Fairchild FFPF08S60SN 8a, 600v stealthtm ii rectifier Datasheet

STEALTHTM II Rectifier
FFPF08S60SN
tm
Features
8A, 600V STEALTHTM II Rectifier
• High Speed Switching, trr < 25ns @ IF = 8A
The FFPF08S60SN is STEALTHTM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
• High Reverse Voltage and High Reliability
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
TO-220F-2L
1. Cathode
2. Anode
1. Cathode 2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
Peak Repetitive Reverse Voltage
VRWM
VR
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
TJ, TSTG
Parameter
Ratings
600
Units
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
8
A
@ TC = 60oC
60
Operating and Storage Temperature Range
A
o
-65 to +150
C
Thermal Characteristics
Symbol
RθJC
Parameter
Ratings
Maximum Thermal Resistance, Junction to Case
Units
o
6.8
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
F08S60SN
FFPF08S60SNTU
TO220F-2L
-
-
50
©2008 Fairchild Semiconductor Corporation
FFPF08S60SN Rev. A
1
www.fairchildsemi.com
FFPF08S60SN
May 2008
Symbol
Min.
Typ.
Max.
Units
VFM1
IF = 8A
IF = 8A
Parameter
TC = 25oC
TC = 125oC
-
2.7
2.1
3.4
-
V
IRM1
VR = 600V
VR = 600V
TC = 25oC
TC = 125oC
-
-
100
500
μA
trr
IF = 1A, di/dt = 100A/μs, VR = 30V
TC = 25oC
-
13
-
ns
-
15
2.5
0.4
19
25
-
ns
A
-
32
3.8
0.7
62
-
nC
10
-
-
mJ
trr
Irr
S factor
Qrr
IF = 8A, di/dt = 200A/μs, VR = 390V
trr
Irr
S factor
Qrr
IF = 8A, di/dt = 200A/μs, VR = 390V
WAVL
Avalanche Energy ( L = 40mH)
o
TC = 25 C
TC = 125oC
nC
ns
A
Notes:
1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2%
Trr test circuit and waveform
Avalanch energy test circuit and waveform
FFPF08S60SN Rev. A
2
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FFPF08S60SN
Electrical Characteristics TC = 25oC unless otherwise noted
FFPF08S60SN
Typical Performance Characteristics
Figure 2. Typical Reverse Current vs.
Reverse Voltage
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
20
40
10
10
o
TC = 125 C
TC = 125 C
Reverse Current , IR [μA]
Forward Current, IF [A]
o
o
TC = 75 C
1
o
TC = 25 C
1
o
TC = 75 C
0.1
0.01
o
TC = 25 C
0.1
0
1
2
3
4
Forward Voltage, VF [V]
5
Figure 3.Typical Junction Capacitance
0.001
Reverse Recovery Time, trr [ns]
Capacitances , Cj [pF]
30
20
10
1
10
Reverse Voltage, VR [V]
o
o
TC = 75 C
20
o
TC = 25 C
200
300
400
di/dt [A/μs]
500
600
Figure 6. Forward Current Derating Curve
10
12
Average Forward Current, IF(AV) [A]
Reverse Recovery Current, Irr [A]
600
TC = 125 C
30
10
100
100
Figure 5. Typical Reverse Recovery
Current vs. di/dt
8
o
TC = 125 C
4
o
TC = 75 C
o
TC = 25 C
2
FFPF08S60SN Rev. A
500
IF = 8A
40
0
100
200
300
400
Reverse Voltage, VR [V]
40
Typical Capacitance
at 0V = 43 pF
6
100
Figure 4. Typical Reverse Recovery Time
vs. di/dt
50
0
0.1
10
9
6
3
IF = 8A
200
300
400
di/dt [A/μs]
500
0
25
600
3
50
75
100
125
o
Case temperature, TC [ C]
150
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TO220F 2L
ø3.18 ±0.10
2.54 ±0.20
3.30 ±0.10
10.16 ±0.20
MAX1.47
15.87 ±0.20
(1.80)
(6.50)
(1.00x45°)
12.00 ±0.20
9.75 ±0.30
15.80 ±0.20
6.68 ±0.20
(0.70)
2.76 ±0.20
0.80 ±0.10
0.35 ±0.10
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
+0.10
0.50 –0.05
4.70 ±0.20
2.54TYP
[2.54 ±0.20]
Dimensions in Millimeters
FFPF08S60SN Rev. A
4
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FFPF08S60SN
Mechanical Dimensions
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Rev. I33
FFPF08S60SN Rev. A
5
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FFPF08S60SN
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