Fairchild FDZ293P P-channel 2.5 v specified powertrenchâ® bga mosfet Datasheet

FDZ293P
P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Features
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ293P minimizes both PCB space
and rDS(on).
This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on).
• –4.6 A, –20 V
rDS(on) = 46 mΩ @ VGS = –4.5 V
rDS(on) = 72 mΩ @ VGS = –2.5 V
• Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.85 mm height when
mounted to PCB
Applications
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Battery management
• Load switch
• Battery protection
• Ultra-low Qg x rDS(on) figure-of-merit
• High power and current handling capability.
S
G AT E
G
D
Top
Bottom
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDS
Drain-Source Voltage
–20
V
VGS
Gate-Source Voltage
±12
V
ID
Drain Current
–4.6
A
– Continuous
(Note 1a)
– Pulsed
–10
Power Dissipation for Single Operation
PD
TJ, TSTG
1.7
W
–55 to +150
°C
(Note 1a)
72
°C/W
(Note 1)
2
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
B
FDZ293P
13”
8mm
10000 units
2005 Fairchild Semiconductor Corporation
FDZ293P Rev. D (W)
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Feb 2006
Symbol
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage.
BVDSS
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
VGS = 0 V,
ID = –250 µA
–20
ID = –250 µA, Referenced to 25°C
V
–13
mV/°C
VDS = –16 V,
VGS = 0 V
–1
µA
VGS = ±12 V,
VDS = 0 V
±100
nA
(Note 2)
VDS = VGS,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
–0.6
VGS = –4.5 V,
ID = –4.6 A,
VGS = –2.5 V,
ID = –3.6A,
VGS = –4.5 V, ID = –4.6 A, TJ=125°C
–0.8
3
–1.5
36
58
47
46
72
65
V
mV/°C
mΩ
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –4.6 A
–10
13
S
A
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
754
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
Turn–Off Delay Time
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
167
pF
92
pF
Ω
VGS = 15 mV,
f = 1.0 MHz
6
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
11
20
ns
10
20
ns
22
35
ns
17
31
ns
7.5
11
nC
(Note 2)
VDS = –10V,
VGS = –4.5 V
ID = –4.6 A,
1.5
nC
2.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –1.4 A
Voltage
Diode Reverse Recovery Time
IF = –4.6 A,
Diode Reverse Recovery Charge diF/dt = 100 A/µs
VSD
trr
Qrr
–0.7
(Note 2)
–1.4
A
–1.2
V
17
5
nS
nC
Notes:
1.
RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user'
s board design.
a)
2.
72°C/W when
2
mounted on a 1in pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
157°C/W when mounted
on a minimum pad of 2 oz
copper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ293P Rev. D (W)
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Electrical Characteristics T
2.6
VGS = -4.5V
-3.0V
-3.5V
8
-2.5V
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
10
-2.0V
6
4
2
2.4
VGS = -2.0V
2.2
2
1.8
1.6
-2.5V
1.4
-3.0V
-3.5V
1.2
-4.5V
1
0.8
0
0
0.5
1
0
1.5
2
Figure 1. On-Region Characteristics.
8
0.18
ID = -4.6A
VGS = -4.5V
1.4
ID = -2.3 A
rDS(on), ON-RESISTANCE (OHM)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.3
1.2
1.1
1
0.9
0.8
0.15
0.12
0.09
TA = 125oC
0.06
TA = 25oC
0.7
-50
-25
0
25
50
75
100
125
0.03
150
1.5
TJ, JUNCTION TEMPERATURE (oC)
2
2.5
3
3.5
4
4.5
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
-IS, REVERSE DRAIN CURRENT (A)
8
6
4
o
25 C
o
TA = 125 C
2
o
-55 C
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
-VGS, GATE TO SOURCE VOLTAGE (V)
VDS = -5V
-ID, DRAIN CURRENT (A)
4
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
VGS = 0V
1
o
TA = 125 C
0.1
o
25 C
0.01
o
-55 C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ293P Rev. D (W)
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Typical Characteristics
1200
ID = -4.6A
VDS = -5V
-10V
f = 1MHz
VGS = 0 V
1000
4
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
-15V
3
2
1
Ciss
800
600
400
Coss
200
Crss
0
0
2
4
6
8
0
10
0
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
15
rDS(on) LIMIT
100µs
1
DC
VGS = -4.5V
SINGLE PULSE
RθJA = 157oC/W
0.1
P(pk), PEAK TRANSIENT POWER (W)
20
10
10s
1ms
10ms
100ms
1s
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 157°C/W
TA = 25°C
15
10
5
0
0.01
0.1
1
10
100
1000
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
20
Figure 8. Capacitance Characteristics.
100
-ID, DRAIN CURRENT (A)
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 157 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ293P Rev. D (W)
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Typical Characteristics
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Dimensional Pad and Layout
FDZ293P Rev. D (W)
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