Fairchild FDW6923 P-channel 2.5v specified powertrenchí mosfet with schottky diode Datasheet

FDW6923
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
General Description
Features
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
• –3.5 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V
RDS(ON) = 0.075 Ω @ VGS = –2.5 V
• VF < 0.55 V @ 1 A
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC conversion
• Low profile TSSOP-8 package
A
A
A
C
G
S
S
D
TSSOP-8
5
4
6
3
7
2
8
1
Pin 1
MOSFET Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
VDSS
Drain-Source Voltage
Ratings
–20
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
A
PD
– Pulsed
MOSFET Power Dissipation (minimum pad) (Note 1)
Schottky Power Dissipation (minimum pad)
(Note 1)
Operating and Storage Junction Temperature Range
–3.5
–30
TJ, TSTG
Parameter
– Continuous
(Note 1)
1.2
1.0
-55 to +150
Units
V
W
°C
Schottky Maximum Ratings
VRRM
Repetitive Peak Reverse Voltage
20
V
IF
Average Forward Current
1.5
A
IFM
Peak Forward Current
30
A
MOSFET: 115
Schottky: 130
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(minimum pad)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
6923
FDW6923
13’’
16mm
2008 Fairchild Semiconductor International
Quantity
2500 units
FDW6923 Rev. D1(W)
FDW6923
July 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to25°C
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = –12 V,
VDS = 0 V
–100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = 12 V,
VDS = 0 V
100
nA
–1.5
V
On Characteristics
–20
V
–16
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to25°C
ID(on)
On–State Drain Current
VGS = –4.5 V, ID = –3.5 A
VGS = –2.5 V, ID = –2.7 A
VGS=–4.5 V, ID =–3.5A, TJ=125°C
VGS = –4.5 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –3.5A
13.2
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1030
pF
280
pF
120
pF
–0.6
–1.0
3
36
56
49
mV/°C
45
75
72
–15
mΩ
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
(Note 2)
VDD = –5 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
11
20
ns
18
32
ns
td(off)
Turn–Off Delay Time
34
55
ns
tf
Turn–Off Fall Time
34
55
ns
Qg
Total Gate Charge
9.7
16
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –5V,
VGS = –4.5 V
ID = –3.5 A,
2.2
nC
2.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
Gate–Body Leakage, Reverse
IGSSR
VGS = 0 V,
VGS = 12 V,
IS = –1.25 A
(Note 2)
–0.6
VDS = 0 V
–1.25
A
–1.2
V
100
nA
Schottky Diode Characteristics
IR
VF
CT
Reverse Leakage
Forward Voltage
Junction Capacitance
VR = 20V
IF = 1A
TJ=25°C
0.6
50
µA
TJ=125°C
1
8
mA
TJ=25°C
0.48
0.55
V
TJ=125°C
0.42
0.50
VR = 10V
50
V
pF
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
RθJA is 115 °C/W for the MOSFET and 130°C/W for the Schottky Diode when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW6923 Rev. D1 (W)
FDW6923
Electrical Characteristics
FDW6923
Typical Characteristics
1.6
30
VGS = -4.5V
-4.0V
24
-3.5V
-3.0V
VGS = -2.5V
1.4
18
-3.0V
1.2
-2.5V
12
-3.5V
-2.0V
6
-4.0V
1
0
-4.5V
0.8
0
1
2
3
4
5
0
5
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
15
20
25
30
- ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.15
ID = -3.5A
VGS = -4.5V
ID = -1.7A
1.4
0.12
1.2
0.09
1
0.06
0.8
0.03
o
TA = 125 C
o
TA = 25 C
0
0.6
-50
-25
0
25
50
75
100
125
150
1.5
2
2.5
o
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
VGS = 0V
o
TA = -55 C
VDS = -5V
o
25 C
10
24
o
o
125 C
TA = 125 C
1
18
o
25 C
0.1
o
-55 C
12
0.01
6
0.001
0.0001
0
0.4
1.3
2.2
3.1
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW6923 Rev. D1(W)
FDW6923
Typical Characteristics
1800
5
ID = -3.5A
VDS = -5V
f = 1MHz
VGS = 0 V
1500
-10V
4
-15V
1200
CISS
3
900
2
600
COSS
1
300
CRSS
0
0
0
3
6
9
0
12
5
10
Figure 7. Gate Charge Characteristics.
20
Figure 8. Capacitance Characteristics.
10
0.01
TJ = 125o C
0.001
1
IR , REVERSE CURRENT (A
IF, FORWARD CURRENT (A)
15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
o
TJ = 100 C
0 .1
o
TJ = 25 C
0 .0 1
0.0001
0.00001
TJ = 25 o C
0.000001
0.0000001
0.00000001
0 .0 0 1
0
0 .2
0 .4
0 .6
0 .8
1
0
1 .2
5
10
15
20
V F, F O R W AR D V O LT AG E (V )
V R , REV ERSE V OLTA GE (V )
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
R θJA(t) = r(t) + R θ JA
R θ JA = 135 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
T J - T A = P * R θ JA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDW6923 Rev. D1 (W)
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Rev. I35
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