Formosa MS Chip Silicon Rectifier FFM101-L THRU FFM107-L Fast recovery type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 / 228 0.181(4.6) 0.165(4.2) Low leakage current. 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-214AC Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol o Forward rectified current Ambient temperature = 55 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current MAX. UNIT IO 1.0 A IFSM 30 A 5.0 uA 100 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage TSTG V RRM *1 V RMS *2 (V) (V) VR *3 (V) FFM101 F11 50 35 50 FFM102 F12 100 70 100 FFM103 F13 200 140 200 FFM104 F14 400 280 400 FFM105 F15 600 420 600 FFM106 F16 800 560 800 FFM107 F17 1000 700 1000 VF *4 (V) T RR *5 (nS) uA o 32 CJ Storage temperature MARKING CODE TYP. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MIN. C / w 15 -55 pF +150 o C Operating temperature (o C) 150 *1 Repetitive peak reverse voltage 1.3 -55 to +150 *2 RMS voltage 250 *3 Continuous reverse voltage 500 *4 Maximum forward voltage *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (FFM101-L THRU FFM107-L) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 3.0 1.0 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 20 40 Tj=25 C 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) Pulse Width 300us 1% Duty Cycle 0.1 .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) PEAK FORWAARD SURGE CURRENT,(A) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 Sine Wave 20 JEDEC method 10 0 1 5 2. Rise Time= 10ns max., Source Impedance= 50 ohms. | | | | | | | | 0 -0.25A 100 FIG.5-TYPICAL JUNCTION CAPACITANCE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. +0.5A 50 10 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) trr 8.3ms Single Half Tj=25 C (+) 1W NONINDUCTIVE 35 JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 50 30 25 20 15 10 5 0 -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100