Vishay FEP6BT Dual common-cathode ultrafast rectifier Datasheet

FEP(F,B)6AT thru FEP(F,B)6DT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Rectifier
TO-220AB
FEATURES
• Glass passivated chip junction
ITO-220AB
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
2
PIN 2
PIN 3
CASE
1
1
FEP6xT Series
PIN 1
3
2
• High forward surge capability
3
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
FEPF6xT Series
PIN 1
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
PIN 2
PIN 3
TO-263AB
K
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
2
1
FEPB6xT Series
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
6.0 A
VRRM
50 V to 200 V
IFSM
75 A
trr
35 ns
VF
0.975 V
TJ max.
150 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP6AT
FEP6BT
FEP6CT
FEP6DT
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current at TC = 105 °C
IF(AV)
6.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
75
A
TJ, TSTG
- 55 to + 150
°C
VAC
1500
V
Operating storage and temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Document Number: 88598
Revision: 07-Nov-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
FEP(F,B)6AT thru FEP(F,B)6DT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode (1)
3.0 A
Maximum DC reverse current at rated DC
blocking voltage per diode
TC = 25 °C
TC = 100 °C
SYMBOL
FEP6AT
FEP6BT
FEP6CT
FEP6DT
UNIT
VF
0.975
V
IR
5.0
50
µA
Maximum reverse recovery time per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
35
ns
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
28
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case per diode
SYMBOL
FEP6
FEPF6
FEPB6
UNIT
RθJC
3.6
5.1
3.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
FEP6DT-E3/45
1.81
45
50/tube
Tube
ITO-220AB
FEPF6DT-E3/45
1.97
45
50/tube
Tube
TO-263AB
FEPB6DT-E3/45
1.33
45
50/tube
Tube
TO-263AB
FEPB6DT-E3/81
1.33
81
800/reel
Tape and reel
TO-220AB
FEP6DTHE3/45 (1)
1.81
45
50/tube
Tube
ITO-220AB
FEPF6DTHE3/45 (1)
1.97
45
50/tube
Tube
TO-263AB
FEPB6DTHE3/45 (1)
1.33
45
50/tube
Tube
TO-263AB
(1)
1.33
81
800/reel
Tape and reel
FEPB6DTHE3/81
Note:
(1) Automotive grade AEC Q101 qualified
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2
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88598
Revision: 07-Nov-07
FEP(F,B)6AT thru FEP(F,B)6DT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
Resistive or Inductive Load
Instantaneous Reverse Leakage
Current (µA)
Average Forward Rectified Current (A)
10
8
6
4
2
TJ = 125 °C
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
0
25
50
75
100
125
0
150
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics Per Diode
80
60
70
Junction Capacitance (pF)
Peak Forward Surge Current (A)
10
60
50
40
30
20
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
50
40
30
20
10
10
0
0
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
100
TJ = 125 °C
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Document Number: 88598
Revision: 07-Nov-07
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
FEP(F,B)6AT thru FEP(F,B)6DT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
PIN
2
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
7° REF.
0.076 (1.93) REF.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
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0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88598
Revision: 07-Nov-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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