.5 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V, ID = 11 A
0.8
1.2
–4
10
15
mV/°C
13
21
50
mΩ
A
65
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
VDS = 20 V, V GS = 0 V,
f = 1.0 MHz
4766
pF
346
pF
155
pF
(Note 2)
VDD = 20 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
17
31
ns
9
18
ns
Turn–Off Delay Time
43
68
ns
Turn–Off Fall Time
14
25
ns
35
49
nC
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 20 V, ID = 11 A,
VGS = 4.5 V
7.8
nC
8.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
Voltage
(Note 2)
0.7
2.1
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4672A Rev C(W)
FDS4672A
Electrical Characteristics
FDS4672A
Typical Characteristics
50
1.6
VGS = 4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
ID, DRAIN CURRENT (A)
3.5V
40
3.0V
30
20
2.0V
10
0
0
0.5
1
1.5
1.4
VGS = 2.5V
1.2
3.0V
3.5V
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
0.03
ID = 11A
VGS = 4.5V
1.8
ID = 5.5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.8
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.026
0.022
TA = 125oC
0.018
0.014
TA = 25oC
0.01
0.006
-50
-25
0
25
50
75
100
125
150
175
1.5
2
2.5
TJ, JUNCTION TEMPERATURE (oC)
3
3.5
4
4.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
70
25oC
IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
VDS = 5V
60
ID, DRAIN CURRENT (A)
4.0V
1
o
125 C
50
40
30
20
10
0
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4672A Rev C(W)
FDS4672A
Typical Characteristics
7000
ID = 11A
VDS = 10V
f = 1 MHz
VGS = 0 V
20V
4
5600
30V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
3
2
1
CISS
4200
2800
1400
COSS
CRSS
0
0
0
10
20
30
40
0
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
40
50
P(pk), PEAK TRANSIENT POWER (W)
100µs
ID, DRAIN CURRENT (A)
30
Figure 8. Capacitance Characteristics.
100
1ms
10ms
100ms
1s
RDS(ON) LIMIT
10
10s
1
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 125oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
100
0.01
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
0.1
o
RθJA = 125 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4672A Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
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