FDS5170N7 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. • 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V Applications • High power and current handling capability • Synchronous rectifier • Fast switching, low gate charge (51nC typical) RDS(ON) = 15 mΩ @ VGS = 6.0 V • High performance trench technology for extremely low RDS(ON) • DC/DC converter • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size 5 Absolute Maximum Ratings Symbol Bottom-side Drain Contact 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 60 V VGSS Gate-Source Voltage ± 20 V ID Drain Current 10.6 A – Continuous (Note 1a) – Pulsed 50 3.0 W –55 to +150 °C (Note 1a) 40 °C/W (Note 1) 0.5 PD Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range (Note 1a) Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS5170N7 FDS5170N7 13’’ 12mm 2500 units 2002 Fairchild Semiconductor Corporation FDS5170N7 Rev C1(W) FDS5170N7 May 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 30 V, ID= 10.6 A 300 mJ 10.6 A Off Characteristics ∆BVDSS ∆TJ Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage. VGS = ± 20 V, VDS = 0 V ±100 nA BVDSS On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) VGS = 0 V, ID = 250 µA 60 ID = 250 µA, Referenced to 25°C V 60 mV/°C (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 10.6 A ID = 10.1 A ID = 10.6 A,TJ = 125°C VDS = 10 V 2 2.3 –7 4 9 11 16 12 15 23 V mV/°C ID(on) On–State Drain Current VGS = 10 V, VGS = 6.0V, VGS = 10 V, VGS = 10 V, gFS Forward Transconductance VDS = 10 V, ID = 10.6 A 43 S VDS = 30 V, f = 1.0 MHz V GS = 0 V, 2889 pF 329 pF 134 pF Ω mΩ 25 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time VGS = 15 mV, f = 1.0 MHz 1.1 VDD = 30 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 12 22 ns 10 20 ns (Note 2) td(off) Turn–Off Delay Time 43 69 ns tf Turn–Off Fall Time 25 40 ns 51 71 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 30 V, VGS = 10 V ID = 10.6 A, nC 10 nC 11 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward IS = 2.5 A(Note 2) VGS = 0 V, Voltage Diode Reverse Recovery Time IF = 10.6 A (Note 2) Diode Reverse Recovery Charge diF/dt = 100 A/µs 0.7 2.5 A 1.2 V 39 nS 83 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS5170N7 Rev C1(W) FDS5170N7 Electrical Characteristics FDS5170N7 Dimensional Outline and Pad Layout FDS5170N7 Rev C1(W) FDS5170N7 Typical Characteristics 50 ID, DRAIN CURRENT (A) 2.2 VGS = 10V 6.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 4.0V 40 30 20 3.5V 10 2 VGS = 4.0V 1.8 1.6 4.5V 1.4 5.0V 1.2 6.0V 10V 1 0.8 0 0 1 2 0 3 10 20 40 50 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.04 ID = 10.6A VGS = 10V 1.8 1.6 1.4 1.2 1 0.8 0.6 60 ID = 5.3A 0.03 TA = 125oC 0.02 0.01 TA = 25oC 0 0.4 -50 -25 0 25 50 75 100 125 3 150 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 30 ID, DRAIN CURRENT (A) RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VDS, DRAIN-SOURCE VOLTAGE (V) 40 30 TA =125oC 20 25oC 10 -55oC 0 10 TA = 125oC 1 0.1 25oC 0.01 -55oC 0.001 0.0001 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS5170N7 Rev C1(W) FDS5170N7 Typical Characteristics 4000 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 10.6A 30V VDS = 20V CAPACITANCE (pF) 40V 6 4 2400 1600 2 800 0 0 0 10 20 30 40 50 COSS CRSS 0 60 10 Figure 7. Gate Charge Characteristics. 40 50 60 50 P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms 10ms 100ms RDS(ON) LIMIT 1s 10s DC 1 VGS = 10V SINGLE PULSE RθJA = 85oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 85°C/W TA = 25°C 40 30 20 10 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 30 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 f = 1MHz VGS = 0 V CISS 3200 8 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 85 °C/W 0.2 0.1 0.1 P(pk) 0.05 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design. FDS5170N7 Rev C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2