Fairchild FDT434 P-channel 2.5v specified powertrench mosfet Datasheet

FDT434P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
• –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V
RDS(ON) = 0.070 Ω @ VGS = –2.5 V.
• Low gate charge (13nC typical)
• High performance trench technology for extremely
low RDS(ON) .
Applications
• Low Dropout Regulator
• High power and current handling capability in a
widely used surface mount package.
• DC/DC converter
• Load switch
• Motor driving
D
D
D
D
S
S
D
SOT-223
G
G
D
SOT-223 *
G
G
S
(J23Z)
Absolute Maximum Ratings
Symbol
S
o
TA=25 C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–6
A
– Continuous
(Note 1a)
– Pulsed
PD
–30
Power Dissipation for Single Operation
(Note 1a)
3
(Note 1b)
1.3
(Note 1c)
TJ, Tstg
W
1.1
-55 to +150
°C
(Note 1a)
42
°C/W
(Note 1)
12
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
434
FDT434P
13’’
12mm
2500 units
1999 Fairchild Semiconductor Corporation
FDT434P Rev. C1 (W)
FDT434P
January 2000
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
–28
mV/°C
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA,Referenced to 25°C
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage Current,
Forward
Gate–Body Leakage Current,
Reverse
VGS = 8 V,
VDS = 0 V
100
nA
VGS = –8 V
VDS = 0 V
–100
nA
IGSSR
On Characteristics
–20
V
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA,Referenced to 25°C
ID(on)
On–State Drain Current
VGS = –2.5 V,
VGS = –4.5 V,
ID = –6 A
ID = –6 A
TJ=125°C
ID = –4 A
VDS = –5 V
gFS
Forward Transconductance
VDS = –10 V,
ID = –6 A
6.5
S
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1240
pF
270
pF
100
pF
VGS = –4.5 V,
VGS = –4.5 V,
–0.4
–0.6
–1
2
V
mV/°C
0.040
0.067
0.050
0.083
0.050
0.070
–20
Ω
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –5 V,
VGS = –4.5 V,
8
16
ns
15
25
ns
Turn–Off Delay Time
45
65
ns
Turn–Off Fall Time
30
50
ns
13
19
nC
VDS = –10 V,
VGS = –4.5 V
ID = –1 A,
RGEN = 6 Ω
ID = –6 A,
1.8
nC
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –2.1 A
(Note 2)
–0.75
–1.3
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 42°C/W when
2
mounted on a 1in
pad of 2 oz copper
b) 95°/W when mounted
2
on a .0066 in pad of
2 oz copper
c) 110°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDT434P Rev. C1 (W)
FDT434P
Electrical Characteristics
FDT434P
Typical Characteristics
1.8
20
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = - 4.5V
-3. 0V
- 2.5V
16
12
8
- 2. 0V
4
D
-1. 5V
1.6
VGS = -2.5V
1.4
-3.0V
1.2
-3.5V
-4.0V
-4.5V
1
I
0
DRAI
0
1
2
3
4
- DS, DRAIN- SOURCE VOLTAGE ( V)
V
0.8
5
Figure 1. On-Region Characteristics.
10
- I D, DRAIN CURRENT (A)
15
20
I D = -6 A
1
0.8
ID = - 6 A
VGS = - 4.5V
1.4
1.2
TA =125°C
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
R R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
Figure 3. On-Resistance Variation
withTemperature.
15
12
- I S, REVERSE DRAIN CURRENT (A)
VDS = -5V
TJ = -55°C
25°C
125°C
9
6
3
0
0.9
25°C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
- I D, DRAIN CURRENT (A)
0
1.2
1.5
1.8
2.1
2.4
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.7
VGS = 0V
TJ = 125°C
1
25°C
-55°C
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDT434P Rev. C1 (W)
FDT434P
Typical Characteristics
5
2500
I D = -6.0A
V D S= - 5V
-1 0V
-1 5V
4
1000
3
400
2
200
GS
0
3
GA
6
9
Q g , GATE CHARGE (nC)
12
15
100
50
0.1
Figure 7. Gate Charge Characteristics.
0.3
-V
1
3
, DRAIN TO SOURCE VOLTAGE (V)
100
20
200
SINGLE PULSE
100µs
-I D, DRAIN CURRENT (A)
10
Figure 8. Capacitance Characteristics.
10
o
10ms
RDS(ON) LIMIT
R θJA = 110 C/W
160
o
100ms
T A = 25 C
1s
10s
POWER (W)
V
0
CAPACITANCE( F
1
DC
1
VGS= -4.5V
SINGLE PULSE
RθJA= 42oC/W
0.1
120
80
40
TA= 25oC
0
0.01
0.1
1
10
0.0001
100
0.001
0.01
-VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 110 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - T A = P * RθJA(t)
Duty Cycle, D = t 1 / t2
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDT434P Rev. C1 (W)
SOT-223 Tape and Reel Data and Package Dimensions
SOT-223 Packaging
Configuration: Figure 1.0
Customized Label
Packaging Description:
F63TNR Label
Antistatic Cover Tape
SOT-223 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F852
014
F852
014
F852
014
F852
014
SOT-223 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Standard
(no flow code)
TNR
2,500
D84Z
SOT-223 Unit Orientation
TNR
500
13" Dia
7" Dia
343x64x343
184x187x47
Max qty per Box
5,000
1,000
Weight per unit (gm)
0.1246
0.1246
Weight per Reel (kg)
0.7250
0.1532
343mm x 342mm x 64mm
Intermediate box for Standard
F63TNR Label
Note/Comments
F63TNR Label
F63TNR Label sample
184mm x 184mm x 47mm
Pizza Box for D84Z Option
SOT-223 Tape Leader and Trailer
Configuration: Figure 2.0
LOT: CBVK741B019
QTY: 3000
FSID: PN2222A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Components
Trailer Tape
300mm minimum or
38 empty pockets
Leader Tape
500mm minimum or
62 empty pockets
September 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOT-223
(12mm)
A0
6.83
+/-0.10
B0
7.42
+/-0.10
W
12.0
+/-0.3
D0
D1
1.55
+/-0.05
1.50
+/-0.10
E1
E2
1.75
+/-0.10
F
10.25
min
P1
5.50
+/-0.05
P0
8.0
+/-0.1
4.0
+/-0.1
K0
1.88
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.292
+/0.0130
9.5
+/-0.025
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOT-223 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 (FS PKG Code 47)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench 
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
SyncFET™
TinyLogic™
UHC™
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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