FDS8817NZ N-Channel PowerTrench® tm MOSFET 30V, 15A, 7.0mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A HBM ESD protection level of 3.8kV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant D D D D G SO-8 S D G D S D S D S S Pin 1 S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous Ratings 30 Units V ±20 V (Note 1a) 15 -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG A 60 (Note 4) 181 Power Dissipation (Note 1a) 2.5 Power Dissipation (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Note 1) 25 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 125 °C/W Package Marking and Ordering Information Device Marking FDS8817NZ ©2007 Fairchild Semiconductor Corporation FDS8817NZ Rev.C Device FDS8817NZ Reel Size 13” 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET March 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 V ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±10 μA 3 V mV/°C 20 On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C –6 VGS = 10V, ID = 15A 5.4 7 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 12.6A 7.0 10 7.5 11 VGS = 10V, ID = 15A gFS Forward Transconductance 1 TJ = 125°C VDS = 5V, ID = 15A 1.8 mV/°C 54 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz 1805 2400 pF 335 445 pF 200 300 pF Ω f = 1MHz 1.4 11 22 ns VDD = 15V, ID = 15A VGS = 10V, RGEN = 6Ω 13 26 ns 25 40 ns 7 14 ns 32 45 nC 17 24 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 5V Qgs Gate to Source Charge 6 nC Qgd Gate to Drain “Miller” Charge 7 nC VDD = 15V ID = 15A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.1A (Note 2) IF = 15A, di/dt = 100A/μs 0.8 1.2 V 24 36 ns 15 23 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%. 3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V. FDS8817NZ Rev.C 2 www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted ID, DRAIN CURRENT (A) VGS = 10.0V VGS = 4.5V 45 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = 4.0V VGS = 3.5V 30 15 VGS = 3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5 VGS = 3.0V 4 VGS = 3.5V 3 VGS = 4.0V 2 VGS = 4.5V 1 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 45 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 26 1.8 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics ID = 15A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID =7.5A 22 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 18 14 TJ = 125oC 10 6 TJ = 25oC 2 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 3 150 Figure 3. Normalized On- Resistance vs Junction Temperature 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) VGS = 10.0V 0 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 50 VDD = 5V 40 30 20 TJ = 150oC TJ = 25oC 10 TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 Figure 5. Transfer Characteristics FDS8817NZ Rev.C VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 ID = 15A 8 Ciss VDD = 10V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V VDD =20V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 0 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 100 0.1 35 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 1E-3 Ig, GATE LEAKAGE CURRENT(A) IAS, AVALANCHE CURRENT(A) 20 10 TJ = 25oC TJ = 125oC 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 400 VGS = 0V 1E-4 TJ = 150oC 1E-5 1E-6 1E-7 1E-9 5 10 15 20 25 VGS, GATE TO SOURCE VOLTAGE(V) 100 ID, DRAIN CURRENT (A) 12 VGS = 10V 9 VGS = 4.5V 3 rDS(on) LIMITED 10 10ms 100ms 1 SINGLE PULSE TJ = MAX RATED RθJA = 125oC/W TA = 25oC 0.1 o 1s 10s DC RθJA = 50 C/W 0.01 0.01 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature FDS8817NZ Rev.C 30 Figure 10. Gate Leakage Current vs Gate to Source Voltage 15 6 TJ = 25oC 1E-8 0 Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 VGS = 10V FOR TEMPERATURES NORMALIZED THERMAL IMPEDANCE, ZθJA ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 I = I25 150 – T A -----------------------125 TA = 25oC 10 SINGLE PULSE o RθJA = 125 C/W 1 -2 10 -1 10 0 1 10 2 10 3 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o Rthja = 125 C/W 0.001 -2 10 -1 10 0 1 10 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve FDS8817NZ Rev.C 5 www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® ™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC® UniFET™ VCX™ Wire™ tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Definition Rev. I24 ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench® MOSFET tm