FGH60N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • 100kHz Operation at 390V, 52A • • • • • • Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits • 200kHZ Operation at 390V, 31A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC • Low Gate Charge . . . . . . . . 140nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ • Low Conduction Loss Formerly Developmental Type TA49346. Package TO-247 Symbol E C C G G COLLECTOR (Back-Metal) E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES Parameter Collector to Emitter Breakdown Voltage Ratings 600 Units V IC25 Collector Current Continuous, TC = 25°C 75 A IC110 Collector Current Continuous, TC = 110°C 75 A Collector Current Pulsed (Note 1) 320 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 ICM 200A at 600V EAS Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V 700 PD Power Dissipation Total TC = 25°C 625 W 5 W/°C Operating Junction Temperature Range -55 to 150 °C Storage Junction Temperature Range -55 to 150 °C Power Dissipation Derating TC > 25°C TJ TSTG mJ CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2003 Fairchild Semiconductor Corporation FGH60N6S2 Rev. A2 FGH60N6S2 August 2003 Device Marking 60N6S2 Device FGH60N6S2 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30 Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V BVECS Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 20 - - V Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA TJ = 125°C - - 3 mA - - ±250 nA ICES IGES Gate to Emitter Leakage Current VGE = ± 20V On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V TJ = 25°C - 1.9 2.5 V TJ = 125°C - 1.65 2.2 V VGE = 15V - 140 175 nC VGE = 20V - 180 225 nC Dynamic Characteristics QG(ON) VGE(TH) VGEP Gate Charge IC = 40A, VCE = 300V Gate to Emitter Threshold Voltage IC = 250µA, VCE = VGE 3.5 4.3 5.0 V Gate to Emitter Plateau Voltage IC = 40A, VCE = 300V - 6.5 8.0 V Switching Characteristics SSOA Switching SOA TJ = 150°C, RG = 3Ω, VGE = 15V, L = 100µH, VCE = 600V 200 - - A td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 25°C, ICE = 40A, VCE = 390V, VGE = 15V, RG = 3Ω L = 100µH Test Circuit - Figure 20 - 18 - ns - 15 - ns - 70 - ns - 50 - ns - 400 - µJ - 490 - µJ - 310 450 µJ - 27 - ns trI td(OFF)I tfI Current Rise Time Current Turn-Off Delay Time Current Fall Time EON1 Turn-On Energy (Note 2) EON2 Turn-On Energy (Note 2) EOFF Turn-Off Energy (Note 3) td(ON)I Current Turn-On Delay Time trI td(OFF)I tfI Current Rise Time Current Turn-Off Delay Time Current Fall Time EON1 Turn-On Energy (Note 2) EON2 Turn-On Energy (Note 2) EOFF Turn-Off Energy (Note 3) IGBT and Diode at TJ = 125°C ICE = 40A, VCE = 390V, VGE = 15V, RG = 3Ω L = 100µH Test Circuit - Figure 20 - 32 - ns - 110 150 ns - 77 90 ns - 400 450 µJ - 750 850 µJ - 688 950 µJ - - 0.2 °C/W Thermal Characteristics RθJC Thermal Resistance Junction-Case TO-247 NOTE: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 20. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. ©2003 Fairchild Semiconductor Corporation FGH60N6S2 Rev. A2 FGH60N6S2 Package Marking and Ordering Information FGH60N6S2 Typical Performance Curves TJ = 25°C unless otherwise noted TJ = 150oC 150 125 100 PACKAGE LIMITED 75 50 25 225 ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 0 100 TC , CASE TEMPERATURE (oC) Figure 1. DC Collector Current vs Case Temperature 400 500 VGE = 15V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION 50 VGE = 10V (DUTY FACTOR = 50%) RØJC = 0.2oC/W, SEE NOTES tSC , SHORT CIRCUIT WITHSTAND TIME (µs) TC = 75oC 500 100 50 30 10 1100 VCE = 390V, RG = 3Ω, TJ = 125oC 14 1000 12 900 ISC 10 800 8 700 6 600 tSC 4 500 2 400 300 0 30 5 700 600 16 TJ = 125oC, RG = 3Ω, L = 100µH, V CE = 390V fMAX, OPERATING FREQUENCY (kHz) 300 Figure 2. Minimum Switching Safe Operating Area 1000 9 100 11 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 12 13 14 16 15 VGE , GATE TO EMITTER VOLTAGE (V) Figure 3. Operating Frequency vs Collector to Emitter Current Figure 4. Short Circuit Withstand Time 80 80 DUTY CYCLE < 0.5%, VGE = 10V PULSE DURATION = 250µs 70 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 175 60 50 TJ = 125oC 40 30 20 TJ = 150oC TJ = 25oC 10 0 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 70 60 50 40 TJ = 125oC 30 TJ = 25oC 20 TJ = 150oC 