FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. • -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V • Fast switching speed. • High density cell design for extremely low RDS(on). • High power and current handling capability. Applications • • • Load switch DC/DC converter Battery protection D D 5 4 6 3 7 2 8 1 D D SO-8 S S S G Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter FDS8433A Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage V ID Drain Current ±8 -5 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation TJ, Tstg A -50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1 Operating and Storage Junction Temperature Range W -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS8433A FDS8433A 13’’ 12mm 2500 units 2000 Fairchild Semiconductor International FDS8433A Rev. C FDS8433A September 2000 Symbol Parameter Off Characteristics TA = 25°C unless otherwise noted Test Conditions Min VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C -20 Typ Max Units V BVDSS Drain-Source Breakdown Voltage BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA -1 V On Characteristics mV/°C -25 -1 (Note 2) VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = -4.5 V, ID = -5 A VGS = -4.5 V, ID = -5 A, TJ=125°C VGS = -2.5 V, ID = -4.3 A VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -5 A -0.4 -0.6 mV/°C 4 0.036 0.050 0.047 0.047 0.085 0.070 -25 16 Ω Ω Ω A S Dynamic Characteristics VDS = -10 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 1130 pF 480 pF 120 pF (Note 2) VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 8 16 ns 23 37 ns Turn-Off Delay Time 260 360 ns Turn-Off Fall Time 90 125 ns 20 28 nC VDS = -5 V, ID = -5 A, VGS = -5 V, 2.8 nC 3.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) -0.8 -2.1 A -1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125° C/W on a minimum mounting pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDS8433A Rev. C FDS8433A DMOS Electrical Characteristics FDS8433A Typical Characteristics 2 VGS = -4.5V -3.5V 40 30 R DS(on) , NORMALIZ ED -3.0V -2.5V 20 -2.0V 10 -1.5V DRAIN-SOURCE ON-RESISTANCE - I D , DRAIN-SOURCE CURRENT (A) 50 1.8 VGS = -2 .0 V 1.6 -2 .5 V 1.4 -3 .0 V 1 0.8 0 0 1 2 3 4 -3 .5 V -4 .0 V -4 .5 V 1.2 5 0 10 20 Figure 1. On-Region Characteristics. 1.4 R D S(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 0.15 ID = -5A VGS = -4.5V 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 ID = -2.5A 0.12 0.09 0.03 0 150 TJ = 1 25° C 0.06 25° C 1 2 - IS , REVERSE DRAIN CURRENT (A) 25°C 1 25° C 6 4 2 0.8 1.2 5 10 TJ = -55° C 8 4 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V 3 -VGS , GATE TO SOURCE VOLT AG E (V) Figure 3. On-Resistance Variation with Temperature. - ID , DRAIN CURRENT (A) 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0 0.4 30 - I D , DRAIN CURRENT (A) -VDS , DRAIN-SOURCE VOLTAGE (V) 1.6 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 VGS= 0V 3 1 TJ =1 25°C 25°C -55°C 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 -VS D , BODY DIODE F ORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8433A Rev. C (continued) 5 3000 -VGS , GATE-SOURCE VOLTAGE (V) I D =-5.0A 2000 VDS = -5V 4 Ciss 1000 CAPACITANCE (pF) -10V -15V 3 2 200 Crss 100 0 4 8 12 Q g , GATE CHARGE (nC) 16 f = 1 MHz V GS = 0 V 50 0.1 20 Figure 7. Gate-Charge Characteristics. 0.2 0.5 1 2 5 -V DS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 8. Capacitance Characteristics. 100 50 100 IT LIM N) S(O RD 10 1m s V GS = -4.5V SINGLE PULSE R θJA = 125°C/W T A = 25°C 0.1 0.01 0.1 0.2 40 10m s 10 0m s 1s 10s DC 1 SINGLE PULSE R θJA=125°C/W TA = 25°C us POWER (W) -ID, DRAIN CURRENT (A) Coss 500 1 0 FDS8433A Typical Characteristics 30 20 10 0.5 1 2 5 10 -VDS , DRAIN-SOURCE VOLTAGE (V) 20 0 0.001 50 Figure 9. Maximum Safe Operating Area. 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 0.2 R θJA (t) = r(t) * R θJA RθJA =125°C/W 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse 0.005 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design. FDS8433A Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1