Fairchild FGH30N120FTDTU Field stop trench technology Datasheet

FGH30N120FTD
tm
1200V, 30A Trench IGBT
Features
General Description
• Field stop trench technology
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applications.
• High speed switching
• Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microwave oven
• Soft switching applications
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
Ratings
Units
1200
V
± 25
V
Collector Current
@ TC = 25oC
60
A
Collector Current
o
30
A
A
@ TC = 100 C
o
ICM (1)
Pulsed Collector Current
@ TC = 25 C
90
IF
Diode Continuous Forward Current
@ TC = 100oC
30
A
339
W
PD
o
Maximum Power Dissipation
@ TC = 25 C
Maximum Power Dissipation
o
@ TC = 100 C
132
Operating Junction Temperature
TJ
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.38
o
C/W
RθJC(Diode)
Thermal Resistance, Junction to Case
-
1.2
o
C/W
40
o
C/W
RθJA
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. A
-
1
www.fairchildsemi.com
FGH30N120FTD 1200V, 30A Trench IGBT
November 2008
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH30N120FTD
FGH30N120FTDTU
TO-247
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
1200
-
-
V
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±250
nA
3.5
6
7.5
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
-
1.6
2
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 30A, VGE = 15V,
TC = 125oC
-
2.0
-
V
-
5140
-
pF
-
150
-
pF
-
95
-
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
31
-
ns
tr
Rise Time
-
101
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
td(on)
tr
td(off)
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
1.63
-
mJ
Ets
Total Switching Loss
-
2.37
-
mJ
-
198
-
ns
-
259
-
ns
-
0.54
-
mJ
-
1.16
1.51
mJ
Total Switching Loss
-
1.70
-
mJ
Turn-On Delay Time
-
40
-
ns
Rise Time
-
127
-
ns
Turn-Off Delay Time
-
211
-
ns
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
FGH30N120FTD Rev. A
VCC = 600V, IC = 30A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 30A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 600V, IC = 30A,
VGE = 15V
2
-
364
-
ns
-
0.74
-
mJ
-
208
-
nC
-
41
-
nC
-
97
-
nC
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FGH30N120FTD 1200V, 30A Trench IGBT
Package Marking and Ordering Information
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
IF =30A,
Diode Peak Reverse Recovery Current di/dt = 200A/µs
Qrr
Diode Reverse Recovery Charge
FGH30N120FTD Rev. A
IF = 30A
Min.
Typ.
Max
TC = 25oC
-
1.3
1.7
TC = 125oC
-
1.3
-
TC = 25oC
-
730
-
-
775
-
TC = 25oC
-
43
-
o
TC = 125 C
-
47
-
TC = 25oC
-
5.9
-
o
-
18.2
-
TC =
125oC
TC = 125 C
3
Units
V
ns
A
µC
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FGH30N120FTD 1200V, 30A Trench IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
180
Figure 2. Typical Output Characteristics
180
o
TC = 25 C
20V
150
150
17V
15V
120
Collector Current, IC [A]
Collector Current, IC [A]
o
TC = 125 C
20V
12V
90
60
10V
9V
15V
17V
120
90
12V
60
10V
30
30
9V
VGE = 8V
0
0
0
2
4
6
Collector-Emitter Voltage, VCE [V]
0
8
Figure 3. Typical Saturation Voltage
Characteristics
8
120
Common Emitter
VGE = 15V
100
o
TC = 25 C
o
TC = 125 C
80
Common Emitter
VCE = 20V
100
Collector Current, IC [A]
Collector Current, IC [A]
2
4
6
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
120
60
40
20
o
TC = 25 C
o
TC = 125 C
80
60
40
20
0
0
2
4
Collector-Emitter Voltage, VCE [V]
0
6
0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
15
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Common Emitter
60A
2.5
5
10
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
