Fairchild FGP10N60UNDF 600v, 10a short circuit rated igbt Datasheet

FGP10N60UNDF
600V, 10A
Short Circuit Rated IGBT
Applications
• Home appliance inverter-driven appplication
- Air Conditioner, Washing Machine, Refrigerator,
Dish Washer
Features
• Industrial Inverter - Sewing Machine, CNC
• Short circuit rated 10us
• High current capability
• High input impedance
General Description
• Fast switching
• RoHS compliant
Using advanced NPT IGBT Technology, Fairchild’s the NPT
IGBTs offer the optimum performance for low power inverterdriven applications where low-losses and short circuit ruggedness feature are essential.
C
G C E
G
TO-220
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
600
V
VGES
Gate to Emitter Voltage
± 20
V
25oC
Collector Current
@ TC =
Collector Current
@ TC = 100oC
ICM (1)
Pulsed Collector Current
@ TC = 25oC
30
A
IF
Diode Forward Current
@ TC = 25oC
10
A
Maximum Power Dissipation
@ TC = 25oC
139
W
Maximum Power Dissipation
@ TC = 100oC
56
W
IC
PD
20
A
10
A
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
Parameter
Thermal Resistance, Junction to Case
Typ.
Max.
-
0.9
Units
o
C/W
C/W
C/W
RθJC(Diode)
Thermal Resistance, Junction to Case
-
3.5
o
RθJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
-
62.5
o
Notes:
2: Mountde on 1” square PCB (FR4 or G-10 material)
©2012 Fairchild Semiconductor Corporation
FGP10N60UNDF Rev.A
1
www.fairchildsemi.com
FGP10N60UNDF 600V, 10A Short Circuit Rated
April 2012
Device Marking
Device
Package
Packaging
Type
Qty per Tube
Max Qty
per Box
FGP10N60UNDF
FGP10N60UNDF
TO220
Tube
50ea
-
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250µA
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±10
uA
IC = 10mA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
5.5
6.8
8.5
V
IC = 10A, VGE = 15V
-
2
2.45
V
IC = 10A, VGE = 15V,
TC = 125oC
-
2.3
-
V
-
517
pF
-
65
pF
-
20
pF
-
8.0
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
-
6.3
ns
td(off)
Turn-Off Delay Time
-
52.2
ns
tf
Fall Time
-
19.1
Eon
Turn-On Switching Loss
-
0.15
mJ
Eoff
Turn-Off Switching Loss
-
0.05
mJ
Ets
Total Switching Loss
-
0.2
mJ
td(on)
Turn-On Delay Time
-
8.1
ns
tr
Rise Time
-
7.3
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
Tsc
Short Circuit Withstand Time
FGP10N60UNDF Rev.A
VCC = 400V, IC = 10A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 10A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCC = 350V,
RG = 100Ω, VGE = 15V,
TC = 150oC
2
24.8
ns
-
55.1
ns
-
34.2
ns
-
0.22
mJ
-
0.08
mJ
-
0.3
mJ
10
-
-
µs
www.fairchildsemi.com
FGP10N60UNDF 600V, 10A Short Circuit Rated
Package Marking and Ordering Information
Symbol
Qg
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 10A,
VGE = 15V
Electrical Characteristics of the Diode
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Typ.
-
37
Max
Units
nC
-
5
nC
-
21
nC
Min.
Typ.
Max
-
1.8
2.2
-
1.7
TC = 25°C unless otherwise noted
Test Conditions
TC =
IF = 10A
25oC
TC = 125oC
IF = 10A, dIF/dt = 200A/µs
FGP10N60UNDF Rev.A
Min.
3
TC = 25oC
-
37.7
TC = 125oC
-
78.9
TC = 25oC
-
75
TC = 125oC
-
221
Units
V
ns
nC
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FGP10N60UNDF 600V, 10A Short Circuit Rated
Electrical Characteristics of the IGBT
FGP10N60UNDF 600V, 10A Short Circuit Rated
TTypical Performance Characteristics
Figure 1. Typical Output Characteristics
80
80
o
TC = 25 C
70
20V
17V
60
50
40
VGE = 12V
30
20
17V
15V
60
50
40
VGE = 12V
30
20
10
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
0
10
0
Figure 3. Typical Saturation Voltage
Characteristics
2
4
6
8
Collector-Emitter Voltage, VCE [V]
10
Figure 4. Transfer Characteristics
60
60
Common Emitter
VGE = 15V
50
o
TC = 125 C
40
Common Emitter
VCE = 20V
50
o
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
20V
70
10
30
20
10
o
TC = 25 C
o
TC = 125 C
40
30
20
10
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
0
6
0
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
3.5
3
6
9
12
Gate-Emitter Voltage,VGE [V]
20A
3.0
2.5
15
Figure 6. Saturation Voltage vs. VGE
4.0
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
15V
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
10A
2.0
IC = 5A
1.5
Common Emitter
o
TC = 25 C
16
12
8
10A
4
20A
IC = 5A
1.0
25
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGP10N60UNDF Rev.A
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
3000
Common Emitter
o
TC = 125 C
12
8
10A
Coes
Cres
100
Common Emitter
VGE = 0V, f = 1MHz
20A
4
IC = 5A
0
4
o
TC = 25 C
8
12
16
Gate-Emitter Voltage, VGE [V]
10
20
1
Figure 9. Gate charge Characteristics
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
100
15
200V
12
VCC = 100V
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
Cies
1000
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
20
Figure 8. Capacitance Characteristics
400V
9
6
3
10µs
10
100µs
1ms
1
10 ms
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
Common Emitter
o
TC = 25 C
0.01
0
0
5
10
15 20 25 30 35
Gate Charge, Qg [nC]
40
45
1
50
Figure 11. Turn-on Characteristics vs.
