FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A HBM ESD protection level > 3.5 kV (Note 3) Application DC-DC Conversion RoHS Compliant BLU and motor drive inverter D2 D2 Q2 D1 D1 G2 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 Q1 S2 G1 S1 Pin 1 SO-8 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID Q1 30 - Continuous TA = 25 °C - Pulsed Q2 -30 Units V ±20 ±25 V 6.4 -4.5 30 -30 Power Dissipation for Dual Operation PD A 2.0 Power Dissipation for Single Operation EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range TA = 25 °C (Note 1a) 1.6 TA = 25 °C (Note 1b) 0.9 (Note 4) 18 W 5 -55 to +150 mJ °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 40 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking FDS8958B Device FDS8958B ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B Package SO-8 1 Reel Size 13 ” Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET December 2008 Symbol Parameter Test Conditions Type Min 30 -30 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ID = -250 µA, VGS = 0 V Q1 Q2 ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V Q1 Q2 1 -1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V VGS = ±25 V, VDS = 0 V Q1 Q2 ±100 ±10 nA µA 3.0 -3.0 V V 24 -21 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA VGS = VDS, ID = -250 µA Q1 Q2 ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C ID = -250 µA, referenced to 25 °C Q1 Q2 -6 5 VGS = 10 V, ID = 6.4 A VGS = 4.5 V, ID = 5.2 A VGS = 10 V, ID = 6.4A, TJ = 125 °C Q1 21 29 31 26 39 39 VGS = -10 V, ID = -4.5 A VGS = -4.5 V, ID = -3.3 A VGS = -10 V, ID = -4.5 A, TJ = 125 °C Q2 38 60 53 51 80 72 VDD = 5 V, ID = 6.4 A VDD = -5 V, ID = -4.5 A Q1 Q2 20 10 Q1 VDS = 15 V, VGS = 0 V, f = 1 MHZ Q1 Q2 405 570 540 760 pF Q1 Q2 75 115 100 155 pF Q1 Q2 55 100 80 150 pF Q1 Q2 2.4 4.4 Q1 Q2 4.3 6.0 10 12 ns Q1 Q2 2.0 6.0 10 12 ns Q2 VDD = -15 V, ID = -4.5 A, VGS = -10 V, RGEN = 6 Ω Q1 Q2 12 17 22 30 ns Q1 Q2 2.0 7.0 10 14 ns Q1 Q2 8.3 14 12 19 nC Q1 Q2 4.1 7.0 5.8 9.6 nC Q1 Q2 1.3 1.9 nC Q1 Q2 1.7 3.6 nC rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.0 -1.0 2.0 -1.9 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q2 VDS = -15 V, VGS = 0 V, f = 1 MHZ Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 10 V VGS = -10 V Qg(TOT) Total Gate Charge VGS = 4.5 V VGS = -4.5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B Q1 VDD = 15 V, ID = 6.4 A, VGS = 10 V, RGEN = 6 Ω Q1 VDD = 15 V, ID = 6.4 A Q2 VDD = -15 V, ID = -4.5 A 2 www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.8 -0.8 1.2 -1.2 V Q1 Q2 17 20 30 36 ns Q1 Q2 6 8 12 16 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A (Note 2) (Note 2) Q1 IF = 6.4 A, di/dt = 100 A/µs Q2 IF = -4.5 A, di/dt = 100 A/µs NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 135 °C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. UIL condition: Starting TJ = 25 °C, L = 1 mH, IAS = 6 A, VDD = 27 V, VGS = 10 V . (Q1) Starting TJ = 25 °C, L = 1 mH, IAS = -4 A, VDD = -27 V, VGS = -10 V. (Q2) ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B 3 www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 3.0 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V 24 VGS = 4.5 V VGS = 4 V 18 12 VGS = 3.5 V 6 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 2.5 VGS = 3.5 V VGS = 4 V 2.5 VGS = 4.5 V 2.0 1.5 VGS = 6 V 1.0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.5 0 3.0 6 Figure 1. On Region Characteristics 18 24 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 75 ID = 6.4 A VGS = 10 V 1.6 rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 60 ID = 3.2 A 45 TJ = 125 oC 30 TJ = 25 oC 15 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 30 IS, REVERSE DRAIN CURRENT (A) 30 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 