FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. • – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.5 V Applications • ESD protection diode (note 3) • Li-Ion Battery Pack • RoHS Compliant 1S G G 1 3 D S Absolute Maximum Ratings Symbol D 2 TA=25oC unless otherwise noted Parameter Ratings Unit s VDSS Drain-Source Voltage – 20 V VGSS Gate-Source Voltage V ID Drain Current ±8 – 350 – 1000 PD Power Dissipation (Steady State) – Continuous – Pulsed (Note 1a) 1a) (Note 1a) 1a) (Note 1b) 1b) TJ, TSTG Operating and Storage Junction Temperature Range mA 625 446 –55 to +150 mW °C/W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) 200 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1b) 280 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity A FDY100PZ 7’’ 8mm 3000 units 2006 Fairchild Semiconductor Corporation FDY100PZ Rev A www.fairchildsemi.com FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench MOSFET January 2006 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min ID = – 250 µA – 20 Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, On Characteristics VGS = 0 V, 15 ID = – 250 µA, Referenced to 25°C VDS = – 16 V, VGS = ± 8 V, V VGS = 0 V VDS = 0 V mV/°C –3 ± 10 µA µA –1.0 –3 – 1.5 V mV/°C VGS = – 4.5 V, ID = – 350 mA VGS = – 2.5 V, ID = – 300 mA VGS = – 1.8 V, ID = – 150 mA VGS = – 4.5 V, ID = – 350 mA, TJ =125°C VDS = – 5 V, ID = – 350 mA 0.5 0.8 1.3 0.7 1.2 1.6 2.7 1.6 Ω VDS = – 10 V, f = 1.0 MHz 100 pF 30 pF 15 pF (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance ID = – 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C – 0.65 1 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge V GS = 0 V, (Note 2) VDD = – 10 V, ID = – 0.5 A, VGS = – 4.5 V, RGEN = 6 Ω VDS = – 10 V, ID = – 350 mA, VGS = – 4.5 V 6 12 ns 13 23 ns 8 16 ns 1 2 ns 1.0 1.4 nC 0.2 nC 0.3 nC Drain–Source Diode Characteristics and Maximum Ratings VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = – 150 m A(Note 2) IF = – 350 mA, dIF/dt = 100 A/µs –0.8 – 1.2 V 11 ns 2 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' s board design. a) 200°C/W when mounted on a 1in2 pad of 2 oz copper b) 280°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDY100PZ Rev A www.fairchildsemi.com FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench MOSFET Electrical Characteristics 1 2.6 0.8 -2.5V V -4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS= -4.5V -3.0V 0.6 -2.0V 0.4 -1.8V 0.2 0 0.5 1 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) -2.0V 1.8 -2.5V 1.4 -3.0V -3.5V 1 0 2 Figure 1. On-Region Characteristics. -4.0V -4.5V 0.2 0.4 0.6 -ID, DRAIN CURRENT (A) 0.8 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 2 ID = -0.35A VGS = -4.5V ID = -0.175A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 0.6 0 1.4 1.2 1 0.8 0.6 1.75 1.5 1.25 1 TA = 125oC 0.75 TA = 25oC 0.5 0.25 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 1 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) VGS=-1.8V 0.8 0.6 0.4 TA = 125oC -55oC 0.2 25oC 0 VGS = 0V 0.1 0.01 TA = 125oC 25oC 0.001 -55oC 0.0001 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. FDY100PZ Rev A 2.5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.fairchildsemi.com FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench MOSFET Typical Characteristics 10 150 -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.35A f = 1 MHz VGS = 0 V 125 8 CAPACITANCE (pF) VDS = -5V -15V 6 -10V 4 100 2 Ciss 75 Coss 50 25 Crss 0 0 0 0.5 1 1.5 Qg, GATE CHARGE (nC) 2 2.5 0 Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 12 10 100µs RDS(ON) LIMIT 0.1 10s DC VGS = -4.5V SINGLE PULSE RθJA = 280oC/W 1ms 10ms 100ms 1s TA = 25oC 0.01 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 280°C/W TA = 25°C 8 6 4 2 0 0.0001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 4 6 8 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 10 1 2 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =280 °C/W 0.2 0.1 P(pk) 0.1 t1 0.05 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY100PZ Rev A www.fairchildsemi.com FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench MOSFET Typical Characteristics 1.70 1.50 0.50 0.35 0.25 0.50 3 1.70 1.50 0.98 0.78 1 1.80 1.14 2 (0.15) 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 0.43 0.28 0.20 0.04 SEE DETAIL A 0.54 0.34 0.10 0.00 DETAIL A SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY100PZ Rev A www.fairchildsemi.com FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench MOSFET Dimensional Outline and Pad Layout TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18