Gate Resistance
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
50
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
tr
10
Switching Time [ns]
Switching Time [ns]
o
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
TC = 25 C
o
TC = 125 C
td(off)
100
tf
o
TC = 25 C
o
TC = 125 C
10
1
0
10
FGP10N60UNDF Rev.A
20
30
40
Gate Resistance, RG [Ω ]
50
0
60
10
20
30
40
50
60
Gate Resistance, RG [Ω]
5
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FGP10N60UNDF 600V, 10A Short Circuit Rated
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
30
300
Common Emitter
VGE = 15V, RG = 10Ω
o
10
td(on)
Common Emitter
VGE = 15V, RG = 10Ω
tr
100
Switching Time [ns]
Switching Time [ns]
TC = 25 C
o
o
TC = 125 C
td(off)
tf
TC = 25 C
10
o
TC = 125 C
1
0
5
10
15
20
5
25
0
5
Collector Current, IC [A]
10
15
20
25
Collector Current, IC [A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs
Collector Current
1000
1000
Eon
100
Switching Loss [uJ]
Switching Loss [µJ]
Eon
Eoff
Common Emitter
VCC = 400V, VGE = 15V
IC = 10A
Eoff
100
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
10
o
TC = 25 C
o
TC = 125 C
o
TC = 125 C
5
0
10
20
30
40
Gate Resistance, RG [Ω]
50
10
60
0
5
10
15
20
25
Collector Current, IC [A]
Figure 17. Turn off Switching
SOA Characteristics
Figure 18. Forward Characteristics
30
Forward Current, IF [A]
Collector Current, IC [A]
50
10
10
o
TJ = 125 C
o
TJ = 75 C
o
TJ = 25 C
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
100
1
1000
0
Collector-Emitter Voltage, VCE [V]
FGP10N60UNDF Rev.A
6
1
2
Forward Voltage, VF [V]
3
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FGP10N60UNDF 600V, 10A Short Circuit Rated
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
100
0.3
o
TC = 25 C
o
Stored Recovery charge, Qrr [ns]
TJ = 125 C
Reverse Current , IR [µA]
10
o
1
TJ = 75 C
0.1
o
TJ = 25 C
0.01
1E-3
50
200
400
Reverse Voltage, VR [V]
o
TC = 125 C
200A/µs
0.2
di/dt = 100A/µs
0.1
200A/µs
di/dt = 100A/µs
0.0
600
0
2
4
6
8
10
12
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
100
Stored Recovery Charge, trr [nC]
o
TC = 25 C
di/dt = 100A/µs
o
TC = 125 C
80
200A/µs
60
di/dt = 100A/µs
40
200A/µs
20
0
0
2
4
6
8
10
12
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
Thermal Response [Zthjc]
1
0.5
0.5
0.2
0.2
0.1
0.1 0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
1E-5
0.005
0.00001
1E-4
PDM
PDM
t1
t2
Duty Factor,
t1 D = t1/t2
t2 x Zthjc + T
Peak
Tj = Pdm
Duty
Factor,
D = t1/t2
C
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
0.0001 Rectangular Pulse
0.001 Duration [sec] 0.01
1
10
0.1
Rectangular Pulse Duration [sec]
FGP10N60UNDF Rev.A
7
www.fairchildsemi.com
FGP10N60UNDF 600V, 10A Short Circuit Rated
Typical Performance Characteristics
FGP10N60UNDF 600V, 10A Short Circuit Rated
Mechanical Dimensions
TO-220
FGP10N60UNDF Rev.A
8
www.fairchildsemi.com
tm
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FGP10N60UNDF Rev.A
9
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FGP10N60UNDF 600V, 10A Short Circuit Rated
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