Fairchild FDS9934C Complementary Datasheet

FDS9934C
Complementary
Features
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
• Q1: 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 43 mΩ @ VGS = 2.5 V.
• Q2: –5 A, –20 V, RDS(ON) = 55 mΩ @ VGS = –4.5 V
RDS(ON) = 90 mΩ @ VGS = –2.5 V
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
DD2
D1
D
5
DD2
DD1
Q2
4
6
3
Q1
G2
S2 G
SO-8
Pin 1 SO-8
G1
S1 S
S
7
2
8
1
S
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Parameter
Q1
Units
Q2
Drain-Source Voltage
20
–20
V
VGSS
Gate-Source Voltage
±10
±12
V
ID
Drain Current
6.5
–5
A
20
–30
VDSS
– Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ, TSTG
2
(Note 1a)
(Note 1b)
1
(Note 1c)
0.9
Operating and Storage Junction Temperature Range
W
1.6
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDS9934C
2006 Fairchild Semiconductor Corporation
Device
Reel Size
Tape width
Quantity
FDS9934C
13’’
12mm
2500 units
FDS9934C Rev D(W)
FDS9934C
March 2006
TA = 25°C unless otherwise noted
Symbol
Test Conditions
Parameter
Type Min
Typ Max Units
Off Characteristics
BVDSS
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 16V,
VGS = 0 V
VDS = –16V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
VGS = ±12 V, VDS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
20
–20
IGSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
Q1
Q2
Q1
Q2
Q1
0.6
–0.6
∆VGS(th)
?
∆TJ
RDS(on)
VDS = VGS,
ID = 250 µA
VDS = VGS,
ID = 250 µA
ID = 250 uA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 4.5 V, ID = 6.5 A
VGS = 2.5 V, ID = 5.4 A
VGS = 4.5 V, ID =6.5A, TJ=125°C
VGS = –4.5 V, ID = –3.2 A
VGS = –2.5 V, ID = –1.0 A
VGS = –4.5 V,ID = –3.2 A, TJ=125°C
VGS = 4.5V, VDS = 5 V
VGS = –4.5 V, VDS = – 5 V
VDS = –5 V, ID = 6.5 A
VDS = 5 V,
ID = – 5.5 A
∆BVDSS
∆TJ
IDSS
ID(on)
On-State Drain Current
gFS
Forward Transcoductance
14
–14
mV/°C
1
–1
±100
±100
Q2
Q1
Q2
Q1
Q2
V
1
–0.9
–3
3
25
35
35
43
64
55
15
–16
1.5
–1.2
µA
nA
V
mV/°C
30
43
50
55
90
76
mΩ
mΩ
A
22
14
S
S
650
955
150
215
85
115
1.4
4.9
pF
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Q1
VDS = 10V,
VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Q2
Reverse Transfer Capacitance VDS = –10 V, VGS = 0 V,
f = 1.0 MHz
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
pF
pF
Ω
FDS9934C Rev D(W)
FDS9934C
Electrical Characteristics
Symbol
(continued)
Parameter
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ
Max Units
(Note 2)
Q1
VDD = 10 V, ID = 1 A,
VGS = 4.5V, RGEN = 6Ω
Q2
VDD = –6V, ID = –1A,
VGS = –4.5V, RGEN = 6Ω
Q1
VDS = 10 V, ID = 3 A, VGS = 4.5V
Q2
VDS = –6 V, ID = –3.2 A,VGS = –4.5 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
16
9
9
15
25
4
9
6.2
8.7
1.2
2.1
1.7
2.1
16
29
17
18
26
41
9
19
9
12
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
trr
Qrr
VGS = 0 V,
VGS = 0 V,
Q1
IF = 6.5 A,
Q2
IF = -3.2 A,
IS = 1.3 A
IS = -2.0 A
(Note 2)
(Note 2)
diF/dt = 100 A/µs
diF/dt = 100 A/µs
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.73
–0.8
15
20
5
7
1.3
–1.3
1.2
–1.2
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS9934C Rev D(W)
FDS9934C
Electrical Characteristics
FDS9934C
Typical Characteristics: Q1 (N-Channel)
20
2.4
VGS = 4.5V
VGS = 2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
ID, DRAIN CURRENT (A)
16
3.5
3.0V
12
8
2.0V
4
0
0.5
1
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.8
1.6
2.5V
1.4
3.0V
1.2
3.5V
4.0V
4.5V
1
2
0
Figure 1. On-Region Characteristics.
5
10
ID, DIRAIN CURRENT (A)
15
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.11
1.6
ID = 6.5A
VGS = 4.5V
ID = 3.25A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
0.8
0
1.4
1.2
1
0.8
0.6
0.09
0.07
o
TA = 125 C
0.05
0.03
TA = 25oC
0.01
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
1
150
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
o
TA = -55 C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
o
125 C
ID, DRAIN CURRENT (A)
2.2
15
25oC
10
5
VGS = 0V
10
o
TA = 125 C
1
25oC
0.1
o
-55 C
0.01
0.001
0.0001
0
0
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9934C Rev D(W)
FDS9934C
Typical Characteristics: Q1 (N-Channel)
1000
VDS = 5V
ID = 3 A
f = 1 MHz
VGS = 0 V
15V
800
4
10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
3
2
600
Ciss
400
Coss
1
200
0
0
Crss
0
1
2
3
4
5
6
7
8
0
5
10
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
100
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10
10s
DC
1
0.1
20
VGS = 4.5V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
100
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS9934C Rev D(W)
FDS9934C
Typical Characteristics: Q2 (P-Channel)
1.8
30
-4.0V
V
20
VGS=-2.5V
-3.5V
V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -4.5V
-3.0V
-2.5V
10
-2.0V
0
1.6
1.4
-3.0V
-3.5V
1.2
-4.0V
-4.5V
1
0.8
0
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
5
0
6
12
18
-ID, DRAIN CURRENT (A)
24
30
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
0.14
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -2.5A
ID = -5A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.1
0.08
o
TA = 125 C
0.06
TA = 25oC
0.04
0.02
0.8
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
0
150
Figure 13. On-Resistance Variation with
Temperature.
2
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
VGS =0V
o
125 C
-IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
VDS = -5V
25
-ID, DRAIN CURRENT (A)
0.12
25oC
20
15
10
5
10
1
o
TA = 125 C
0.1
25oC
0.01
-55oC
0.001
0.0001
0
0
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
5
0
0.4
0.8
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9934C Rev D(W)
FDS9934C
Typical Characteristics: Q2 (P-Channel)
1600
ID = -5A
VDS = -4V
f = 1 MHz
VGS = 0 V
-8V
4
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
-6V
3
2
1200
Ciss
800
Coss
400
1
Crss
0
0
0
2
4
6
Qg, GATE CHARGE (nC)
8
10
0
Figure 17. Gate Charge Characteristics.
20
Figure 18. Capacitance Characteristics.
50
P(pk), PEAK TRANSIENT POWER (W)
100
100µs
RDS(ON) LIMIT
1ms
10ms
10
100ms
1s
10s
1
DC
VGS = -4.5V
SINGLE PULSE
RθJA = 135oC/W
0.1
o
TA = 25 C
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 19. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
-ID, DRAIN CURRENT (A)
4
8
12
16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
RθJA = 135 C/W
0.1
o
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9934C Rev D(W)
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18