ETC2 FGA15N120ANTDTU F109 Extremely enhanced avalanche capability Datasheet

FGA15N120ANTD / FGA15N120ANTD_F109
tm
1200V NPT Trench IGBT
Features
Description
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 1.9V
@ IC = 15A and TC = 25°C
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
• Low switching loss: Eoff, typ = 0.6mJ
@ IC = 15A and TC = 25°C
This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
• Extremely enhanced avalanche capability
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC
Collector Current
Collector Current
FGA15N120ANTD
Units
1200
V
± 20
V
@ TC = 25°C
30
A
@ TC = 100°C
15
A
45
A
15
A
45
A
ICM
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
Maximum Power Dissipation
@ TC = 25°C
186
W
Maximum Power Dissipation
@ TC = 100°C
74
W
(Note 1)
@ TC = 100°C
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case for IGBT
--
0.67
°C/W
RθJC
Thermal Resistance, Junction-to-Case for Diode
--
2.88
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
©2007 Fairchild Semiconductor Corporation
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
1
www.fairchildsemi.com
FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
May 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA15N120ANTD
FGA15N120ANTD
TO-3P
--
--
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
3
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 250
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 15mA, VCE = VGE
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 15A,
4.5
6.5
8.5
V
VGE = 15V
--
1.9
2.4
V
IC = 15A, VGE = 15V,
TC = 125°C
--
2.2
--
V
IC = 30A,
--
2.3
--
V
--
2650
--
pF
--
143
--
pF
--
96
--
pF
--
15
--
ns
--
20
--
ns
VGE = 15V
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
--
160
--
ns
tf
Fall Time
--
100
180
ns
Eon
Turn-On Switching Loss
--
3
4.5
mJ
Eoff
Turn-Off Switching Loss
--
0.6
0.9
mJ
Ets
Total Switching Loss
--
3.6
5.4
mJ
td(on)
Turn-On Delay Time
--
15
--
ns
tr
Rise Time
--
20
--
ns
td(off)
Turn-Off Delay Time
--
170
--
ns
tf
Fall Time
--
150
--
ns
Eon
Turn-On Switching Loss
--
3.2
4.8
mJ
Eoff
Turn-Off Switching Loss
--
0.8
1.2
mJ
Ets
Total Switching Loss
--
4.0
6.0
mJ
Qg
Total Gate Charge
--
120
180
nC
Qge
Gate-Emitter Charge
--
16
22
nC
Qgc
Gate-Collector Charge
--
50
65
nC
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
VCC = 600 V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600 V, IC = 15A,
VGE = 15V
2
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Package Marking and Ordering Information
C
Symbol
VFM
trr
Irr
Qrr
= 25°C unless otherwise noted
Parameter
Min.
Typ.
Max.
Units
TC = 25°C
--
1.7
2.7
V
TC = 125°C
--
1.8
--
TC = 25°C
--
210
330
TC = 125°C
--
280
--
Diode Peak Reverse Recovery Current
TC = 25°C
--
27
40
TC = 125°C
--
31
--
Diode Reverse Recovery Charge
TC = 25°C
--
2835
6600
TC = 125°C
--
4340
--
Diode Forward Voltage
Diode Reverse Recovery Time
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
Test Conditions
IF = 15A
IF = 15A
dI/dt = 200 A/μs
3
ns
A
nC
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Electrical Characteristics of DIODE T
Figure 1. Typical Output Characteristics
200
150
o
T C = 25 C
Common Emitter
VGE = 15V
20V
17V
15V
o
12V
TC = 25 C
120
o
150
Collector Current , IC [A]
Collector Current, IC [A]
Figure 2. Typical Saturation Voltage
Characteristics
V GE = 10V
100
50
TC = 125 C
90
60
30
0
0
2
4
6
8
0
10
0
2
Collector-Emitter Voltage, V CE [V]
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Common Emitter
V GE = 15V
Common Emitter
o
T C = 25 C
16
IC = 24A
2.5
IC = 15A
2.0
12
8
4
24A
50
75
100
125
0
150
4
Case Temperature, TC [ C]
Figure 5. Saturation Voltage vs. VGE
12
16
20
Figure 6. Capacitance Characteristics
3500
Common Emitter
o
TC = 125 C
3000
Ciss
2500
12
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
8
Gate-Emitter Voltage, V GE [V]
o
16
15A
I C = 7.5A
0
1.5
25
6
Figure 4. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
3.0
4
Collector-Emitter Voltage, VCE [V]
8
4
24A
15A
0
4
8
Common Emitter
VGE = 0V, f = 1MHz
1500
o
T C = 25 C
1000
Coss
500
IC = 7.5A
0
2000
Crss
0
12
16
0.1
20
Gate-Emitter Voltage, V GE [V]
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
1
10
Collector-Emitter Voltage, VCE[V]
4
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics
(Continued)
Figure 7. Turn-On Characteristics vs. Gate
Resistance
Figure 8. Turn-Off Characteristics vs. Gate
Resistance
100
Common Emitter
V CC = 600V, V GE = 15V
IC = 15A
1000
td(off)
o
T C = 25 C
10
o
Switching Time [ns]
Switching Time [ns]
tr
td(on)
Common Emitter
V CC = 600V, V GE = 15V
T C = 125 C
100
tf
IC = 15A
o
T C = 25 C
o
T C = 125 C
10
1
0
0
10
20
30
40
50
60
10
20
70
Gate Resistance, RG[Ω ]
Figure 9. Switching Loss vs. Gate Resistance
50
60
70
Common Emitter
V GE = 15V, R G = 10 Ω
o
T C = 25 C
100
IC = 15A
o
T C = 125 C
o
T C = 25 C
Switching Time [ns]
o
Switching Loss [mJ]
40
Figure 10. Turn-On Characteristics vs.
