E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1P B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. SuperSOT-6 Mark: .1P SOIC-16 Mark: MMPQ2222A pin #1 C1 C2 C1 C3 C2 C4 C4 C3 Dot denotes pin #1 FFB2222A / FMB2222A / MMPQ2222A FMB2222A FFB2222A NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C 4 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 1998 Fairchild Semiconductor Corporation Max FFB2222A 300 2.4 415 FMB2222A 700 5.6 180 Units MMPQ2222A 1,000 8.0 125 240 mW mW/°C °C/W °C/W °C/W (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO IC = 10 mA, IB = 0 40 V V(BR)CBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 75 V V(BR)EBO Emitter-Base Breakdown Voltage Collector Cutoff Current IE = 10 µA, IC = 0 VCB = 60 V, IE = 0 5.0 ICBO IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 V 10 nA 10 nA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage* VBE(sat) Base-Emitter Saturation Voltage* IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 100 50 40 300 0.3 1.0 1.2 2.0 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product 300 MHz Output Capacitance IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz Cobo Cibo NF 4.0 pF Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 20 pF Noise Figure IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz 2.0 dB 8 ns ns SWITCHING CHARACTERISTICS td Delay Time VCC = 30 V, VBE(OFF) = 0.5 V, tr Rise Time IC = 150 mA, IB1 = 15 mA 20 ts Storage Time VCC = 30 V, IC = 150 mA, 180 ns tf Fall Time IB1 = IB2 = 15 mA 40 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier (continued) V CE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) 500 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) 500 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current V BESAT - BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 0.4 β = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 4 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) Collector-Emitter Saturation Voltage vs Collector Current 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (° C) 150 FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 (continued) Typical Characteristics (continued) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Switching Times vs Collector Current 400 Ic 320 TIME (nS) V cc = 25 V 240 160 240 ts 160 tr t off 80 tf 80 t on td 100 I C - COLLECTOR CURRENT (mA) 1000 0 10 100 I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature PD - POWE R DIS SIPATION (W) TIME (nS) 10 320 V cc = 25 V 0 10 Ic I B1 = I B2 = 10 1 SOIC-16 SOT-6 0.75 0.5 SC70 -6 0.25 0 0 25 50 75 100 TE MPE RATURE (°C) 125 150 1000 FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier (continued) V CE = 10 V T A = 25oC 6 h oe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 8 CHAR. RELATIVE TO VALUES AT VCE = 10V CHAR. RELATIVE TO VALUES AT I C = 10mA Typical Common Emitter Characteristics (f = 1.0kHz) Common Emitter Characteristics 2.4 V CE = 10 V I C = 10 mA 2 h re h ie h fe 1.6 hoe 1.2 0.8 0.4 0 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier Common Emitter Characteristics 1.3 I C = 10 mA T A = 25oC 1.25 h fe 1.2 1.15 h ie 1.1 1.05 1 4 h re 0.95 0.9 0.85 hoe 0.8 0.75 0 5 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 (continued) Test Circuits 30 V 200 Ω 16 V Ω 1.0 KΩ 0 ≤ 200ns 500 Ω FIGURE 1: Saturated Turn-On Switching Time 6.0 V - 1.5 V 1k 30 V Ω 1.0 KΩ 0 ≤ 200ns 50 Ω FIGURE 2: Saturated Turn-Off Switching Time 37 Ω FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G