Fairchild FGA15N120ANTD 1200v npt trench igbt Datasheet

FGA15N120ANTD / FGA15N120ANTD_F109
tm
1200V NPT Trench IGBT
Features
Description
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 1.9V
@ IC = 15A and TC = 25°C
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
• Low switching loss: Eoff, typ = 0.6mJ
@ IC = 15A and TC = 25°C
This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
• Extremely enhanced avalanche capability
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC
Collector Current
Collector Current
FGA15N120ANTD
Units
1200
V
± 20
V
@ TC = 25°C
30
A
@ TC = 100°C
15
A
45
A
15
A
45
A
ICM
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
Maximum Power Dissipation
@ TC = 25°C
186
W
Maximum Power Dissipation
@ TC = 100°C
74
W
(Note 1)
@ TC = 100°C
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case for IGBT
--
0.67
°C/W
RθJC
Thermal Resistance, Junction-to-Case for Diode
--
2.88
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
©2007 Fairchild Semiconductor Corporation
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
1
www.fairchildsemi.com
FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
May 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA15N120ANTD
FGA15N120ANTD
TO-3P
--
--
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
3
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 250
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 15mA, VCE = VGE
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 15A,
4.5
6.5
8.5
V
VGE = 15V
--
1.9
2.4
V
IC = 15A, VGE = 15V,
TC = 125°C
--
2.2
--
V
IC = 30A,
--
2.3
--
V
--
2650
--
pF
--
143
--
pF
--
96
--
pF
--
15
--
ns
--
20
--
ns
VGE = 15V
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
--
160
--
ns
tf
Fall Time
--
100
180
ns
Eon
Turn-On Switching Loss
--
3
4.5
mJ
Eoff
Turn-Off Switching Loss
--
0.6
0.9
mJ
Ets
Total Switching Loss
--
3.6
5.4
mJ
td(on)
Turn-On Delay Time
--
15
--
ns
tr
Rise Time
--
20
--
ns
td(off)
Turn-Off Delay Time
--
170
--
ns
tf
Fall Time
--
150
--
ns
Eon
Turn-On Switching Loss
--
3.2
4.8
mJ
Eoff
Turn-Off Switching Loss
--
0.8
1.2
mJ
Ets
Total Switching Loss
--
4.0
6.0
mJ
Qg
Total Gate Charge
--
120
180
nC
Qge
Gate-Emitter Charge
--
16
22
nC
Qgc
Gate-Collector Charge
--
50
65
nC
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
VCC = 600 V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600 V, IC = 15A,
VGE = 15V
2
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Package Marking and Ordering Information
C
Symbol
VFM
trr
Irr
Qrr
= 25°C unless otherwise noted
Parameter
Min.
Typ.
Max.
Units
TC = 25°C
--
1.7
2.7
V
TC = 125°C
--
1.8
--
TC = 25°C
--
210
330
TC = 125°C
--
280
--
Diode Peak Reverse Recovery Current
TC = 25°C
--
27
40
TC = 125°C
--
31
--
Diode Reverse Recovery Charge
TC = 25°C
--
2835
6600
TC = 125°C
--
4340
--
Diode Forward Voltage
Diode Reverse Recovery Time
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
Test Conditions
IF = 15A
IF = 15A
dI/dt = 200 A/μs
3
ns
A
nC
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Electrical Characteristics of DIODE T
Figure 1. Typical Output Characteristics
200
150
o
T C = 25 C
Common Emitter
VGE = 15V
20V
17V
15V
o
12V
TC = 25 C
120
o
150
Collector Current , IC [A]
Collector Current, IC [A]
Figure 2. Typical Saturation Voltage
Characteristics
V GE = 10V
100
50
TC = 125 C
90
60
30
0
0
2
4
6
8
0
10
0
2
Collector-Emitter Voltage, V CE [V]
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Common Emitter
V GE = 15V
Common Emitter
o
T C = 25 C
16
IC = 24A
2.5
IC = 15A
2.0
12
8
4
24A
50
75
100
125
0
150
4
Case Temperature, TC [ C]
Figure 5. Saturation Voltage vs. VGE
12
16
20
Figure 6. Capacitance Characteristics
3500
Common Emitter
o
TC = 125 C
3000
Ciss
2500
12
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
8
Gate-Emitter Voltage, V GE [V]
o
16
15A
I C = 7.5A
0
1.5
25
6
Figure 4. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
3.0
4
Collector-Emitter Voltage, VCE [V]
8
4
24A
15A
0
4
8
Common Emitter
VGE = 0V, f = 1MHz
1500
o
T C = 25 C
1000
Coss
500
IC = 7.5A
0
2000
Crss
0
12
16
0.1
20
Gate-Emitter Voltage, V GE [V]
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
1
10
Collector-Emitter Voltage, VCE[V]
4
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Turn-On Characteristics vs. Gate
Resistance
Figure 8. Turn-Off Characteristics vs. Gate
Resistance
100
Common Emitter
V CC = 600V, V GE = 15V
IC = 15A
1000
td(off)
o
T C = 25 C
10
o
Switching Time [ns]
Switching Time [ns]
tr
td(on)
Common Emitter
V CC = 600V, V GE = 15V
T C = 125 C
100
tf
IC = 15A
o
T C = 25 C
o
T C = 125 C
10
1
0
0
10
20
30
40
50
60
10
20
70
Gate Resistance, RG[Ω ]
Figure 9. Switching Loss vs. Gate Resistance
50
60
70
Common Emitter
V GE = 15V, R G = 10 Ω
o
T C = 25 C
100
IC = 15A
o
T C = 125 C
o
T C = 25 C
Switching Time [ns]
o
Switching Loss [mJ]
40
Figure 10. Turn-On Characteristics vs.
