FDZ2554PZ Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554PZ minimizes both PCB space and RDS(ON). This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). • –6.5 A, –20 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 45 mΩ @ VGS = –2.5 V • >4800V ESD Protection • Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 • Ultra-thin package: less than 0.80 mm height when mounted to PCB Applications • Outstanding thermal transfer characteristics: significantly better than SO-8 • Battery management • Ultra-low Qg x RDS(ON) figure-of-merit • Load switch • High power and current handling capability • Battery protection D D S S S G S S S S S G S S D D D S Pin 1 G Q2 F2554 Pin 1 D Q1 Top Absolute Maximum Ratings Symbol PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) Package Marking and Ordering Information Device Marking 2554Z 2004 Fairchild Semiconductor Corporation Q2 Device FDZ2554PZ S TA=25oC unless otherwise noted Thermal Characteristics RθJA RθJB RθJC D G Bottom VDSS VGSS ID Q1 Reel Size 7’’ Ratings –20 ±12 –6.5 –20 2.1 –55 to +150 60 6.3 0.6 Tape width 12mm Units V V A W °C °C/W Quantity 3000 units FDZ2554PZ Rev. C3 (W) FDZ2554PZ August 2004 Symbol Parameter Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage On Characteristics VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = ±12 V, Min Typ Max –20 V mV/°C –13 VGS = 0 V VDS = 0 V Units –1 ±10 µA µA –0.8 3 –1.5 V mV/°C 21 36 30 24 28 45 43 mΩ (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C –0.6 VGS = –4.5 V, ID = –6.5 A VGS = –2.5 V, ID = –5 A VGS = –4.5 V, ID = –6.5 A, TJ=125°C VDS = –5 V, ID = –6.5 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics 1430 pF 320 pF 170 pF 9.2 Ω VDS = –10 V, f = 1.0 MHz V GS = 0 V, VGS = 15 mV, f = 1.0 MHz VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 15 26 ns 9 18 ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 60 100 ns tf Turn–Off Fall Time 37 60 ns 15 21 nC Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –4.5 V ID = –6.5 A, 3 nC 4 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: 1. Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V,IS = –1.75 A Voltage Reverse Recovery Time IF = –6.5 A, diF/dt = 100 A/µs Reverse Recovery Charge –0.7 (Note 2) –1.75 –1.2 A V 25 ns 10 nC RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' s board design. a) 60°C/W when mounted on a 1in2 pad of 2 oz copper b) 108°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ2554P Rev C3 (W) FDZ2554PZ Electrical Characteristics FDZ2554PZ Dimensional Outline and Pad Layout FDZ2554P Rev C3 (W) FDZ2554PZ Typical Characteristics 1.8 VGS = - 4.5V -3.0V -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 -2.5V 15 -2.0V 10 5 0 1.6 VGS = -2.5V 1.4 -3.0V 1.2 -3.5V -4.0V 0.8 0 0.5 1 1.5 0 2 5 Figure 1. On-Region Characteristics. 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.09 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) ID = -6.5A VGS = -4.5V 1.3 1.2 1.1 1 0.9 ID = -3.2A 0.07 0.05 o TA = 125 C 0.03 o TA = 25 C 0.01 0.8 -50 -25 0 25 50 75 100 125 150 1.5 2 o TJ, JUNCTION TEMPERATURE ( C) 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 -IS, REVERSE DRAIN CURRENT (A) 100 VDS = -5V -ID, DRAIN CURRENT (A) -4.5V 1 15 10 TA = 125oC 25oC 5 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 -55oC 0.0001 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ2554P Rev C3 (W) FDZ2554PZ Typical Characteristics 2000 ID = -6.5A f = 1MHz VGS = 0 V VDS = -5V 4 1600 -10V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 1 Ciss 1200 800 Coss 400 Crss 0 0 4 8 12 0 16 0 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 20 Figure 8. Capacitance Characteristics. 100 1ms 10ms 10 100ms 10s DC 1 1s VGS = -4.5V SINGLE PULSE RθJA = 108oC/W 0.1 TA = 25oC 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 108°C/W TA = 25°C 40 30 20 10 0 0.01 100 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 5 10 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 108 °C/W 0.2 0.1 0.1 0.05 P(pk) t1 0.02 0.01 0.01 SINGLE PULSE 0.001 0.001 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 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Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11