Fairchild FGH40N60SMDF 600v, 40a field stop igbt Datasheet

FGH40N60SMDF
tm
600V, 40A Field Stop IGBT
Features
General Description
• Maximum Junction Temperature : TJ =175oC
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Solar
Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential.
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
Applications
• Solar Inverter, UPS, SMPS, PFC
• Induction Heating
C
G
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
± 20
V
IC
ICM (1)
IF
IFM (1)
PD
Collector Current
@ TC = 25oC
80
A
Collector Current
@ TC = 100oC
40
A
Pulsed Collector Current
Diode Forward Current
@ TC = 25oC
Diode Forward Current
@ TC = 100oC
Pulsed Diode Maximum Forward Current
o
120
A
40
A
20
A
120
A
W
Maximum Power Dissipation
@ TC = 25 C
349
Maximum Power Dissipation
@ TC = 100oC
174
W
TJ
Operating Junction Temperature
-55 to +175
o
Tstg
Storage Temperature Range
-55 to +175
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2011 Fairchild Semiconductor Corporation
FGH40N60SMDF Rev. B1
1
www.fairchildsemi.com
FGH40N60SMDF 600V, 40A Field Stop IGBT
March 2011
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.43
o
RθJC(Diode)
Thermal Resistance, Junction to Case
-
1.45
oC/W
RθJA
Thermal Resistance, Junction to Ambient
-
40
oC/W
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH40N60SMDF
FGH40N60SMDF
TO-247
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
-
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
-
0.6
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
μA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250μA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
3.5
4.5
6.0
V
IC = 40A, VGE = 15V
-
1.9
2.5
V
IC = 40A, VGE = 15V,
TC = 175oC
-
2.1
-
V
-
1880
-
pF
-
180
-
pF
-
50
-
pF
16
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
-
12
tr
Rise Time
-
20
28
ns
td(off)
Turn-Off Delay Time
-
92
120
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Ets
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 25oC
-
13
17
ns
-
1.3
2.0
mJ
Turn-Off Switching Loss
-
0.26
0.34
mJ
Total Switching Loss
-
1.56
2.34
mJ
td(on)
Turn-On Delay Time
-
15
-
ns
tr
Rise Time
-
22
-
ns
td(off)
Turn-Off Delay Time
-
116
-
ns
tf
Fall Time
-
16
-
ns
VCC = 400V, IC = 40A,
RG = 6Ω, VGE = 15V,
Inductive Load, TC = 175oC
Eon
Turn-On Switching Loss
-
2.1
-
mJ
Eoff
Turn-Off Switching Loss
-
0.6
-
mJ
Ets
Total Switching Loss
-
2.7
-
mJ
FGH40N60SMDF Rev. B1
2
www.fairchildsemi.com
FGH40N60SMDF 600V, 40A Field Stop IGBT
Thermal Characteristics
Symbol
Qg
Parameter
(Continued)
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 40A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
FGH40N60SMDF Rev. B1
Min.
Typ.
Max
Units
-
119
180
nC
-
13
20
nC
-
58
90
nC
Units
TC = 25°C unless otherwise noted
Test Conditions
IF = 20A
IF =20A, dIF/dt = 200A/μs
3
Min.
Typ.