Collector Current
Common Emitter
V CC = 600V, V GE = 15V
10
30
Gate Resistance, R G [Ω ]
T C = 125 C
Eon
Eoff
tr
td(on)
10
1
0
10
20
30
40
50
60
10
70
15
Gate Resistance, R G [Ω ]
Figure 11. Turn-Off Characteristics vs.
Collector Current
30
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
V GE = 15V, R G = 10 Ω
o
o
T C = 25 C
10
o
T C = 125 C
Eon
o
T C = 125 C
td(off)
Switching Loss [mJ]
Switching Time [ns]
25
Figure 12. Switching Loss vs. Collector Current
T C = 25 C
100
tf
10
10
20
Collector Current, IC [A]
15
20
25
0.1
30
5
Collector Current, IC [A]
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
Eoff
1
10
15
20
25
30
Collector Current, IC [A]
5
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Gate Charge Characteristics
15
Figure 14. SOA Characteristics
Common Emitter
RL = 40Ω
10 0
12
Ic M A X (P u lse d)
50μs
Ic M A X (C o n tinu o us )
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
T C = 25 C
600V
9
400V
6
Vcc = 200V
3
0
1 00 μ s
10
1m s
D C O p e ra tio n
1
S in g le N on re p etitive
o
P u lse T c = 25 C
C urves m u st b e de rate d
lin ea rly w ith incre ase
in te m pe ratu re
0.1
0 .0 1
0
20
40
60
80
100
120
0.1
1
10
10 0
10 00
C o lle c to r - E m itte r V o lta g e , V C E [V ]
Gate Charge, Qg [nC]
Figure 15. Turn-Off SOA
Collector Current, IC [A]
100
10
Safe Operating Area
o
V GE = 15V, T C = 125 C
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 16. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
10
1
0.5
0.1
0.2
0.1
0.05
0.01
Pdm
0.02
t1
0.01
t2
single pulse
1E-3
1E-5
1E-4
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
6
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics
(Continued)
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
30
Reverse Recovery Currnet , Irr [A]
Forward Current , IF [A]
50
10
o
TJ = 125 C
o
TJ = 25 C
1
o
TC = 125 C
o
TC = 25 C
0.1
di/dt = 200A/μs
25
20
15
di/dt = 100A/μs
10
5
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
5
Forward Voltage , VF [V]
Figure 19. Stored Charge
15
20
25
Figure 20. Reverse Recovery Time
7000
400
6000
Reverse Recovery Time , trr [ns]
Stored Recovery Charge , Qrr [nC]
10
Forward Current , IF [A]
di/dt = 200A/μs
5000
4000
di/dt = 100A/μs
3000
2000
1000
di/dt = 100A/μs
300
200
di/dt = 200A/μs
100
0
0
5
10
15
20
5
25
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
10
15
20
25
Forward Current , IF [A]
Forward Current , IF [A]
7
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics
TO-3P
15.60 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.00 ±0.20
16.50 ±0.30
3.00 ±0.20
+0.15
1.50 –0.05
3.50 ±0.20
2.00 ±0.20
4.80 ±0.20
3.80 ±0.20
9.60 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
8
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Mechanical Dimensions
FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Mechanical Dimensions (continued)
TO-3PN
Dimensions in Millimeters
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
9
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
9
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
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