25 ID, DRAIN CURRENT (A) VGS = 10 V VDS = 5 V 20 15 10 TJ = 125 oC TJ = 25 oC 5 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC TJ = -55 oC 0 1 2 3 4 5 0.01 0.2 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 1000 ID = 6.4 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 2 4 6 8 10 1 Qg, GATE CHARGE (nC) 30 Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics 100 9 8 7 6 5 THIS AREA IS LIMITED BY rDS(on) 4 TJ ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) = 25 oC 3 2 TJ = 125 oC 10 0.1 ms 1 ms 1 10 ms 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 135 oC/W 10 s DC TA = 25 oC 1 0.001 0.01 0.1 1 10 0.01 0.01 100 tAV, TIME IN AVALANCHE (ms) 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 500 VGS = 10 V 100 SINGLE PULSE o RθJA = 135 C/W o TA = 25 C 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B 5 www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B 6 www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted 30 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.5 VGS = -10 V VGS = -6 V 24 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 18 VGS = -4.5 V 12 VGS = -4 V 6 VGS = -3.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS = -3.5 V 4.0 VGS = -4 V 3.5 VGS = -4.5 V 3.0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5%MAX 2.5 2.0 VGS = -6 V 1.5 1.0 VGS = -10 V 0.5 0 3.0 6 1.6 24 30 200 ID = -4.5 A VGS = -10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 18 Figure 16. Normalized on-Resistance vs Drain Current and Gate Voltage Figure 15. On- Region Characteristics PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 160 ID = -2.3 A 120 80 TJ = 125 oC 40 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 18. On-Resistance vs Gate to Source Voltage Figure 17. Normalized On-Resistance vs Junction Temperature 30 -IS , REVERSE DRAIN CURRENT (A) 30 -ID , DRAIN CURRENT (A) 12 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 25 TJ = -55 oC VDS = -5 V 20 TJ = 25 oC TJ = 125 oC 15 10 5 2 3 4 5 6 TJ = 25 oC 0.1 TJ = -55 oC 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 20. Source to Drain Diode Forward Voltage vs Source Current Figure 19. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B TJ = 125 oC 0.01 0.2 0 1 VGS = 0 V 10 7 www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) 10 2000 ID = -4.5 A 1000 8 CAPACITANCE (pF) VDD = -10 V 6 VDD = -15 V 4 VDD = -20 V Ciss Coss 100 2 Crss f = 1 MHz VGS = 0 V 0 0 3 6 9 12 30 0.1 15 1 Qg, GATE CHARGE (nC) 10 4 TJ -Ig, GATE LEAKAGE CURRENT(A) -IAS, AVALANCHE CURRENT (A) -2 8 7 6 5 = 25 oC 3 2 TJ = 125 oC VGS = 0V -3 10 -4 10 -5 10 TJ = 125oC -6 10 -7 10 TJ = 25oC -8 10 -9 1 0.01 10 0.1 1 10 0 5 tAV, TIME IN AVALANCHE (ms) 10 15 20 25 30 35 -VGS, GATE TO SOURCE VOLTAGE(V) Figure 23. Unclamped Inductive Switching Capability Figure 24. Ig vs Vgs 100 200 P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 30 Figure 22. Capacitance vs Drain to Source Voltage Figure 21. Gate Charge Characteristics 10 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY rDS(on) 0.1 ms 1 ms 1 10 ms 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 135 oC/W 10 s DC TA = 25 oC 0.01 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 135 oC/W TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 25. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B VGS = -10 V 100 Figure 26. Single Pulse Maximum Power Dissipation 8 www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.002 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 27. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B 9 www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2008 Fairchild Semiconductor Corporation FDS8958B Rev.B 10 www.fairchildsemi.com FDS8958B Dual N & P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.