Formosa FFM103-L Chip silicon rectifier fast recovery type Datasheet

Formosa MS
Chip Silicon Rectifier
FFM101-L THRU FFM107-L
Fast recovery type
Features
SMA-L
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
For surface mounted applications.
0.110(2.8)
0.094(2.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.181(4.6)
0.165(4.2)
Low leakage current.
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
o
Forward rectified current
Ambient temperature = 55 C
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
25o C
VR = VRRM TA =
Reverse current
MAX.
UNIT
IO
1.0
A
IFSM
30
A
5.0
uA
100
Junction to ambient
Diode junction capacitance
Rq JA
f=1MHz and applied 4vDC reverse voltage
TSTG
V RRM
*1
V RMS
*2
(V)
(V)
VR
*3
(V)
FFM101
F11
50
35
50
FFM102
F12
100
70
100
FFM103
F13
200
140
200
FFM104
F14
400
280
400
FFM105
F15
600
420
600
FFM106
F16
800
560
800
FFM107
F17
1000
700
1000
VF
*4
(V)
T RR
*5
(nS)
uA
o
32
CJ
Storage temperature
MARKING
CODE
TYP.
IR
VR = VRRM TA = 100o C
Thermal resistance
SYMBOLS
MIN.
C / w
15
-55
pF
+150
o
C
Operating
temperature
(o C)
150
*1 Repetitive peak reverse voltage
1.3
-55 to +150
*2 RMS voltage
250
*3 Continuous reverse voltage
500
*4 Maximum forward voltage
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (FFM101-L THRU FFM107-L)
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
10
3.0
1.0
1.2
1.0
0.8
Single Phase
0.6
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0
20
40
Tj=25 C
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
.01
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
( )
PEAK FORWAARD SURGE CURRENT,(A)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
Sine Wave
20
JEDEC method
10
0
1
5
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
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0
-0.25A
100
FIG.5-TYPICAL JUNCTION CAPACITANCE
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
+0.5A
50
10
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 1)
trr
8.3ms Single Half
Tj=25 C
(+)
1W
NONINDUCTIVE
35
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
50
30
25
20
15
10
5
0
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
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