Max
TC = 25oC
-
1.3
1.7
TC = 175oC
-
1.15
-
TC = 175oC
-
138
-
-
70
100
-
210
-
TC =
25oC
TC = 175oC
TC = 25oC
-
250
350
TC = 175oC
-
1875
-
V
uJ
ns
nC
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FGH40N60SMDF 600V, 40A Field Stop IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
120
o
TC = 25 C
20V
15V
120
12V
o
TC = 175 C
100
10V
80
60
VGE = 8V
40
12V
10V
80
60
VGE = 8V
40
20
20
0
0
2
4
Collector-Emitter Voltage, VCE [V]
0
6
0
Figure 3. Typical Saturation Voltage
Characteristics
2
4
Collector-Emitter Voltage, VCE [V]
6
Figure 4. Transfer Characteristics
120
120
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
o
TC = 25 C
o
TC = 175 C
80
TC = 25 C
Collector Current, IC [A]
100
Collector Current, IC [A]
20V
15V
100
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
60
40
90 T = 175oC
C
60
30
20
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
0
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
20
Common Emitter
VGE = 15V
80A
2.0
40A
1.5
IC = 20A
1.0
25
12
4
Common Emitter
o
TC = -40 C
16
12
8
40A
80A
4
IC = 20A
0
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
FGH40N60SMDF Rev. B1
4
6
8
10
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
3.0
2.5
2
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
40A
80A
4
IC = 20A
0
o
TC = 175 C
16
12
8
80A
4
40A
IC = 20A
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
4
20
Figure 9. Capacitance Characteristics
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
4000
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Gate-Emitter Voltage, VGE [V]
o
o
TC = 25 C
Capacitance [pF]
3000
Cies
2000
1000
Coes
TC = 25 C
400V
12
VCC = 200V
300V
9
6
3
Cres
0
0.1
0
1
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
40
80
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
300
100
10μs
100
tr
100μs
1ms
10 ms
10
Switching Time [ns]
Collector Current, Ic [A]
120
DC
1
*Notes:
0.1
o
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
1. TC = 25 C
o
TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
FGH40N60SMDF Rev. B1
o
TC = 175 C
1
1000
0
5
10
20
30
40
Gate Resistance, RG [Ω]
50
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FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
1000
Common Emitter
VGE = 15V, RG = 6Ω
o
TC = 25 C
100
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
10
o
Switching Time [ns]
Switching Time [ns]
td(off)
TC = 175 C
100
tr
10
td(on)
o
TC = 25 C
o
TC = 175 C
1
0
10
20
30
40
1
20
50
30
40
Gate Resistance, RG [Ω]
50
60
70
80
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
1000
5
Eon
Switching Loss [mJ]
Switching Time [ns]
td(off)
100
tf
10
Common Emitter
VGE = 15V, RG = 6Ω
o
1
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
TC = 25 C
o
o
TC = 175 C
1
20
30
40
50
60
TC = 175 C
70
0.1
80
0
Collector Current, IC [A]
Figure 17. Switching Loss vs.
Collector Current
10
20
30
40
Gate Resistance, RG [Ω]
50
Figure 18. Turn off Switching
SOA Characteristics
6
200
100
Collector Current, IC [A]
Switching Loss [mJ]
Eon
1
Eoff
Common Emitter
VGE = 15V, RG = 6Ω
o
TC = 25 C
10
Safe Operating Area
o
o
TC = 175 C
0.1
20
30
40
50
60
70
VGE = 15V, TC = 175 C
1
80
1
Collector Current, IC [A]
FGH40N60SMDF Rev. B1
10
100
1000
Collector-Emitter Voltage, VCE [V]
6
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FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Load Current Vs. Frequency
90
Square Wave
110
o
TJ < 175 C, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6Ω
100
70
Collector Current, IC [A]
Collector Current, IC [A]
120
Common Emitter
VGE = 15V
80
60
50
40
30
20
90
80
70
o
Tc = 75 C
60
50
o
Tc = 100 C
40
30
20
10
10
25
0
1k
50
75
100
125
150
175
o
Collector-EmitterCase Temperature, TC [ C]
Figure 21. Forward Characteristics
10k
100k
Switching Frequency, f [Hz]
1M
Figure 22. Reverse Current
100
1000
o
Reverse Current, ICES [uA]
Forward Current, IF [A]
TC = 150 C
o
TC = 175 C
10
o
TC = 25 C
100
10
o
TC = 75 C
1
0.1
o
TC = 25 C
0.01
o
TC = 25 C
o
TC = 175 C
1
0.001
0
0.5
1.0
1.5
2.0
Forward Voltage, VF [V]
2.5
0
Figure 23. Stored Charge
200
300
400
Reverse Voltage,VR [V]
500
600
Figure 24. Reverse Recovery Time
2750
400
o
o
2500
TC = 25 C
Reverse Recovery Time, trr [ns]
Stored Recovery Charge, Qrr [nC]
100
o
TC = 175 C
2250
2000
1750
1500
1250
1000
di/dt = 200A/μs
750
di/dt = 100A/μs
500
250
TC = 25 C
350
o
TC = 175 C
300
250
200
di/dt = 100A/μs
150
di/dt = 200A/μs
100
50
0
0
0
5
10
FGH40N60SMDF Rev. B1
15 20 25 30 35
Forwad Current, IF [A]
40
0
45
7
5
10 15 20 25 30
Forward Current, IF [A]
35
40
45
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FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
FGH40N60SMDF 600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 25.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGH40N60SMDF Rev. B1
8
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FGH40N60SMDF 600V, 40A Field Stop IGBT
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
FGH40N60SMDF Rev. B1
9
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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intended for surgical implant into the body or (b) support or sustain life,
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expected to result in a significant injury of the user.
2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I53
FGH40N60SMDF Rev. B1
10
www.fairchildsemi.com
FGH40N60SMDF 600V, 40A Field Stop IGBT
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