Collector Current
Common Emitter
V CC = 600V, V GE = 15V
10
30
Gate Resistance, R G [Ω ]
T C = 125 C
Eon
Eoff
tr
td(on)
10
1
0
10
20
30
40
50
60
10
70
15
Gate Resistance, R G [Ω ]
Figure 11. Turn-Off Characteristics vs.
Collector Current
30
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
V GE = 15V, R G = 10 Ω
o
o
T C = 25 C
10
o
T C = 125 C
Eon
o
T C = 125 C
td(off)
Switching Loss [mJ]
Switching Time [ns]
25
Figure 12. Switching Loss vs. Collector Current
T C = 25 C
100
tf
10
10
20
Collector Current, IC [A]
15
20
25
0.1
30
5
Collector Current, IC [A]
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
Eoff
1
10
15
20
25
30
Collector Current, IC [A]
5
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Gate Charge Characteristics
15
Figure 14. SOA Characteristics
Common Emitter
RL = 40Ω
10 0
12
Ic M A X (P u lse d)
50μs
Ic M A X (C o n tinu o us )
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
T C = 25 C
600V
9
400V
6
Vcc = 200V
3
0
1 00 μ s
10
1m s
D C O p e ra tio n
1
S in g le N on re p etitive
o
P u lse T c = 25 C
C urves m u st b e de rate d
lin ea rly w ith incre ase
in te m pe ratu re
0.1
0 .0 1
0
20
40
60
80
100
120
0.1
1
10
10 0
10 00
C o lle c to r - E m itte r V o lta g e , V C E [V ]
Gate Charge, Qg [nC]
Figure 15. Turn-Off SOA
Collector Current, IC [A]
100
10
Safe Operating Area
o
V GE = 15V, T C = 125 C
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 16. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
10
1
0.5
0.1
0.2
0.1
0.05
0.01
Pdm
0.02
t1
0.01
t2
single pulse
1E-3
1E-5
1E-4
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
6
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics
(Continued)
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
30
Reverse Recovery Currnet , Irr [A]
Forward Current , IF [A]
50
10
o
TJ = 125 C
o
TJ = 25 C
1
o
TC = 125 C
o
TC = 25 C
0.1
di/dt = 200A/μs
25
20
15
di/dt = 100A/μs
10
5
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
5
Forward Voltage , VF [V]
Figure 19. Stored Charge
15
20
25
Figure 20. Reverse Recovery Time
7000
400
6000
Reverse Recovery Time , trr [ns]
Stored Recovery Charge , Qrr [nC]
10
Forward Current , IF [A]
di/dt = 200A/μs
5000
4000
di/dt = 100A/μs
3000
2000
1000
di/dt = 100A/μs
300
200
di/dt = 200A/μs
100
0
0
5
10
15
20
5
25
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
10
15
20
25
Forward Current , IF [A]
Forward Current , IF [A]
7
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Typical Performance Characteristics
TO-3P
15.60 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.00 ±0.20
16.50 ±0.30
3.00 ±0.20
+0.15
1.50 –0.05
3.50 ±0.20
2.00 ±0.20
4.80 ±0.20
3.80 ±0.20
9.60 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
8
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Mechanical Dimensions
FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
Mechanical Dimensions (continued)
TO-3PN
Dimensions in Millimeters
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
9
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Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
9
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
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FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
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