Fairchild FGB40N6S2 600v, smps ii series n-channel igbt Datasheet

FGH40N6S2 / FGP40N6S2 / FGB40N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• 100kHz Operation at 390V, 24A
•
•
•
•
•
•
• 200kHZ Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 35nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• Low Conduction Loss
IGBT (co-pack) formerly Developmental Type TA49438
Package
Symbol
TO-247
E
C
G
TO-220AB
C
E
C
TO-263AB
G
G
G
E
COLLECTOR
(Back-Metal)
COLLECTOR
(Flange)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
600
Units
V
IC25
Collector Current Continuous, TC = 25°C
75
A
IC110
Collector Current Continuous, TC = 110°C
35
A
ICM
VGES
Collector Current Pulsed (Note 1)
180
A
Gate to Emitter Voltage Continuous
±20
V
±30
V
VGEM
Gate to Emitter Voltage Pulsed
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
100A at 600V
EAS
Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V
260
PD
Power Dissipation Total TC = 25°C
290
W
Power Dissipation Derating TC > 25°C
2.33
W/°C
TJ
TSTG
mJ
Operating Junction Temperature Range
-55 to 150
°C
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
August 2003
Device Marking
40N6S2
Device
FGH40N6S2
Package
TO-247
Reel Size
Tube
Tape Width
N/A
Quantity
30
40N6S2
FGP40N6S2
TO-220AB
Tube
N/A
50
40N6S2
FGB40N6S2
TO-263AB
Tube
N/A
50
40N6S2
FGB40N6S2T
TO-263AB
330mm
24mm
800
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
Off State Characteristics
BVCES
Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0
600
-
-
BVECS
20
-
-
V
ICES
Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0
Collector to Emitter Leakage Current
VCE = 600V
TJ = 25°C
-
-
250
µA
IGES
Gate to Emitter Leakage Current
TJ = 125°C
VGE = ± 20V
-
-
2.0
mA
-
-
±250
nA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
IC = 20A,
VGE = 15V
TJ = 25°C
-
1.9
2.7
V
TJ = 125°C
-
1.7
2.0
V
IC = 20A,
VCE = 300V
VGE = 15V
-
35
42
nC
VGE = 20V
-
45
55
nC
Dynamic Characteristics
QG(ON)
VGE(TH)
VGEP
Gate Charge
Gate to Emitter Threshold Voltage
IC = 250µA, VCE = VGE
3.5
4.3
5.0
V
Gate to Emitter Plateau Voltage
IC = 20A, VCE = 300V
-
6.5
8.0
V
100
-
-
A
-
8.0
-
ns
-
10
-
ns
-
35
-
ns
Switching Characteristics
SSOA
Switching SOA
TJ = 150°C, VGE = 15V, RG = 3Ω
L = 100µH, VCE = 600V
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 25°C,
ICE = 20A,
VCE = 390V,
VGE = 15V,
RG = 3Ω
L = 200µH
Test Circuit - Figure 26
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 2)
EON2
Turn-On Energy (Note 2)
EOFF
Turn-Off Energy (Note 3)
td(ON)I
Current Turn-On Delay Time
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 2)
EON2
Turn-On Energy (Note 2)
EOFF
Turn-Off Energy (Note 3)
IGBT and Diode at TJ = 125°C
ICE = 20A,
VCE = 390V,
VGE = 15V,
RG = 3Ω
L = 200µH
Test Circuit - Figure 26
-
55
-
ns
-
115
-
µJ
-
200
-
µJ
-
195
260
µJ
-
14
-
ns
-
18
-
ns
-
68
85
ns
-
85
105
ns
-
115
-
µJ
-
380
450
µJ
-
375
600
µJ
-
-
0.43
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
TO-247
NOTE:
2. Values
for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss
of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ
as the IGBT. The diode type is specified in figure 26.
3. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Package Marking and Ordering Information
TJ = 25°C unless otherwise noted
90
ICE, COLLECTOR TO EMITTER CURRENT (A)
125
PACKAGE LIMITED
70
60
50
40
30
20
10
0
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
100
75
50
25
0
25
50
75
100
125
150
0
100
TC , CASE TEMPERATURE (oC)
Figure 1. DC Collector Current vs Case
Temperature
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX, OPERATING FREQUENCY (kHz)
400
500
700
600
13
TC = 75oC
VGE = 15V
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.27oC/W, SEE NOTES
10
VGE = 10V
TJ = 125oC, RG = 3Ω, L = 200µH, V CE = 390V
500
VCE = 390V, RG = 3Ω, TJ = 125oC
11
450
9
400
ISC
7
350
5
300
tSC
3
1
10
1
30
250
9
60
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
11
13
12
14
16
15
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
40
DUTY CYCLE < 0.5%, VGE =10V
PULSE DURATION = 250µs
30
25
20
15
TJ = 25oC
10
TJ = 150oC
5
TJ = 125oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
300
Figure 2. Minimum Switching Safe Operating Area
1000
35
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
80
DUTY CYCLE < 0.5%, VGE =15V
35
PULSE DURATION = 250µs
30
25
20
15
TJ = 25oC
10
TJ = 150oC
5
TJ = 125oC
0
0
0.0 0.2
0.4
0.6
0.8
1.0
1.2
1.4 1.6
1.8
2.0
2.2
2.4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation
0.0 0.2
0.4
0.6
0.8
1.0 1.2
1.4 1.6
1.8
2.0
2.2
2.4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves
TJ = 25°C unless otherwise noted
1400
1400
RG = 3Ω, L = 200µH, VCE = 390V
1200
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
RG = 3Ω, L = 200µH, VCE = 390V
TJ = 25oC, TJ = 125oC, VGE = 10V
1000
800
600
400
200
0
5
15
10
20
25
30
35
800
TJ = 125oC, VGE = 10V, VGE = 15V
600
400
200
TJ = 25oC, VGE = 10V, VGE = 15V
TJ = 25oC, TJ = 125oC, VGE = 15V
0
1000
0
0
40
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
10
15
20
25
30
35
40
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
60
20
RG = 3Ω, L = 200µH, VCE = 390V
RG = 3Ω, L = 200µH, VCE = 390V
50
16
o
o
TJ = 25 C, TJ = 125 C, VGE = 10V
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
12
8
TJ = 25oC, TJ = 125oC, VGE = 15V
4
40
30
TJ = 25oC, TJ = 125oC, VGE = 10V
20
10
TJ = 25oC, TJ = 125oC, VGE =15V
0
0
0
5
10
15
20
25
30
35
0
40
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
15
20
25
30
35
40
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
80
100
RG = 3Ω, L = 200µH, VCE = 390V
RG = 3Ω, L = 200µH, VCE = 390V
70
90
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
60
VGE = 10V, VGE = 15V, TJ = 125oC
50
40
30
80
TJ = 125oC, VGE = 10V, VGE = 15V
70
60
50
TJ = 25oC, VGE = 10V, VGE = 15V
VGE = 10V, VGE = 15V, TJ = 25oC
20
40
0
5
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
©2003 Fairchild Semiconductor Corporation
0
5
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves
TJ = 25°C unless otherwise noted
16
IG(REF) = 1mA, RL = 15Ω
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
175
14
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
150
125
100
75
TJ = 25oC
50
TJ = -55oC
TJ = 125oC
25
12
VCE = 600V
10
VCE = 400V
8
6
4
VCE = 200V
2
0
0
3
4
5
6
7
8
10
9
11
12
0
5
10
VGE, GATE TO EMITTER VOLTAGE (V)
ETOTAL = EON2 + EOFF
ICE = 40A
1.2
ICE = 20A
0.4
ICE = 10A
0
25
50
75
125
100
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
RG = 3Ω, L = 200µH, VCE = 390V, VGE = 15V
0.8
30
35
150
100
TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 40A
ICE = 20A
1
ICE = 10A
0.1
1.0
10
o
100
1000
RG, GATE RESISTANCE (Ω)
TC , CASE TEMPERATURE ( C)
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
4.0
FREQUENCY = 1MHz
2.5
C, CAPACITANCE (nF)
25
Figure 14. Gate Charge
2.4
1.6
20
QG , GATE CHARGE (nC)
Figure 13. Transfer Characteristic
2.0
15
2.0
CIES
1.5
1.0
COES
0.5
CRES
0.0
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
3.6
3.2
2.8
ICE = 40A
2.4
ICE = 20A
2.0
ICE = 10A
1.6
0
20
40
60
80
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
©2003 Fairchild Semiconductor Corporation
6
7
8
9
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves
ZθJC , NORMALIZED THERMAL RESPONSE
TJ = 25°C unless otherwise noted
10o
0.50
0.20
t1
0.10
PD
10-1
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGH40N6S2D
DIODE TA49391
90%
10%
VGE
EON2
EOFF
L = 200µH
VCE
RG = 3Ω
90%
+
FGH40N6S2
ICE
VDD = 390V
-
10%
td(OFF)I
tfI
trI
td(ON)I
Figure 20. Inductive Switching Test Circuit
©2003 Fairchild Semiconductor Corporation
Figure 21. Switching Test Waveforms
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge
of energy through the devices. When handling these
devices, care should be exercised to assure that the
static charge built in the handler’s body capacitance
is not discharged through the device. With proper
handling and application procedures, however,
IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with
virtually no damage problems due to electrostatic
discharge. IGBTs can be handled safely if the
following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means - for example, with a
metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide layer
in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (ICE) plots are
possible using the information shown for a typical unit
in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 27. Device turn-off delay can
establish an additional frequency limiting condition for
an application other than TJM . td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM - TC)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 50%
duty factor was used (Figure 3) and the conduction
losses (PC) are approximated by P C = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching
waveforms shown in Figure 27. EON2 is the integral of
the instantaneous power loss (ICE x VCE) during turnon and EOFF is the integral of the instantaneous
power loss (ICE x VCE) during turn-off. All tail losses
are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Handling Precautions for IGBTs
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
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