3.0
Collector-Emitter Voltage, VCE [V]
VGE = 8V
2.0
30A
1.5
IC = 10A
o
TC = 25 C
16
12
8
60A
4
30A
IC = 15A
1.0
25
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGH30N120FTD Rev. A
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGH30N120FTD 1200V, 30A Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
20
8000
Common Emitter
o
Collector-Emitter Voltage, VCE [V]
TC = 125 C
Cies
16
Common Emitter
VGE = 0V, f = 1MHz
o
TC = 25 C
Capacitance [pF]
6000
12
8
30A
IC = 15A
Cres
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
0
20
1
Figure 9. Gate charge Characteristics
10
Collector-Emitter Voltage, VCE [V]
200
100
Common Emitter
o
10µs
TC = 25 C
Collector Current, Ic [A]
12
600V
VCC = 200V
30
Figure 10. SOA Characteristics
15
Gate-Emitter Voltage, VGE [V]
Coes
2000
60A
4
4000
400V
9
6
3
100µs
10
1ms
10 ms
DC
1
*Notes:
0.1
o
1. TC = 25 C
o
0
0
50
100
150
200
Gate Charge, Qg [nC]
2. TJ = 150 C
3. Single Pulse
0.01
250
1
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
1000 3000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
500
2000
100
tr
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
td(on)
td(off)
Switching Time [ns]
Switching Time [ns]
1000
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
100
o
TC = 25 C
o
TC = 25 C
o
o
TC = 125 C
TC = 125 C
10
0
20
40
60
80
50
100
0
Gate Resistance, RG [Ω ]
FGH30N120FTD Rev. A
5
20
40
60
Gate Resistance, RG [Ω ]
80
100
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FGH30N120FTD 1200V, 30A Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
1200
1000
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VGE = 15V, RG = 10Ω
o
o
TC = 25 C
o
o
TC = 125 C
tr
100
td(on)
10
10
20
30
40
TC = 125 C
Switching Time [ns]
Switching Time [ns]
TC = 25 C
tf
td(off)
100
10
50
20
30
40
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
50
Figure 16. Switching Loss vs. Collector Current
10
10
Common Emitter
VGE = 15V, RG = 10Ω
o
Switching Loss [mJ]
Switching Loss [mJ]
TC = 25 C
Eoff
1
Common Emitter
VCC = 600V, VGE = 15V
Eon
IC = 30A
Eoff
o
TC = 125 C
1
Eon
o
TC = 25 C
o
TC = 125 C
0.1
0
20
40
60
80
Gate Resistance, RG [Ω ]
0.1
10
100
Figure 17. Turn off Switching SOA Characteristics
50
Figure 18. Forward Characteristics
100
Forward Current, IF [A]
100
Collector Current, IC [A]
20
30
40
Collector Current, IC [A]
10
10
o
TJ = 125 C
o
TJ = 25 C
1
o
TC = 25 C
Safe Operating Area
o
TC = 125 C
o
VGE = 15V, TC = 125 C
1
1
10
100
0.1
0.0
1000 2000
Collector-Emitter Voltage, VCE [V]
FGH30N120FTD Rev. A
6
0.5
1.0
Forward Voltage, VF [V]
1.5
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FGH30N120FTD 1200V, 30A Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Current
Figure 20. Stored Charge
20
40
30
20
10
Stored Recovery Charge, Qrr [µC]
Reverse Recovery Currnet, Irr [A]
50
200A/µs
di/dt = 100A/µs
20
30
Forward Current, IF [A]
18
16
200A/µs
14
di/dt = 100A/µs
12
10
8
6
10
40
20
30
Forward Current, IF [A]
40
Figure 21. Reverse Recovery Time
Reverse Recovery Time, trr [ns]
1000
800
600
400
10
di/dt = 100A/µs
200A/µs
20
30
Forward Current, IF [A]
40
Figure 22. Transient Thermal Impedance of IGBT
PDM
t1
t2
FGH30N120FTD Rev. A
7
www.fairchildsemi.com
FGH30N120FTD 1200V, 30A Trench IGBT
Typical Performance Characteristics
FGH30N120FTD 1200V, 30A Trench IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
FGH30N120FTD Rev. A
8
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I36
FGH30N120FTD Rev. A
9
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FGH30N120FTD 1200V, 30A Trench IGBT
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