FDS4935 Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). • –7 A, –30 V Applications • Fast switching speed • Power management • High performance trench technology for extremely low RDS(ON) RDS(ON) = 23 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V • Low gate charge (15nC typical) • Load switch • Battery protection • High power and current handling capability DD1 DD1 D2 D 5 DD2 6 4 3 Q1 7 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G 1 S Absolute Maximum Ratings Symbol 8 S 2 Q2 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –30 V VGSS Gate-Source Voltage ±25 V ID Drain Current –7 A – Continuous (Note 1a) – Pulsed PD Power Dissipation for Dual Operation PD Power Dissipation for Single Operation –30 2 (Note 1a) 1.6 (Note 1b) 1 (Note 1c) TJ, TSTG W 0.9 –55 to +175 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4935 FDS4935 13’’ 12mm 2500 units 2003 Fairchild Semiconductor Corporation FDS4935 Rev B(W) FDS4935 June 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA –30 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 0 V –1 µA IGSSF IGSSR Gate–Body Leakage, Forward Gate–Body Leakage, Reverse VGS = –25 V, VGS = 25 V, VDS = 0 V VDS = 0 V –100 100 nA nA –3 V On Characteristics –24 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 4.4 VGS = –10 V, ID = –7 A ID = –5.5 A VGS = –4.5 V, VGS= –10 V, ID = –7 A, TJ=125°C 19 28 26 ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –7 A 19 VDS = –15 V, f = 1.0 MHz V GS = 0 V, 1233 pF 311 pF 152 pF –1 –1.6 mV/°C 23 35 34 mΩ –30 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 13 23 ns 10 20 ns ns td(off) Turn–Off Delay Time 48 77 tf Turn–Off Fall Time 25 40 ns Qg Total Gate Charge 15 21 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –15 V, VGS = –5 V ID = –7 A, 4.4 nC 4.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage (Note 2) –0.75 –2.1 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS4935 Rev B(W) FDS4935 Electrical Characteristics FDS4935 Typical Characteristics 50 VGS = -10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 2.4 -5.0V -4.5V -6.0V 40 -4.0V 30 -3.5V 20 -3.0V 10 0 2.2 VGS = -3.5V 2 1.8 -4.0V 1.6 -4.5V -5.0V 1.4 -6.0V 1.2 -10V 1 0.8 0 1 2 3 4 5 0 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 50 0.08 ID = -7A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.6 ID = -3.5A 0.06 0.04 TA = 125oC 0.02 TA = 25oC 0 -50 -25 0 25 50 75 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 TA = -55oC -IS, REVERSE DRAIN CURRENT (A) 100 VDS = -5.0V -ID, DRAIN CURRENT (A) 30 -ID, DRAIN CURRENT (A) 25oC 40 125oC 30 20 10 0 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4935 Rev B(W) FDS4935 Typical Characteristics 2000 VDS = -5V ID = -8.8A f = 1 MHz VGS = 0 V 1800 -10V 8 1600 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -15V 6 4 1400 CISS 1200 1000 2 800 600 400 COSS 200 0 CRSS 0 0 4 8 12 16 20 24 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 25 30 50 P(pk), PEAK TRANSIENT POWER (W) 100µs RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 1ms 10ms 10 100ms 1s 10s 1 DC VGS = -10V SINGLE PULSE RθJA = 135oC/W 0.1 TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 135 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4935 Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2