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage ©2003 Fairchild Semiconductor Corporation 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage FGH60N6S2 Rev. A2 FGH60N6S2 Typical Performance Curves TJ = 25°C unless otherwise noted 4.0 2.00 RG = 3Ω, L = 100µH, VCE = 390V 3.5 EOFF TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) RG = 3Ω, L = 100µH, VCE = 390V TJ = 25oC, TJ = 125oC, VGE = 10V 3.0 2.5 2.0 1.5 1.0 0.5 1.75 1.50 1.25 1.00 TJ = 125oC, VGE = 10V, VGE = 15V 0.75 0.50 0.25 TJ = 25oC, VGE = 10V, VGE = 15V TJ = 25oC, TJ = 125oC, VGE = 15V 0 0 10 20 30 40 50 60 0.0 80 70 0 Figure 7. Turn-On Energy Loss vs Collector to Emitter Current 30 40 50 60 70 80 90 RG = 3Ω, L = 100µH, VCE = 390V 30 RG = 3Ω, L = 100µH, VCE = 390V 80 28 70 26 trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 20 Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current 32 TJ = 25oC, TJ = 125oC, VGE = 10V 24 22 20 18 60 50 TJ = 25oC, TJ = 125oC, VGE = 10V 40 30 20 16 TJ = 25oC, TJ = 125oC, VGE = 15V 14 10 12 0 10 20 30 40 50 60 70 TJ = 25oC, TJ = 125oC, VGE = 15V 0 80 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 9. Turn-On Delay Time vs Collector to Emitter Current 120 10 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 10. Turn-On Rise Time vs Collector to Emitter Current 90 RG = 3Ω, L = 100µH, VCE = 390V RG = 3Ω, L = 100µH, VCE = 390V 100 70 VGE = 10V, VGE = 15V, TJ = 125oC 80 60 VGE = 10V, VGE = 15V, TJ = 25oC tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 80 TJ = 25oC, TJ = 125oC, VGE = 10V 60 50 40 TJ = 25oC, TJ = 125oC, VGE = 15V 40 30 20 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 11. Turn-Off Delay Time vs Collector to Emitter Current ©2003 Fairchild Semiconductor Corporation 20 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 12. Fall Time vs Collector to Emitter Current FGH60N6S2 Rev. A2 FGH60N6S2 Typical Performance Curves TJ = 25°C unless otherwise noted 16 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 175 IG(REF) = 1mA, RL = 7.5Ω VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 200 150 125 100 TJ = 25oC 75 50 TJ = 125oC 25 14 12 10 VCE = 600V VCE = 400V 8 6 VCE = 200V 4 2 TJ = -55oC 0 3.0 0 4.0 3.5 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 20 40 60 80 100 QG , GATE CHARGE (nC) VGE, GATE TO EMITTER VOLTAGE (V) 5 RG = 3Ω, L = 100µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 4 ICE = 80A 3 2 ICE = 40A 1 ICE = 20A 0 25 50 75 100 125 100 TJ = 125oC, L = 100µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10 ICE = 80A ICE = 40A 1 ICE = 20A 0.1 1 150 10 TC , CASE TEMPERATURE (oC) 1000 100 RG, GATE RESISTANCE (Ω) Figure 15. Total Switching Loss vs Case Temperature Figure 16. Total Switching Loss vs Gate Resistance 10 2.8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz CIES C, CAPACITANCE (nF) 140 Figure 14. Gate Charge ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) Figure 13. Transfer Characteristic 120 1 COES 0.1 CRES 0.01 0 20 40 60 80 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 100 Figure 17. Capacitance vs Collector to Emitter Voltage ©2003 Fairchild Semiconductor Corporation DUTY CYCLE < 0.5% PULSE DURATION = 250µs 2.6 2.4 2.2 ICE = 60A 2.0 ICE = 40A 1.8 ICE = 20A 1.6 6 7 8 9 10 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage FGH60N6S2 Rev. A2 FGH60N6S2 ZqJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves TJ = 25°C unless otherwise noted 100 0.50 0.20 t1 0.10 PD 10-1 t2 0.05 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZqJC X RqJC) + TC 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuit and Waveforms FGH60N6S2D DIODE TA49393 90% 10% VGE EON2 EOFF L = 100µH VCE RG = 3Ω 90% + FGH60N6S2 - ICE VDD = 390V 10% td(OFF)I tfI trI td(ON)I Figure 20. Inductive Switching Test Circuit ©2003 Fairchild Semiconductor Corporation Figure 21. Switching Test Waveforms FGH60N6S2 Rev. A2 Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2003 Fairchild Semiconductor Corporation Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/ 2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0) FGH60N6S2 Rev. A2 FGH60N6S2 Handling Precautions for IGBTs TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. 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As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5