FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 5.3 A, 39 mΩ Features General Description Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ192NZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 49 mΩ at VGS = 1.8 V, ID = 1.0 A Max rDS(on) = 55 mΩ at VGS = 1.5 V, ID = 1.0 A Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of 2 x 2 BGA Applications Ultra-thin package: less than 0.65 mm height when mounted to PCB Battery management Load switch HBM ESD protection level > 2200V (Note3) Battery protection RoHS Compliant PIN1 S S G S D D TOP BOTTOM WL-CSP 1x1.5 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID TA = 25°C (Note 1a) -Pulsed PD TJ, TSTG Ratings 20 Units V ±8 V 5.3 15 Power Dissipation TA = 25°C (Note 1a) 1.9 Power Dissipation TA = 25°C (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 65 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 133 °C/W Package Marking and Ordering Information Device Marking 8 Device FDZ192NZ ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 Package WL-CSP 1x1.5 Thin 1 Reel Size 7” Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET January 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 µA 1.0 V 20 V 10 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 0.4 0.7 -3 mV/°C VGS = 4.5 V, ID = 2.0 A 26 39 VGS = 2.5 V, ID = 2.0 A 29 43 VGS = 1.8 V, ID = 1.0 A 33 49 VGS = 1.5 V, ID = 1.0 A 38 55 VGS = 4.5 V, ID = 2.0 A, TJ =125 °C 31 47 VDS = 5 V, ID = 5.3 A 36 VDS = 10 V, VGS = 0 V, f = 1 MHz 915 1220 pF 145 195 pF 100 150 pF 6.5 13 ns 4 10 ns 50 80 ns 20 32 ns 12 17 nC mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 10 V, ID = 5.3 A, VGS = 4.5 V, RGEN = 6 Ω VGS = 0 V to 4.5 V VDD = 10 V, ID = 5.3 A 1.3 nC 2.3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.1 A (Note 2) IF = 5.3 A, di/dt = 100 A/µs 0.6 1.2 V 18 32 ns 4.6 10 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 133 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 2 www.fairchildsemi.com FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 2.5 15 ID, DRAIN CURRENT (A) VGS = 3 V 12 VGS = 2.5 V 9 VGS = 1.8 V 6 VGS = 1.5 V 3 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 0.8 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V 2.0 VGS =1.5 V VGS = 1.8 V 1.5 1.0 0.5 1.0 0 3 Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 12 VDS = 5 V 9 TJ = 150 oC 6 TJ = 25 oC 3 TJ = -55 oC 1.2 1.4 TJ = 125 oC 40 20 TJ = 25 oC 20 10 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS = 0 V 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 1.6 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 ID = 2 A 60 Figure 4. On-Resistance vs Gate to Source Voltage 15 1.0 80 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 15 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0.8 12 100 ID = 2 A VGS = 4.5 V 0 0.6 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 -50 6 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 0.6 -75 VGS = 4.5 V VGS = 3 V VGS = 2.5 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 Ciss ID = 5.3 A 1000 3.6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 VDD = 8 V 2.7 VDD = 10 V 1.8 VDD = 12 V 0.9 Coss f = 1 MHz 100 VGS = 0 V 50 0.01 0.0 0 3 6 9 12 15 Figure 7. Gate Charge Characteristics 10 20 1 Figure 8. Capacitance vs Drain to Source Voltage 20 -1 10 10 VDS = 0 V -2 10 ID, DRAIN CURRENT (A) Ig, GATE LEAKAGE CURRENT (A) 0.1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -3 10 -4 10 TJ = 125 oC -5 10 -6 10 -7 10 1 ms 1 0.1 3 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 133 oC/W TA = 25 oC 0.01 0.1 -9 0 10 ms THIS AREA IS LIMITED BY rDS(on) TJ = 25 oC -8 10 10 Crss 6 9 12 15 1 10 50 VDS, DRAIN to SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 10. Forward Bias Safe Operating Area Figure 9. Gate Leakage Current vs Gate to Source Voltage 100 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE o RθJA = 133 C/W o TA = 25 C 10 1 -3 10 -2 10 -1 10 1 10 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 4 www.fairchildsemi.com FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 133 C/W 0.01 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 5 www.fairchildsemi.com FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I46 ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 7 www.fairchildsemi.com FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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