Formosa FFM102-MH Chip silicon rectifier - fast recovery type Datasheet

Formosa
MS
FFM101-MH THRU FFM107-MH
Chip Silicon Rectifier
Fast recovery type
Features
SOD-123H
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
For surface mounted applications.
0.071(1.8)
0.055(1.4)
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.035(0.9)
0.028(0.7)
0.031(0.8) Typ.
Mechanical data
Case : Molded plastic, JEDEC SOD-123H
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0393 gram
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
o
Forward rectified current
Ambient temperature = 55 C
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
25o C
VR = VRRM TA =
Reverse current
MAX.
UNIT
IO
1.0
A
IFSM
25
A
5.0
uA
100
Junction to ambient
Diode junction capacitance
Rq JA
f=1MHz and applied 4vDC reverse voltage
TSTG
V RRM
*1
V RMS
*2
(V)
(V)
VR
*3
(V)
FFM101-MH
F1
50
35
50
FFM102-MH
F2
100
70
100
FFM103-MH
F3
200
140
200
FFM104-MH
F4
400
280
400
FFM105-MH
F5
600
420
600
FFM106-MH
F6
800
560
800
FFM107-MH
F7
1000
700
1000
VF
*4
(V)
T RR
*5
(nS)
uA
o
42
CJ
Storage temperature
MARKING
CODE
TYP.
IR
VR = VRRM TA = 100o C
Thermal resistance
SYMBOLS
MIN.
C / w
15
-55
pF
+150
o
C
Operating
temperature
(o C)
150
*1 Repetitive peak reverse voltage
1.3
-55 to +150
*2 RMS voltage
250
*3 Continuous reverse voltage
500
*4 Maximum forward voltage
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (FFM101-MH THRU FFM107-MH)
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
10
3.0
1.0
1.2
1.0
0.8
Single Phase
0.6
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0
20
40
Tj=25 C
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
.01
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
PEAK FORWAARD SURGE CURRENT,(A)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
Sine Wave
20
JEDEC method
10
0
1
5
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
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0
-0.25A
100
FIG.5-TYPICAL JUNCTION CAPACITANCE
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
+0.5A
50
10
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 1)
trr
8.3ms Single Half
Tj=25 C
(+)
1W
NONINDUCTIVE
35
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
50
30
25
20
15
10
5
0
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
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