Fairchild FDS6984AS Dual notebook power supply n-channel powertrench syncfet Datasheet

May 2008
FDS6984AS
Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6984AS is designed to replace two single
SO-8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6984AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency.
•
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky diode
8.5A, 30V
RDS(on) max= 20 mΩ @ VGS = 10V
RDS(on) max= 28 mΩ @ VGS = 4.5V
•
Q1:
Optimized for low switching losses
Low gate charge (8nC typical)
RDS(on) max= 31 mΩ @ VGS = 10V
5.5A, 30V
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction
losses. Q2 also includes a patented combination of a
MOSFET monolithically integrated with a Schottky
diode.
RDS(on) max= 40 mΩ @ VGS = 4.5V
•
RoHS Compliant
D1
D1
4
5
D2
Q1
6
D2
3
2
7
SO-8
S2
G2
S1
G1
Absolute Maximum Ratings
Symbol
8
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
PD
Q2
(Note 1a)
Q1
Units
V
V
30
30
±20
±20
8.5
30
5.5
20
A
2
1.6
1
0.9
W
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
1
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
Q2
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6984AS
FDS6984AS
13”
12mm
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6984AS Rev A1(X)
FDS6984AS
J
TA = 25°C unless otherwise noted
Symbol
Test Conditions
Parameter
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 µA
Q2
Q1
IDSS
Zero Gate Voltage Drain
Current
VDS = 24 V, VGS = 0 V
Q2
Q1
Q2
2.3
Q1
79
VDS = 24 V, VGS = 0 V, TJ = 125°C
IGSS
Gate-Body Leakage
On Characteristics
VGS = ±20 V, VDS = 0 V
All
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 10 V, ID = 8.5 A
VGS = 10 V, ID = 8.5 A, TJ = 125°C
VGS = 4.5 V, ID = 7 A
VGS = 10 V, ID = 5.5 A
VGS = 10 V, ID = 5.5 A, TJ = 125°C
VGS = 4.5 V, ID = 4.6 A
VGS = 10 V, VDS = 5 V
Q2
Q1
Q2
Q1
Q2
30
30
V
500
1
µA
mA
nA
±100
nA
3
3
V
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = 5 V, ID = 8.5 A
VDS = 5 V, ID = 5.5 A
1
1
Q1
Q2
Q1
Q2
Q1
1.7
1.8
–3
–4
17
24
21
26
34
32
30
20
mV/°C
20
32
28
31
43
40
mΩ
A
25
18
S
530
420
170
120
60
50
3.1
2.2
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15mV, f = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
pF
pF
Ω
FDS6984AS Rev A1 (X)
FDS6984AS
Electrical Characteristics
Symbol
(continued)
Parameter
Switching Characteristics
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
(Note 2)
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg(TOT)
Total Gate Charge, Vgs = 10V
Qg
Total Gate Charge, Vgs = 5V
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
VDD = 15 V, ID = 1 A,
VGS = 4.5V, RGEN = 6 Ω
Q2:
VDS = 15 V, ID = 8.5 A
Q1:
VDS = 15 V, ID = 5.5 A
8
9
5
6
23
22
4
2
9
10
7
11
13
13
4
3
10
8
5
4
1.5
1.3
1.9
1.5
16
18
10
12
37
35
8
4
18
19
14
20
24
24
8
6
14
11
8
6
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
VSD
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
IF = 10A,
dIF/dt = 300 A/µs
Q2
Q1
Q2
3.0
1.3
13
ns
6
Q1
17
nC
ns
Q2
Q1
6
0.6
0.8
(Note 3)
IF = 5.5A,
dIF/dt = 100 A/µs
(Note 3)
VGS = 0 V, IS = 2.3 A
VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
0.7
1.2
A
nC
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. See “SyncFET Schottky body diode characteristics” below.
3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6984AS Rev A 1(X)
FDS6984AS
Electrical Characteristics
FDS6984AS
Typical Characteristics: Q2
2
30
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
25
VGS = 3.0V
3.5V
4.0V
6.0V
4.5V
20
3.0V
15
10
5
2.5V
0
1.8
1.6
3.5V
1.4
4.0V
5.0V
6.0V
10V
1
0.8
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0
Figure 1. On-Region Characteristics.
10
15
20
ID, DRAIN CURRENT (A)
25
30
0.06
ID = 8.5A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
ID = 4.25A
1.45
1.3
1.15
1
0.85
0.7
0.05
0.04
TA = 125oC
0.03
0.02
TA = 25oC
0.01
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
25
ID, DRAIN CURRENT (A)
5
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
1.2
20
15
o
o
TA = 125 C
-55 C
10
25oC
5
0
10
1
TA = 125oC
o
25 C
0.1
-55oC
0.01
0.001
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6984AS Rev A1 (X)
800
f = 1MHz
VGS = 0 V
ID =8.5A
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
600
Ciss
400
Coss
200
2
Crss
0
0
0
2
4
6
8
Qg, GATE CHARGE (nC)
10
12
0
Figure 7. Gate Charge Characteristics.
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
100
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
100µs
ID, DRAIN CURRENT (A)
5
1ms
10
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
o
RθJA = 135 C/W
0.1
TA = 25oC
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
100
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS6984AS Rev A1 (X)
FDS6984AS
Typical Characteristics: Q2
FDS6984AS
Typical Characteristics Q1
2.4
20
6.0V
16
ID, DRAIN CURRENT (A)
4.0V
VGS = 3.0V
4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
3.5V
12
8
3.0V
4
2.5V
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
1.6
3.5V
1.4
4.0V
4.5V
5.0V
1.2
6.0V
10V
1
0
5
10
ID, DRAIN CURRENT (A)
15
20
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
1.6
ID = 5.5A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
3
Figure 11. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = 2.75A
0.08
0.06
TA = 125oC
0.04
o
TA = 25 C
0.02
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
2
Figure 13. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
16
ID, DRAIN CURRENT (A)
2
0.8
0
0
2.2
12
8
o
TA = 125 C
-55oC
4
10
1
TA = 125oC
0.1
o
25 C
0.01
-55oC
0.001
25oC
0.0001
0
0.5
1.5
2.5
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
4.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6984AS Rev A1 (X)
FDS6984AS
Typical Characteristics Q1
600
f = 1MHz
VGS = 0 V
ID = 5.5A
500
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
2
400
300
Coss
200
100
Crss
0
0
0
2
4
6
Qg, GATE CHARGE (nC)
8
0
10
Figure 17. Gate Charge Characteristics.
5
10
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 18. Capacitance Characteristics.
50
RDS(ON) LIMIT
10
10ms
P(pk), PEAK TRANSIENT POWER (W)
100
100µs
1ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
0.1
o
TA = 25 C
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 19. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
Ciss
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 135°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6984AS Rev A1 (X)
FDS6984AS
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
3A/DIV
IDSS, REVERSE LEAKAGE CURRENT (A)
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 22
shows the reverse recovery characteristic of the
FDS6984AS.
0.01
125oC
0.001
100oC
0.0001
0.00001
25oC
0.000001
0
10
20
VDS, REVERSE VOLTAGE (V)
30
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
Figure 22. FDS6984AS SyncFET body
diode reverse recovery characteristic.
3A/DIV
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6984A).
0V
10nS/DIV
Figure 23. Non-SyncFET (FDS6984A) body
diode reverse recovery characteristic.
FDS6984AS Rev A1 (X)
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™
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FACT®
FAST®
FastvCore™
FlashWriter® *
®
PDP-SPM™
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QS™
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
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WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2.
A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDS6984AS Rev.A1(X)
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